| title: | Electron transport and relaxation in low-dimensional conductors |
|---|---|
| reg no: | ETF5033 |
| project type: | Estonian Science Foundation research grant |
| subject: |
1.3. Physics |
| status: | completed |
| institution: | Institute of Physics at University of Tartu |
| head of project: | Andres Stolovitš |
| duration: | 01.01.2002 - 31.12.2005 |
| description: | Transport properties of quasi-one-dimensional compound of Nb4Te4Si will be studied. The single crystalline samples will be grown by the chemical transport method. The quantum interference contribution to the resistance, its dimensionality and the electron dephasing scattering lengths will be determined from the magnetoresistance and the temperature dependence of resistivity. For the computer control of an experimental setup and the data processing an original software will be created in the graphical programming environment "LabView". The development of field-effect transistor devices will begin from the optimization of the gate dielectric layer. By using different deposition techniques, gas environments and substrate temperatures the conditions for the maximal breakdown electric field of the Al2O3 gate will be found. The quality of the gate is important for maximizing the charge carrier density in the field-effect transistors devices. |
| project group | ||||
|---|---|---|---|---|
| no | name | institution | position | |
| 1. | Tea Avarmaa | TU FI | research associate | |
| 2. | Andres Stolovitš | Institurte of Physics, University of Tartu (TÜFI) | senior research associate | |
| 3. | Aleksei Šerman | TU FI | Senior research associate | |