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Elulookirjeldus (CV) | ||
1. | Eesnimi | Teet |
2. | Perekonnanimi | Uustare |
3. | Töökoht | Tartu Ülikool Füüsika Instituut |
4. | Ametikoht | vanemteadur |
5. | Sünniaeg | 16.04.1952 (päev.kuu.aasta) |
6. | Haridus | Tallinna 16. Keskkool, 1970 Tartu Riiklik Ülikool, 1975 |
7. | Teenistuskäik | 1970-1975 õpingud Tartu Riikliku Ülikooli füüsikaosakonnas 1975 kuni praeguseni teenistus ja õpingud Tartu Riiklikus Ülikoolis (aastast 1991 Tartu Ülikoolis): 1975-1976 Elektroluminestsentsi ja pooljuhtide labori nooremteadur 1976-1978 Eksperimentaalfüüsika kateedri stažöör-uurija 1976-1978 Elektroluminestsentsi ja pooljuhtide labori nooremteadur 1979-1982 Eksperimentaalfüüsika kateedri aspirant 1982-1985 Elektroluminestsentsi ja pooljuhtide labori vanemteadur 1985-1991 Elektroluminestsentsi ja pooljuhtide labori sektorijuhataja 1991-1996 Eksperimentaalfüüsika ja tehnoloogia instituudi vanemteadur 1996-1999 Materjaliteaduse instituudi vanemteadur 1991-2001 Tehnoloogiakeskuse vanemteadur 2002 kuni praeguseni Füüsika instituudi vanemteadur |
8. | Teaduskraad | füüsika-matemaatikakandidaat (tahkisefüüsika) |
9. | Teaduskraadi välja andnud asutus, aasta |
Tartu Riiklik Ülikool, 1984 |
10. | Tunnustused | |
11. | Teadusorganisatsiooniline ja –administratiivne tegevus |
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12. | Juhendamisel kaitstud väitekirjad |
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13. | Teadustöö põhisuunad | Õhukeste kihtide struktuuranalüüs elektrondifraktsiooniga, Auger' spektroskoopia |
14. | Jooksvad grandid | ETF grant 5861 "Pinna- ja siirdekihtide mõju laia keelutsooniga oksiidkilede aatomkihtsadestamisele ja omadustele", 2004-2007 |
15. | Teaduspublikatsioonid |
K.Kukli, J.Aarik, T.Uustare, J.Lu, M.Ritala, A.Aidla, L.Pung, A.Hårsta, M.Leskelä, A.Kikas, V.Sammmelselg, Engineering structure and properties of hafnium oxide films by atomic layer deposition temperature, Thin Solid Films, 479 (2005) 1-11. T.Jantson, T.Avarmaa, H.Mändar, T.Uustare, R.Jaaniso, Nanocrystalline Cr2O3-TiO2 thin films by pulsed laser deposition, Sens. Actuators B, 109 (2005) 24-31. J.Aarik, A.Aidla, A.Kikas, T.Käämbre, R.Rammula, P.Ritslaid, T.Uustare, V.Sammelselg, Effects of precursors on nucleation in atomic layer deposition of HfO2, Appl.Surf. Sci., 230 (2004) 292-300. K.Kukli, J.Aarik, M.Ritala, T.Uustare, T. Sajavaara, J.Lu, J. Sundqvist, A.Aidla, L.Pung, A.Hårsta, M.Leskelä, Effect of selected atomic layer deposition parameters on the structure and dielectric properties of hafnium oxide films, J. Appl. Phys.,96 (2004), 5298-5307. A.Rosental, A.Tarre, A.Gerst, J.Sundqvist, A.Hårsta, A.Aidla, J.Aarik, V.Sammelselg, T.Uustare, Gas sensing properties of epitaxial SnO2 thin films prepared by atomic layer deposition, Sens. Actuators B, 93 (2003) 552-555. A.Tarre, A.Rosental, J.Sundqvist, A.Hårsta, T.Uustare, V.Sammelselg, Nanoepitaxy of SnO2 on -Al2O3 (012), Surf. Sci., 532-535 (2003) 514-518. J.Aarik, A.Aidla, H.Mändar, T.Uustare, M.Schuisky, A.Hårsta, Atomic layer growth of epitaxial TiO2 thin films from TiCl4 and H2O on -Al2O3 substrates, J. Cryst. Growth, 242 (2002) 189-198. J.Aarik, A.Aidla, H.Mändar, T.Uustare, V.Sammelselg, Growth kinetics and structure formation of ZrO2 thin films in chloride-based atomic layer deposition process, Thin Solid Films, 408 (2002) 197-203. J.Aarik, A.Aidla, T.Uustare, K.Kukli, V.Sammelselg, M.Ritala, M.Leskelä, Atomic layer deposition of TiO2 thin films from TiI4 and H2O, Appl.Surf. Sci., 193 (2002) 277-286. K.Kukli, M.Ritala, J.Aarik, T.Uustare, M.Leskelä, Influence of growth temperature on properties of zirconium dioxide films grown by atomic layer deposition, J. Appl. Phys., 92 (2002) 1833-1840. K.Kukli, M.Ritala, T.Uustare, J.Aarik, K.Forsgren, T.Sajavaara, M.Leskelä, A.Hårsta, Influence of thickness and growth temperature on the properties of zirconium oxide films grown by atomic layer deposition on silicon, Thin Solid Films, 410 (2002) 53-60. A.Rosental, A.Tarre, A.Gerst, T.Uustare, V.Sammelselg, Atomic-layer chemical vapor deposition of SnO2 for gas-sensing applications, Sensors and Actuators B, 77 (2001)297-300. A.Tarre, A.Rosental, V.Sammelselg, T.Uustare, Comparative study of low-temperature chloride atomic-layer chemical vapor deposition of TiO2 and SnO2, Appl.Surf. Sci.,175-176 (2001) 111-116. J.Aarik, A.Aidla, H.Mändar and T.Uustare, Atomic layer deposition of titanium dioxide from TiCl4 and H2O: investigation of growth mechanism, Appl. Surf. Sci., 172, (2001) 148-158. J.Aarik, A.Aidla, H.Mändar, T.Uustare, K.Kukli, M.Schuisky , Phase transformations in hafnium dioxide thin films grown by atomic layer deposition at high temperatures, Appl. Surf. Sci., 173 (2001) 15-21. J.Aarik, J.Karlis, H.Mändar, T.Uustare, V.Sammelselg, Influence of structure development on atomic layer deposition of TiO2 thin films, Appl.Surf. Sci., 181 (2001) 339-348. K.Kukli, J.Aarik, A.Aidla, K.Forsgren, J.Sundqvist, A.Hårsta, T.Uustare, H.Mändar and A.-A.Kiisler, Atomic layer deposition of tantalum oxide thin films from iodide precursor, Chem. Mater., 13 (2001) 122-128. K.Kukli, K.Forsgren, J.Aarik, T.Uustare, A.Aidla, A.Niskanen, M.Ritala, M.Leskelä, A.Hårsta, Atomic layer deposition of zirconium oxide from zirconium tetraiodide, water and hydrogen peroxide, J. Cryst. Growth, 231 (2001) 262-272. |
viimati muudetud: 05.08.2005
Curriculum Vitae (CV) | ||
1. | First Name | Teet |
2. | Surname | Uustare |
3. | Institution | Institute of Physics University of Tartu |
4. | Position | senior research associate |
5. | Date of birth | 16.04.1952 (day.month.year) |
6. | Education | Tallinn 16-th Secondary School, 1970 (füüsik) State University of Tartu, 1975 (physicist) |
7. | Research and professional experience |
1970-1975 Student of the Physics Department of State University of Tartu since 1975 up to present service and studies at State University of Tartu (since 1991 University of Tartu) as: 1975-1976 Junior Research Associate 1976-1978 Postgraduate Student 1978-1979 Junior Research Associate 1979-1982 Ph.D. Student 1982-1985 Senior Research Associate 1985-1991 Head of Group since 1991 up to present Senior Research Associate |
8. | Academic degree | Cand. Sci. (Ph.D.) (solid state physics) |
9. | Dates and sites of earning the degrees |
State University of Tartu, 1984 |
10. | Honours/awards | |
11. | Research-administrative experience |
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12. | Supervised dissertations | |
13. | Current research program | Structure analysis of thin films by electron diffraction, Auger' spectroscopy |
14. | Current grant funding | Grant of ESF no. 5861 "Influece of surface and interfacial layers on atomic layer deposition and properties of thin films", duration 2004-2007 |
15. | List of most important publications |
K.Kukli, J.Aarik, T.Uustare, J.Lu, M.Ritala, A.Aidla, L.Pung, A.Hårsta, M.Leskelä, A.Kikas, V.Sammmelselg, Engineering structure and properties of hafnium oxide films by atomic layer deposition temperature, Thin Solid Films, 479 (2005) 1-11. T.Jantson, T.Avarmaa, H.Mändar, T.Uustare, R.Jaaniso, Nanocrystalline Cr2O3-TiO2 thin films by pulsed laser deposition, Sens. Actuators B, 109 (2005) 24-31. J.Aarik, A.Aidla, A.Kikas, T.Käämbre, R.Rammula, P.Ritslaid, T.Uustare, V.Sammelselg, Effects of precursors on nucleation in atomic layer deposition of HfO2, Appl.Surf. Sci., 230 (2004) 292-300. K.Kukli, J.Aarik, M.Ritala, T.Uustare, T. Sajavaara, J.Lu, J. Sundqvist, A.Aidla, L.Pung, A.Hårsta, M.Leskelä, Effect of selected atomic layer deposition parameters on the structure and dielectric properties of hafnium oxide films, J. Appl. Phys.,96 (2004), 5298-5307. A.Rosental, A.Tarre, A.Gerst, J.Sundqvist, A.Hårsta, A.Aidla, J.Aarik, V.Sammelselg, T.Uustare, Gas sensing properties of epitaxial SnO2 thin films prepared by atomic layer deposition, Sens. Actuators B, 93 (2003) 552-555. A.Tarre, A.Rosental, J.Sundqvist, A.Hårsta, T.Uustare, V.Sammelselg, Nanoepitaxy of SnO2 on -Al2O3 (012), Surf. Sci., 532-535 (2003) 514-518. J.Aarik, A.Aidla, H.Mändar, T.Uustare, M.Schuisky, A.Hårsta, Atomic layer growth of epitaxial TiO2 thin films from TiCl4 and H2O on -Al2O3 substrates, J. Cryst. Growth, 242 (2002) 189-198. J.Aarik, A.Aidla, H.Mändar, T.Uustare, V.Sammelselg, Growth kinetics and structure formation of ZrO2 thin films in chloride-based atomic layer deposition process, Thin Solid Films, 408 (2002) 197-203. J.Aarik, A.Aidla, T.Uustare, K.Kukli, V.Sammelselg, M.Ritala, M.Leskelä, Atomic layer deposition of TiO2 thin films from TiI4 and H2O, Appl.Surf. Sci., 193 (2002) 277-286. K.Kukli, M.Ritala, J.Aarik, T.Uustare, M.Leskelä, Influence of growth temperature on properties of zirconium dioxide films grown by atomic layer deposition, J. Appl. Phys., 92 (2002) 1833-1840. K.Kukli, M.Ritala, T.Uustare, J.Aarik, K.Forsgren, T.Sajavaara, M.Leskelä, A.Hårsta, Influence of thickness and growth temperature on the properties of zirconium oxide films grown by atomic layer deposition on silicon, Thin Solid Films, 410 (2002) 53-60. A.Rosental, A.Tarre, A.Gerst, T.Uustare, V.Sammelselg, Atomic-layer chemical vapor deposition of SnO2 for gas-sensing applications, Sensors and Actuators B, 77 (2001)297-300. A.Tarre, A.Rosental, V.Sammelselg, T.Uustare, Comparative study of low-temperature chloride atomic-layer chemical vapor deposition of TiO2 and SnO2, Appl.Surf. Sci.,175-176 (2001) 111-116. J.Aarik, A.Aidla, H.Mändar and T.Uustare, Atomic layer deposition of titanium dioxide from TiCl4 and H2O: investigation of growth mechanism, Appl. Surf. Sci., 172, (2001) 148-158. J.Aarik, A.Aidla, H.Mändar, T.Uustare, K.Kukli, M.Schuisky , Phase transformations in hafnium dioxide thin films grown by atomic layer deposition at high temperatures, Appl. Surf. Sci., 173 (2001) 15-21. J.Aarik, J.Karlis, H.Mändar, T.Uustare, V.Sammelselg, Influence of structure development on atomic layer deposition of TiO2 thin films, Appl.Surf. Sci., 181 (2001) 339-348. K.Kukli, J.Aarik, A.Aidla, K.Forsgren, J.Sundqvist, A.Hårsta, T.Uustare, H.Mändar and A.-A.Kiisler, Atomic layer deposition of tantalum oxide thin films from iodide precursor, Chem. Mater., 13 (2001) 122-128. K.Kukli, K.Forsgren, J.Aarik, T.Uustare, A.Aidla, A.Niskanen, M.Ritala, M.Leskelä, A.Hårsta, Atomic layer deposition of zirconium oxide from zirconium tetraiodide, water and hydrogen peroxide, J. Cryst. Growth, 231 (2001) 262-272. |
last updated: 05.08.2005
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