[ sulge aken ]
| Elulookirjeldus (CV) | ||
| 1. | Eesnimi | Andres |
| 2. | Perekonnanimi | Udal |
| 3. | Töökoht | Tallinna Tehnikaülikool (TTÜ), infotehnoloogia teaduskond, elektroonikainstituudi rakenduselektroonika õppetool |
| 4. | Ametikoht | vanemteadur |
| 5. | Sünniaeg | 08.07.1955 (päev.kuu.aasta) |
| 6. | Haridus | Tallinna Polütehniline Instituut (praegu TTÜ), elektroonikainsener, 1978 |
| 7. | Teenistuskäik | – van.teadur, TTÜ elektroonikainstituut, märts 1999 - k.a. – teadur, TTÜ elektroonikainstituut, aug.1995 - veebr.1999 – doktorant, TTÜ elektroonikainstituut, aug.1994 - veebr.1999 – külalisteadur, Uppsala Ülikool, sept.1994 - mai 1995 – teaduslähetus, Darmstadti Tehnikaülikool, juuli-aug. 1994 – lektor, TTÜ elektroonikainstituut, aug.1992 - aug.1994 – van.õp., TTÜ Elektroonika kateeder, sept.1990 - aug.1992 – külalisteadur, USA-s firmas Silvaco Int., 1990-1992 (vaheaegadega, kokku 9 kuud) – teadur, TPI Elektroonika kateeder, 1983 - 1990 – aspirant, TPI, 1980 - 1982 – lepinguliste tööde ins., TPI Elektroonika kat., 1978-1979 |
| 8. | Teaduskraad | - Tehnikateaduste doktor - Tehnikamagister |
| 9. | Teaduskraadi välja andnud asutus, aasta |
TTÜ, 1999 TTÜ, 1992 |
| 10. | Tunnustused | – Koos prof. E.Velmre'ga teostatud ränikarbiidialased uuringud esitatud TTÜ poolt 2000.a. Eesti Vabariigi teaduspreemiate konkursile - End. NSVL üliõpilaste teadustööde üleliidulise konkursi aukiri, 1979 |
| 11. | Teadusorganisatsiooniline ja –administratiivne tegevus |
– Rahvusvahelise Elektri- ja Elektroonikainseneride ühingu (IEEE) liige, 1994 - k.a. – Eesti Teadlaste Liidu liige, 2003 - k.a. (2005 - volikogu liige) – TTÜ AÜ juhatuse liige, 2003 - k.a. - ETF projekti nr. 5180 grandihoidja, 2002 - 2003 |
| 12. | Juhendamisel kaitstud väitekirjad |
Irina Satšivkin (Verbitski), MSc, 2005, juh. Andres Udal. GaN ja GaAs pooljuhtstruktuuride numbriline modelleerimine arvestades rekombinatsioonkiirguse tagasineeldumise efekti. TTÜ |
| 13. | Teadustöö põhisuunad | – pooljuhtmaterjalide ja -seadiste teooria ja modelleerimine – pooljuhtseadiste simulaatorite väljatöötamine ja rakendamine – pooljuhtseadiste projekteerimine |
| 14. | Jooksvad grandid | - ETF projekt 5911 "Anisotroopsete elektriliste ja termoelektriliste mudelite ning seadisesimulaatorite väljatöötamine perpektiivsetele laia keelutsooniga pooljuhtidele SiC ja GaN" (2004-2006), grandihoidja |
| 15. | Teaduspublikatsioonid |
Velmre E., Udal A., & Klopov M. (2005). Modeling of Photon Recycling in GaN-Devices. Material Science Forum, 483-485, 1039-1042. Klopov M., Kuusk A., Velmre E., & Udal A. (2004). Ab Initio Study of GaN Properties Using VASP Software Package. Proc. of the 9th Baltic Electronics Conf. BEC2004 (Tallinn, Oct.3-6, 2004), pp. 55-58. Velmre E., & Udal A. (2004). Comparison of Photon Recycling Effect in GaAs and GaN Structures. Proc. Estonian Acad. Sci. Eng., 10(3), 157-172. Velmre E., Udal A., & Grivickas, V. (2004). High Phonon-Drag Thermoelectric Efficiency of SiC at Low Temperatures. Material Science Forum, 457-460, 693-696. Velmre E., Udal A., & Verbitski I. (2004). Study of Radiative Recombination Influence in GaN and GaAs Bipolar Transistor Structures. Proc. of the 9th Baltic Electronics Conf. BEC2004 (Tallinn, Oct.3-6, 2004), pp. 59-62. Bikbajevas V., Grivickas V., Stolzer M., Velmre E., Udal A., Grivickas P., Syvajarvi M., & Yakimova R. (2003). Impact of Phonon Drag Effect on Seebeck Coefficient in p-6H- SiC: Experiment and Simulation. Material Science Forum, 433-436, 407-410. Velmre E., & Udal A. (2003). Modeling of Lattice Heat Conductivity and Thermopower in SiC Considering the Four-Phonon Scattering Processes. Material Science Forum, 433-436, 391-394. Kurel R., & Udal A. (2002). Two-Dimensional Nonisothermal Analysis of the Current Crowding Eeffect at Nonuniform SiC Schottky Contacts Using Device Simulator DYNAMIT-2DT. Proc. of the 8th Baltic Electronics Conf. BEC2002 (Tallinn, Oct.6-9, 2002), pp. 51-54. Grivickas V., Stolzer M., Velmre E., Udal A., Grivickas P., Syvajarvi M., Yakimova R., & Bikbajevas V. (2001). Thermopower Measurements in 4H-SiC and Theoretical Calculations Considering the Phonon Drag Effect. Material Science Forum, 353-356, 491-494. Udal A., & Velmre E. (2000). Measurement of Charge Carrier Lifetime Temperature-Dependence in 4H-SiC Power Diodes. Material Science Forum, 338-342, 781-784. Velmre E., & Udal A. (2000). A Theoretical Study of Electron Drift Mobility Anisotropy in n-Type 4H- and 6H-SiC. Material Science Forum, 338-342, 725-728. Velmre E., & Udal A. (2000). Modelling of Charge Carrier Nonisothermal Transport in Silicon and Silicon Carbide. Proc. Estonian Acad. Sci. Eng., 6(2), 144-154. Velmre E., & Udal A. (1999). Corrected Accounting of Electron-Hole Scattering in Cross-Term Current Equations for Si and SiC. Physica Scripta, T79, 193-197. Udal A., & Velmre E. (1997). SiC-Diodes Forward Surge Current Failure Mechanisms: Experiment and Simulation. Microelectronics and Reliability, 37(10-11), 1671-1674. Velmre E., Udal A., Masszi F., & Nordlander E. (1995). Investigation of Silicon Carbide Diode Structures via Numerical Simulations Including Anisotropic Effects. Simulation of semiconductor devices and processes, Vol.6, Ed. by H.Ryssel and P.Pichler, Springer-Verlag, (Proc. of SISDEP'95, Erlangen, Germany, Sept. 6-8, 1995), pp.340-343. Velmre E., Udal A., Kocsis T., & Masszi F. (1994). A Theoretically Accurate Mobility Model for Semiconductor Drift-diffusion Simulation. Physica Scripta, T54, 263-267. Udal A. (1983). Numerical Transient Analysis of a Bulk-Barrier Diode. Solid-State Electronics, 26(11), 1130-1131. Velmre E., Freidin B., & Udal A. (1981). Numerical Analysis of the On-State of Diode Structures Based on Direct-Gap Semiconductors. Physica Scripta, 24(2), 468-471. |
viimati muudetud: 28.09.2005
| Curriculum Vitae (CV) | ||
| 1. | First Name | Andres |
| 2. | Surname | Udal |
| 3. | Institution | Tallinn University of Technology, Faculty of Information Technology, Electronics Department, Chair of Applied Electronics |
| 4. | Position | senior researcher |
| 5. | Date of birth | 08.07.1955 (day.month.year) |
| 6. | Education | Tallinn Polytechnical Institute TPI (later 1990-2003 TTU, currently TUT), electronics engineer, 1978 |
| 7. | Research and professional experience |
– senior researcher, TTU(TUT) Electronics Dept., Mar.1999 - present time – researcher, TTU Electronics Inst., Aug.1995 - Feb.1999 – Ph.D. student, TTU Electronics Dept., Aug.1994 - Feb.1999 – visiting researcher, Uppsala Univ., Sep.1994 - May 1995 – visiting researcher, Darmstadt TU, July-Aug. 1994 – lecturer, TTU Electronics Inst., Aug.1992 - Aug.1994 – sen.teacher. TTU Electronics chair, Sep.1990 - Aug.1992 – visitor in Silvaco Int. (USA), 1990 - 1992 (3 visits, total 9 months) – researcher, TPI Electronics chair, 1983 - 1990 – postgraduate student, TPI Electronics chair, 1980-1982 – research engineer, TPI Electronics chair, 1978-1979 |
| 8. | Academic degree | – Doctor of Philosophy in Engineering – Master of Technical Sciences |
| 9. | Dates and sites of earning the degrees |
TTU, 1999 TTU, 1992 |
| 10. | Honours/awards | - The silicon carbide research results obtained together with prof. E.Velmre nominated by TTU to Estonian Republic scientific works contests, 2000 - Former USSR student scientific research contest diploma, 1979 |
| 11. | Research-administrative experience |
– IEEE member, 1994 - present time – Estonian Union of Scientists member, 2003 - present time (2005 - member of council) – TTU Trade Union Board member, 2003 - present time - Principal investigator of Estonian Science Foundation project 5180, 2002 - 2003 |
| 12. | Supervised dissertations |
Irina Satšivkin (Verbitski), MSc, 2005, superv. Andres Udal. GaN ja GaAs pooljuhtstruktuuride numbriline modelleerimine arvestades rekombinatsioonkiirguse tagasineeldumise efekti. TTÜ |
| 13. | Current research program | – theory of semiconductor materials and devices – development and application of semiconductor device simulators – semiconductor device design |
| 14. | Current grant funding | - Estonian Science Foundation, Project 5911 "Development of anisotropic electrical and thermoelectric parameter models and device simulators for novel wide band gap semiconductors SiC and GaN" (2004-2006), principal investigator |
| 15. | List of most important publications |
Velmre E., Udal A., & Klopov M. (2005). Modeling of Photon Recycling in GaN-Devices. Material Science Forum, 483-485, 1039-1042. Klopov M., Kuusk A., Velmre E., & Udal A. (2004). Ab Initio Study of GaN Properties Using VASP Software Package. Proc. of the 9th Baltic Electronics Conf. BEC2004 (Tallinn, Oct.3-6, 2004), pp. 55-58. Velmre E., & Udal A. (2004). Comparison of Photon Recycling Effect in GaAs and GaN Structures. Proc. Estonian Acad. Sci. Eng., 10(3), 157-172. Velmre E., Udal A., & Grivickas, V. (2004). High Phonon-Drag Thermoelectric Efficiency of SiC at Low Temperatures. Material Science Forum, 457-460, 693-696. Velmre E., Udal A., & Verbitski I. (2004). Study of Radiative Recombination Influence in GaN and GaAs Bipolar Transistor Structures. Proc. of the 9th Baltic Electronics Conf. BEC2004 (Tallinn, Oct.3-6, 2004), pp. 59-62. Bikbajevas V., Grivickas V., Stolzer M., Velmre E., Udal A., Grivickas P., Syvajarvi M., & Yakimova R. (2003). Impact of Phonon Drag Effect on Seebeck Coefficient in p-6H- SiC: Experiment and Simulation. Material Science Forum, 433-436, 407-410. Velmre E., & Udal A. (2003). Modeling of Lattice Heat Conductivity and Thermopower in SiC Considering the Four-Phonon Scattering Processes. Material Science Forum, 433-436, 391-394. Kurel R., & Udal A. (2002). Two-Dimensional Nonisothermal Analysis of the Current Crowding Eeffect at Nonuniform SiC Schottky Contacts Using Device Simulator DYNAMIT-2DT. Proc. of the 8th Baltic Electronics Conf. BEC2002 (Tallinn, Oct.6-9, 2002), pp. 51-54. Grivickas V., Stolzer M., Velmre E., Udal A., Grivickas P., Syvajarvi M., Yakimova R., & Bikbajevas V. (2001). Thermopower Measurements in 4H-SiC and Theoretical Calculations Considering the Phonon Drag Effect. Material Science Forum, 353-356, 491-494. Udal A., & Velmre E. (2000). Measurement of Charge Carrier Lifetime Temperature-Dependence in 4H-SiC Power Diodes. Material Science Forum, 338-342, 781-784. Velmre E., & Udal A. (2000). A Theoretical Study of Electron Drift Mobility Anisotropy in n-Type 4H- and 6H-SiC. Material Science Forum, 338-342, 725-728. Velmre E., & Udal A. (2000). Modelling of Charge Carrier Nonisothermal Transport in Silicon and Silicon Carbide. Proc. Estonian Acad. Sci. Eng., 6(2), 144-154. Velmre E., & Udal A. (1999). Corrected Accounting of Electron-Hole Scattering in Cross-Term Current Equations for Si and SiC. Physica Scripta, T79, 193-197. Udal A., & Velmre E. (1997). SiC-Diodes Forward Surge Current Failure Mechanisms: Experiment and Simulation. Microelectronics and Reliability, 37(10-11), 1671-1674. Velmre E., Udal A., Masszi F., & Nordlander E. (1995). Investigation of Silicon Carbide Diode Structures via Numerical Simulations Including Anisotropic Effects. Simulation of semiconductor devices and processes, Vol.6, Ed. by H.Ryssel and P.Pichler, Springer-Verlag, (Proc. of SISDEP'95, Erlangen, Germany, Sept. 6-8, 1995), pp.340-343. Velmre E., Udal A., Kocsis T., & Masszi F. (1994). A Theoretically Accurate Mobility Model for Semiconductor Drift-diffusion Simulation. Physica Scripta, T54, 263-267. Udal A. (1983). Numerical Transient Analysis of a Bulk-Barrier Diode. Solid-State Electronics, 26(11), 1130-1131. Velmre E., Freidin B., & Udal A. (1981). Numerical Analysis of the On-State of Diode Structures Based on Direct-Gap Semiconductors. Physica Scripta, 24(2), 468-471. |
last updated: 28.09.2005
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