| title: | Development and application of simulators for novel silicon carbide and diamond semiconductor device design |
|---|---|
| reg no: | ETF5180 |
| project type: | Estonian Science Foundation research grant |
| subject: |
2.12. Electrical Engineering |
| status: | completed |
| institution: | Tallinn Technical University |
| head of project: | Andres Udal |
| duration: | 01.01.2002 - 31.12.2003 |
| description: | General goals: 1. Development of reliable one- and two-dimensional device simulators to be applied as the basic tools for new perspective SiC and C device research, device design and student training 2. Application of simulators for solution of several scientific problems related to Si, SiC ja C material properties and device structures 3. Continuation of fruitful cooperation with Stockholmi and Vilnius research groups and creating a strong basis for further international contacts 4. Confirming high student training standard in the information technology and semiconductor device fields More detailed list of the scientific tasks: 1. Research and formulation of SiC and C parameter models (SiC anisotropy, thermoelectric coefficients, carrier mobilities and diffusivities etc.) to be applied in device simulators 2. Formulation of submodel set for SiC and C device simulators on an appropriate empirical level using available results by our research group and other authors 3. Generalization and development of 1D and 2D nonisothermal Si simulators (hierarchy of physical submodels, topology of semiconductor structures, algorithmic additions, input-output language and graphics) taking into account the specific features of SiC, C and other possible modern semiconductors 4. Application of the new simulators in cooperation with Swedish and Lithuanian partners to solve several scientific problems related to material parameters (ambipolar diffusivity, minority carrier mobilities, the Seebeck coefficient, excitonic concentration) and/or experiments (surge current, reverse recovery, TG-measurements) 5. Novel perspective SiC and C device simulations in comparison with traditional Si devices |
| project group | ||||
|---|---|---|---|---|
| no | name | institution | position | |
| 1. | Andres Udal | Tallinn Technical Univ., Electronics Institute (Faculty of Information Technology) | senior researcher | |
| 2. | Enn Velmre | TTU, Electronics Institute | Professor | |