ERIS - Eesti teadus- ja arendustegevuse infosüsteem

Elulookirjeldus (CV)
1.	Eesnimi	Toomas
2.	Perekonnanimi	Rang
3.	Töökoht	Tallinna Tehnikaülikooli Elektroonikainstituut
4.	Ametikoht	Professor, instituudi direktor
5.	Sünniaeg	10.11.1951 (päev.kuu.aasta)
6.	Haridus	Tallinna Polütehniline Instituut 1970-1975; Elektroonikainsener Budapesti Tehnikaülikool 1977-1981 PhD ōpingud Goethe Instituut Prienis 1984; Saksa keele täiendkursuse läbimine Eesti Diplomaatide Kool 1990-1991; Diplomaatia ja Rahvusvahelised Suhted; Tallinna Tehnikaülikooli Täienduskoolituse Keskus 1999; Akadeemiline juhendamine; MLP Baltic/Carlson Learning Company 2000; DiSC juhtimiskursused.
7.	Teenistuskäik	1970-1975 Tallinna Polütehniline Instituut; üliôpilane Tööstuselektroonika erialal. 1975-1977 Tallinna Polütehniline Instituut; vaneminsener Elektroonikainstituudis 1977-1981 Aspirant BTU-s 1981-1984 Tallinna Polütehniline Instituut; vaneôpetaja elektroonikainstituudis. 1984-1985 Uni des Saarlandes (Saksamaa); Külalisuurija 1985-1986 Tallinna Polütehniline Instituut; Dotsent elektroonika instituudis; Automaatika teaduskonna dekaan 1986-1996 Tallinna Tehnikaülikool; Dotsent elektroonikainstituudis 1996 kuni k.a. Tallinna Tehnikaülikool; Professor, Elektroonikainstituudi direktor
8.	Teaduskraad	PhD
9.	Teaduskraadi välja andnud asutus, aasta	Ungari Teaduste Akadeemia, 1981
10.	Tunnustused	2000, Tallinna Tehnikaülikooli kuldmärk
11.	Teadusorganisatsiooniline ja –administratiivne tegevus	USA Elektri ja Elektroonikainseneride Ühingu (IEEE) liige. Eesti Elektroonikainseneride Ühenduse liige. Konverentside Micromat’97, Micromat2000, Microsim’97, Therminic’96, Electrosoft 1999, Electrosoft 2001, BEC1996-2004 teaduspublikatsioonide expert. Inglise Inseneri- ja Füüsikateaduslike Uuringute Nôukogu (British Engineering and Physical Sciences Research Council) välisekspert. EL Leonardo da Vinci programmi ekspert. Konverentside MicroMat (Saksa), Electrosoft (Inglise) and BEC (Eesti) rahvusvaheliste programmikomiteede liige Raamatuseeria "Electrical and Electronics Engineering" (WIT Press, Inglismaa) ekspertnôukogu liige
12.	Juhendamisel kaitstud väitekirjad	Mirjam Kuuse, MSc, 2005, juh. Toomas Rang. Temperatuuri mōju integraallülituste käitumisele. Tallinn Raido Kurel, DSc, 2005, juh. Toomas Rang. Investigation of Electrical Characteristics of SiC Based Complementary JBS Structures. Tallinn Rainer Taniloo, DSc, 2005, juh. Toomas Rang. ökonoomsete negatiivse diferentsiaaltakistusega astmete ja elementide disainimine ja optimeerimine. Tallinn Oleg Korolkov, DSc, 2004, juh. Toomas Rang. Formation of Diffusion Welded Al Contacts to Semiconductor Silicon Carbide. Tallinn Andrei Pokatilov, MSc, 2003, juh. Toomas Rang. Elektriliste suuruste mõõtmiste automatiseerimine. Tallinn Argo Kasemaa, MSc, 2003, juh. Toomas Rang. Tallinna Tehnikaülikooli Kuressaare Kolledži elektroonika õppekava. Tallinn Svetlana Kolessova, MSc, 2002, juh. Toomas Rang. Sidesüsteemide kiire prototüüpimise sigma-delta emulaatori ja mitmeastmelise inegreeriva kammfiltri disain. Tallinn Raido Kurel, MSc, 2000, juh. Toomas Rang. Current Crowding Effect in SiC Schottky Structures. Tallinn Ants Koel, MSc, 1998, juh. Toomas Rang. Numerical Modelling of Semiconductor Devices. Tallinn Oleg Korolkov, MSc, 1998, juh. Toomas Rang. Investigation of Silicon Power Semiconductor Devices manufactured Using Diffusion Welding Technology. Tallinn
13.	Teadustöö põhisuunad	Laia keelutsooniga materjalidest pooljuhtstruktuuride kontaktide valmistamistehnoloogiate uurimine ja kontaktialade füüsikalis-matemaatiline modelleerimine
14.	Jooksvad grandid	Sihtfinantseerimine 01411754s01 "Seire ja analüüsihôivesüsteemid – elektroonsedkomponendid, tehnoloogiad, lülitused, mudelid,algoritmid, süsteemi-integratsiooni meetodid" G5901 ETF "Schottky siirded laia keelutsooniga pooljuhtides: Laengukandjate transport ja nende mudelite parameetreid mōjutavad elektrofüüsikalised nähtused" "GaAs pingekordistite väljatöötamine" (Leping 038L)
15.	Teaduspublikatsioonid	Korolkov, O., Rang, T., Syrkin, A., and Dmitriev, V: Diffusion Welding Techniques for Power SiC Schottky Packaging. In “Silicon Carbide and Related materials”, Trans Tech Publications Ltd, Switzerland, 2006, (4 pages in press). Pikkov, M., Rang, T., Pokatilov, A.:. SiC Schottky Diode for Use in Power Convertors. Proc. of 12th Int. Power Electronics and Motion Control Conference EPE-PEMC 2006, Portoroz, Slovenia, Aug.30-Sept.1, 2006. (hindamisel) Korolkov, O., Rang, T., Syrkin, A., and Dmitriev, V: Diffusion Welding Techniques for Power SiC Schottky Packaging. Final Program of the 12th International Conference on Silicon Carbide and Related Materials ICSCRM 2005, September 18-23, 2005 Pittsburgh , PA, USA, 71. Rang, T., Kurel, R., Higelin, G., Poirier, L.: Current Crowding Phenomenon in JBS structures. In “Computer Methods and Experimental Measurements for Surface Effects and Contact Mechanics VII”, Eds. J. T. M. de Hosson, C. A. Brebbia, S-I. Nishida, WIT Press, Southampton, 2005, 387-396. Korolkov, O., Ljutov, J., Kuznetsova, N., Ruut, J., Rang, T.: Analysis of the Schottky parameters for diffusion-welded aluminium contacts to p-and n-type SiC. Proceedings BEC2004, Tallinn, October 3-6, 2004, 51-53. Korolkov, O., Ruut, J., Kuznetsova, N, Rang, T: The Basic Parameters of Diffusion Welded Al Schottky Contacts to p- and n-SiC. In “Silicon Carbide and Related Materials 2003” Eds. R. Madar, J. Camassel, E. Blanquet, Trans Tech Publications Ltd, Switzerland, 2004, 857-860. Proceedings of Baltic Electronics Conference (BEC2004), 349 pgs. Rang, T, Higelin, G., Kurel, R.: Numerical study of current crowding phenomenon in complementary 4H-SiC JBS rectifiers. In “Silicon Carbide and Related Materials 2003”, Eds. R. Madar, J. Camassel, E. Blanquet, Trans Tech Publications Ltd, Switzerland, 2004, 1045-1048. Rang, T., Korolkov, O., Ljutov, J.: Interpretation of some physical parameters for SiC Schottky interfaces manufactured by diffusion welding technology. Proc. Estonian Acad. Sci. Eng., v. 103, 2004, 179-184. Rang, T., Korolkov, O., Pikkov, M: Schottky Diode. Patent EE 99 00205 U1, (12.07.1999). (uuendatud 2004). Rang, T., Kurel, R.: Comparison of Dynamic Behaviour of Complementary 6H- and 4H-SiC Schottky Structures using Numerical Simulation. Proc. Estonian Acad. Sci. Eng., v. 10/3, 2004, 173-178. Rang, T., Kurel. R., Higelin, G.: Numerical Study of turn-off Phenomenon in Compelementary 4H-SiC JBS Rectifiers. Proceedings BEC2004, Tallinn, October 3-6, 2004, 47-50. Rang, T., Vojtovich, V., Kuznetsova, N.: High Voltage GaAs diode Stacks: the choice of epistructures for assembling. Proc. of Design, Test, Integration and Packaging of MEMS/MOEMS – DTIP2004, 12-14 May 2004, Montreux, Switzerland, 199-202. Vojtovich, V., Kuznetsova, N., Rang, T., K., Pikkov, M.: Comparison of GaAs Based High Voltage Stacks. 11th International Power Electronics and Motion Control Conference, 2-4 Sept. 2004, Riga, Latvia, CD-ROM, ISBN 9984-010-3, 4 pgs. Korolkov, O, Rang, T., Kurel, R.: Investigation of the Combined Stress and Strain Situation in Diffusion Welded Rectifying Elements. In “Surfacse Treatment VI”, Edited by C. A. Brebbia, J. T. M de Hosson, S-I. Nishida, WIT Press, 2003, 307-316. Korolkov, O., Rang, T., Syrkin, A., Dmitriev, V.: Diffusion Welded Al Contacts to p-type SiC. In “Silicon Carbide and Related Materials 2002 (ECSCRM2002)”, Eds. P. Bergman and E. Janzén, Trans Tech Publications Ltd, Switzerland, 2003, 697-700. Korolkov, O, Rang, T., Kuznetsova, J., Ruut, J: Preliminary Investigation of Diffusion Welded Contacts to p-type 6H-SiC. Proc. of 8th Baltic Electronics Conference. Oct 6-9, Tallinn, Estonia, 2002, 55-56. Korolkov, O., Rang, T.: Large area 4H-SiC Schottky structure with defects in epitaxial layer. In ”Silicon Carbide and Related materials 2001. Part 2”. Editors: S. Yoshida, S. Nishine, H. Harima, T. Kimoto, Trans Tech Publications Ltd, Switzerland, 2002, 941-944. Proceedings of Baltic Electronics Conference (BEC2002), 409 pgs. Korolkov, O., Rang,T.: Comparative characteristics of 6H- and 4H-SiC surfaces in diffusion welding. Proc. Estonian Acad. Sci. Eng., v. 7, No. 4, 2001, 347-353. Korolkov, O., Rang, T.: Formation of Large Area Al contacts on 6H- and 4H-SiC Substrates. In “Silicon Carbide and Related Materials ECSCRM2000). Editors: G. Pensl, D. Stephani, M. Hundhausen, Trans Tech Publications Ltd, Switzerland, 2001, 603-606. Korolkov, O., Vojtovich, V., Rang, T.: Subcontact layers in LPE structures for forming the ohmic contacts on GaAs semiconductor substrates. Abstract Book of 13th American Conference on Crystal Growth and Epitaxy. August 12-16, 2001, Burlington, Vermont, USA, 133. Pikkov, M., Rang, T.: SiC Schottky Diode for Power Converters. Proc. of International PEDC2001 Power Electronics Devices Compatibility 2nd Conference, 3-5 Sept., Zielona Góra, Poland, 2001, 156-161. Rang, T.: Modelling of inhomogeneities of SiC Schottky interfaces (invited). In “Software for Electrical Engineering Analysis and Design V”, Ed. By WIT, WIT Press, Sothampton, Great Britain, 2001, 3-15. Kasemaa, A., Rang, T.: CMOS SP chip for resistor type semiconductor gas sensors. Proc. BEC2000, Oct. 8-11, 2000, Tallinn, Estonia, 2000, 255-256. Korolkov, O., Rang, T.: Comparative Characteristics of Diffusion Welded Al contacts to 6H- and 4H-SiC Substrates. Proc. BEC2000, Oct. 8-11, 2000, Tallinn, Estonia, 2000, 23-26. Kurel, R., Rang, T.: Analysis of peak current for current crowding effect in 4H- and 6H- SiC Schottky structures. Proc. BEC2000, Oct. 8-11, Tallinn, Estonia, 2000, 235-236. Kurel, R., Rang, T.: Hot Spots Caused by Contact Inhomogeneities in 4H- and 6H-SiC Schottky Structures. In “Advanced Computational Methods in Heat Transfer VI”, Editors B. Sundén, C. A. Brebbia, WIT Press, Southampton, Great Britain, 2000, 437-444. Kurel, R., Rang, T.: Temperature Influence on Current Suppressing Effect in SiC Schottky Diode. In "Micromaterials", Eds. B. Michel, T. Winkler, M. Werner, H. Fecht, ddp Publisher, Dresden, Germany, ISBN 3-932434-15-3, 2000, 1208-1209. Proceedings of Baltic Electronics Conference (BEC2000), 361 pgs. Rang, T., Korolkov, O., Pikkov, M.: Large Area 4H-SiC Power Schottky Diode. In "Micromaterials", Eds. B. Michel, T. Winkler, M. Werner, H. Fecht, ddp Publisher, Dresden, Germany, ISBN 3-932434-15-3, 2000, 890-893. Rang, T., Korolkov, O., Pikkov, M.: Large area 6H-SiC Schottky Diode. Proceedings of the Estonian Academy of Sciences, Engineering, v. 6/2, 2000, 155-159. Kasemaa, A., Rang, T.: Semiconductor based alcohol sensing element. Proc. of 6th NEXUSPAN Workshop "Microsystems Technology Activities in Baltic Region", April 23-24, Vilnius, Lithuania, 1999, 82-84. Rang, T., Korolkov, O., Kurel, R., Pikkov, M.: Large area high quality interfaces to SiC substrates - technology and modelling. In "Materials Mechanics; Fracture Mechanics; Micro Mechanics", Eds. T. Winkler and A. Schubert, ddp Publisher, Dresden, Germany , 1999, 574-579. Rang, T., Korolkov, O., Pikkov, M.: Metallization technologies for wide band-gap semiconductor substrates (invited). Proc. of 6th NEXUSPAN Workshop "Microsystems Technology Activities in Baltic Region", April 23-24, Vilnius, Lithuania, 1999, 27-30. Rang, T., Kurel, R.: Self-heating phenomenon and current suppressing effect at the SiC Schottky interfaces. In "Software for Electrical Engineering. Analysis and design IV" (Eds. A. Konrad and C. A. Brebbia), WIT Press, 1999, 153-162. Koel, A., Nilsson, H., Masszi, F., Rang, T.: The Permeable-Base Transistor. Proc. of the BEC'98, Oct.7-10, Tallinn, Estonia, 1998, 287-290. Korolkov. O., Rang, T.: Diffusion welding technology for 6H-SiC substrates. Proc. of the BEC'98, Oct.7-10, Tallinn, Estonia, 1998, 2251-252. Kurel, R., Rang, T.: Ambient temperature influence on current suppressing effect caused by self-heating phenomenon at 6H-SiC Schottky interfaces. Proc. of the BEC'98, Oct.7-10, Tallinn, Estonia, 1998, 253-254. Kurel, R., Rang, T.: Self-heating phenomenon and current suppressing effect at 6H-SiC Schottky interfaces. Proc. of 5th NEXUSPAN Workshop on Thermal Aspects in Microsystem Technology. May 6-8, Budapest, Hungary, 1998, 88-91. Proceedings of Baltic Electronics Conference (BEC1998), 389 pgs. Rang, T.: Contact manufacturing technologies for wide band-gap semiconductor materials (invited). Proc. of the BEC'98, Oct.7-10, Tallinn, Estonia, 1998, 17-27. Korolkov, O., Rang, T.: Diffusion Welded Contacts for Silicon Semiconductor Devices. . In "Micromaterials", Eds. B. Michel, T. Winkler, ddp Publisher, Dresden, Germany, ISBN 3-932434-05-6, 1997, 120-123. Rang, T., Blum, A.: Physical modelling of multimetal interfaces on SiC substrate. Trans. on Estonian Academy of Sciences. Engineering, v. 4, 1997, 250-259. Rang, T., Blum, A.: Temperature effects in alloy metal and 6H-SiC substrate Schottky contacts caused by the current suppressing effect. In "Micromaterials", Eds. B. Michel, T. Winkler, ddp Publisher, Dresden, Germany, ISBN 3-932434-05-6, 1997, 45-52. Rang, T.: Modelling of tunnelling current in metal alloy contacts to 6H- and 4H-SiC substrates. In “MICROSIM II, Simulation and Design of Microsystems and Microstructures”, Eds. R. A. Adey, Ph. Renaud, Comp. Mechanics Pub., 1997, 23-31. Korolkov, O., Rang, T.: High quality metal ceramic interfaces using diffusion welding technology. Proc. of the ASDAM’96, Oct. 20-24, Bratislava, Slovakia, 1996, 309-312. Korolkov, O., Rang, T.: The diffusion welding technology as a method of metallization of ceramic substrates. Proc of the 5th International Baltic Electronics Conference (BEC’96), Oct. 7-11, Tallinn, Estonia, 1996, 479-482. Proceedings of Baltic Electronics Conference (BEC1996), 491 pgs Rang, T., Blum, A.: Current suppressing effect in alloy metal semiconductor Schottky contacts. Proc of the 5th International Baltic Electronics Conference (BEC’96), Oct. 7-11, Tallinn, Estonia, 1996, 81-84. Rang, T., Blum, A.: Two-dimensional modelling of alloy metal Schottky contacts to 6H SiC substrate. In “Software for Electrical Engineering Analysis and Design”, Ed. P. P. Silvester, Comp. Mech. Pub., 1996, 347-356. Rang, T.: Modelling of metal alloy contacts to semiconductor substrate. In “Simulation and Design of Microsystems and Microstructures”, Eds. R. A. Adey, A. Lahrmann, C. Lessmöllmann, Comp. Mechanics Pub., 1995, 257-265. Jávor, A., Rang, T., Székely, V., Tarnay, K., Velmre, E.: Modelling in semiconductor electronics (monograph). Academia Kiadó, Budapest, Hungary, 1993, 484 pg.

viimati muudetud: 17.09.2005

Curriculum Vitae (CV)
1.	First Name	Toomas
2.	Surname	Rang
3.	Institution	Department of Electronics; Tallinn University of Technology
4.	Position	Professor, Head of the Department
5.	Date of birth	10.11.1951 (day.month.year)
6.	Education	Tallinn Polytechnical Institute 1970-1975; Electronics Engineer Budapest Technical University 1977-1981 PhD studies Goethe Institute in Prien 1984; German language advanced course Estonian School of Diplomacy 1990-1991; Diplomacy and international relations Tallinn Technical University Adult Training Centre 1999; Academic tutorship MLP Baltic/Carlson Learning Company 2000; DiSC leadership course
7.	Research and professional experience	1970-1975 Tallinn Polytechnical Institute; student, specialization industrial electronics 1975-1977 Tallinn Polytechnical Institute; senior engineer at the Department of Electronics 1977-1981 PhD studies at Budapest Technical University 1981-1984 Tallinn Polytechnical Institute; senior lecturer at the Department of Electronics 1984-1985 Uni des Saarlandes (Gearmany) Guest researcher 1985-1986 Tallinn Polytechnical Institute; associate professor at the Department of Electronics and the dean of the Faculty of Automatics 1986-1996 Tallinn Technical Univeristy; associate professor at the Department of Electronics Since 1996 Tallinn University of Technology, Full Professor and the Head of the Department of Electronics
8.	Academic degree	PhD
9.	Dates and sites of earning the degrees	Hungarian Academy of Sciences, 1981
10.	Honours/awards	2000, Golden Badge of Tallinn University of Technology
11.	Research-administrative experience	IEEE (USA) member Member of Estonian Electronics Engineers Expert of scientific publications for the conferences Micromat’97, Micromat2000, Microsim’97, Therminic’96, Electrosoft 1999, Electrosoft 2001, BEC1996-2005 External expert for British Engineering and Physical Sciences Research Council Expert for EU Leonardo da Vinci program Member of the International Porgram Commitees for MicroMat (Germany), Electrosoft (UK) and BEC (Eestonia) Member of the expert council for the book series "Electrical and Electronics Engineering" (WIT Press, UK)
12.	Supervised dissertations	Mirjam Kuuse, MSc, 2005, superv. Toomas Rang. Temperatuuri mōju integraallülituste käitumisele. Tallinn Raido Kurel, DSc, 2005, superv. Toomas Rang. Investigation of Electrical Characteristics of SiC Based Complementary JBS Structures. Tallinn Rainer Taniloo, DSc, 2005, superv. Toomas Rang. ökonoomsete negatiivse diferentsiaaltakistusega astmete ja elementide disainimine ja optimeerimine. Tallinn Oleg Korolkov, DSc, 2004, superv. Toomas Rang. Formation of Diffusion Welded Al Contacts to Semiconductor Silicon Carbide. Tallinn Andrei Pokatilov, MSc, 2003, superv. Toomas Rang. Elektriliste suuruste mõõtmiste automatiseerimine. Tallinn Argo Kasemaa, MSc, 2003, superv. Toomas Rang. Tallinna Tehnikaülikooli Kuressaare Kolledži elektroonika õppekava. Tallinn Svetlana Kolessova, MSc, 2002, superv. Toomas Rang. Sidesüsteemide kiire prototüüpimise sigma-delta emulaatori ja mitmeastmelise inegreeriva kammfiltri disain. Tallinn Raido Kurel, MSc, 2000, superv. Toomas Rang. Current Crowding Effect in SiC Schottky Structures. Tallinn Ants Koel, MSc, 1998, superv. Toomas Rang. Numerical Modelling of Semiconductor Devices. Tallinn Oleg Korolkov, MSc, 1998, superv. Toomas Rang. Investigation of Silicon Power Semiconductor Devices manufactured Using Diffusion Welding Technology. Tallinn
13.	Current research program	Investigation of metallization technologies for wide band-gap semiconductor materials based devices and structures and their physical-matematical modelling
14.	Current grant funding	Target oriented research topic 0141754s01 "Data acquisition and surveillance systems: electronic components, circuits and technology, models, algorithms, methods of systems integration" Grant G5901 "Wide bandgap semiconductors based Schottky interfaces - transport models for charge carriers and electro physical phenomena influencing the parameters of the transport models" Industrial contract 038L "Development of GaAs based rectifying stacks"
15.	List of most important publications	Korolkov, O., Rang, T., Syrkin, A., and Dmitriev, V: Diffusion Welding Techniques for Power SiC Schottky Packaging. In “Silicon Carbide and Related materials”, Trans Tech Publications Ltd, Switzerland, 2006, (4 pages in press). Pikkov, M., Rang, T., Pokatilov, A.:. SiC Schottky Diode for Use in Power Convertors. Proc. of 12th Int. Power Electronics and Motion Control Conference EPE-PEMC 2006, Portoroz, Slovenia, Aug.30-Sept.1, 2006. (hindamisel) Korolkov, O., Rang, T., Syrkin, A., and Dmitriev, V: Diffusion Welding Techniques for Power SiC Schottky Packaging. Final Program of the 12th International Conference on Silicon Carbide and Related Materials ICSCRM 2005, September 18-23, 2005 Pittsburgh , PA, USA, 71. Rang, T., Kurel, R., Higelin, G., Poirier, L.: Current Crowding Phenomenon in JBS structures. In “Computer Methods and Experimental Measurements for Surface Effects and Contact Mechanics VII”, Eds. J. T. M. de Hosson, C. A. Brebbia, S-I. Nishida, WIT Press, Southampton, 2005, 387-396. Korolkov, O., Ljutov, J., Kuznetsova, N., Ruut, J., Rang, T.: Analysis of the Schottky parameters for diffusion-welded aluminium contacts to p-and n-type SiC. Proceedings BEC2004, Tallinn, October 3-6, 2004, 51-53. Korolkov, O., Ruut, J., Kuznetsova, N, Rang, T: The Basic Parameters of Diffusion Welded Al Schottky Contacts to p- and n-SiC. In “Silicon Carbide and Related Materials 2003” Eds. R. Madar, J. Camassel, E. Blanquet, Trans Tech Publications Ltd, Switzerland, 2004, 857-860. Proceedings of Baltic Electronics Conference (BEC2004), 349 pgs. Rang, T, Higelin, G., Kurel, R.: Numerical study of current crowding phenomenon in complementary 4H-SiC JBS rectifiers. In “Silicon Carbide and Related Materials 2003”, Eds. R. Madar, J. Camassel, E. Blanquet, Trans Tech Publications Ltd, Switzerland, 2004, 1045-1048. Rang, T., Korolkov, O., Ljutov, J.: Interpretation of some physical parameters for SiC Schottky interfaces manufactured by diffusion welding technology. Proc. Estonian Acad. Sci. Eng., v. 103, 2004, 179-184. Rang, T., Korolkov, O., Pikkov, M: Schottky Diode. Patent EE 99 00205 U1, (12.07.1999). (uuendatud 2004). Rang, T., Kurel, R.: Comparison of Dynamic Behaviour of Complementary 6H- and 4H-SiC Schottky Structures using Numerical Simulation. Proc. Estonian Acad. Sci. Eng., v. 10/3, 2004, 173-178. Rang, T., Kurel. R., Higelin, G.: Numerical Study of turn-off Phenomenon in Compelementary 4H-SiC JBS Rectifiers. Proceedings BEC2004, Tallinn, October 3-6, 2004, 47-50. Rang, T., Vojtovich, V., Kuznetsova, N.: High Voltage GaAs diode Stacks: the choice of epistructures for assembling. Proc. of Design, Test, Integration and Packaging of MEMS/MOEMS – DTIP2004, 12-14 May 2004, Montreux, Switzerland, 199-202. Vojtovich, V., Kuznetsova, N., Rang, T., K., Pikkov, M.: Comparison of GaAs Based High Voltage Stacks. 11th International Power Electronics and Motion Control Conference, 2-4 Sept. 2004, Riga, Latvia, CD-ROM, ISBN 9984-010-3, 4 pgs. Korolkov, O, Rang, T., Kurel, R.: Investigation of the Combined Stress and Strain Situation in Diffusion Welded Rectifying Elements. In “Surfacse Treatment VI”, Edited by C. A. Brebbia, J. T. M de Hosson, S-I. Nishida, WIT Press, 2003, 307-316. Korolkov, O., Rang, T., Syrkin, A., Dmitriev, V.: Diffusion Welded Al Contacts to p-type SiC. In “Silicon Carbide and Related Materials 2002 (ECSCRM2002)”, Eds. P. Bergman and E. Janzén, Trans Tech Publications Ltd, Switzerland, 2003, 697-700. Korolkov, O, Rang, T., Kuznetsova, J., Ruut, J: Preliminary Investigation of Diffusion Welded Contacts to p-type 6H-SiC. Proc. of 8th Baltic Electronics Conference. Oct 6-9, Tallinn, Estonia, 2002, 55-56. Korolkov, O., Rang, T.: Large area 4H-SiC Schottky structure with defects in epitaxial layer. In ”Silicon Carbide and Related materials 2001. Part 2”. Editors: S. Yoshida, S. Nishine, H. Harima, T. Kimoto, Trans Tech Publications Ltd, Switzerland, 2002, 941-944. Proceedings of Baltic Electronics Conference (BEC2002), 409 pgs. Korolkov, O., Rang,T.: Comparative characteristics of 6H- and 4H-SiC surfaces in diffusion welding. Proc. Estonian Acad. Sci. Eng., v. 7, No. 4, 2001, 347-353. Korolkov, O., Rang, T.: Formation of Large Area Al contacts on 6H- and 4H-SiC Substrates. In “Silicon Carbide and Related Materials ECSCRM2000). Editors: G. Pensl, D. Stephani, M. Hundhausen, Trans Tech Publications Ltd, Switzerland, 2001, 603-606. Korolkov, O., Vojtovich, V., Rang, T.: Subcontact layers in LPE structures for forming the ohmic contacts on GaAs semiconductor substrates. Abstract Book of 13th American Conference on Crystal Growth and Epitaxy. August 12-16, 2001, Burlington, Vermont, USA, 133. Pikkov, M., Rang, T.: SiC Schottky Diode for Power Converters. Proc. of International PEDC2001 Power Electronics Devices Compatibility 2nd Conference, 3-5 Sept., Zielona Góra, Poland, 2001, 156-161. Rang, T.: Modelling of inhomogeneities of SiC Schottky interfaces (invited). In “Software for Electrical Engineering Analysis and Design V”, Ed. By WIT, WIT Press, Sothampton, Great Britain, 2001, 3-15. Kasemaa, A., Rang, T.: CMOS SP chip for resistor type semiconductor gas sensors. Proc. BEC2000, Oct. 8-11, 2000, Tallinn, Estonia, 2000, 255-256. Korolkov, O., Rang, T.: Comparative Characteristics of Diffusion Welded Al contacts to 6H- and 4H-SiC Substrates. Proc. BEC2000, Oct. 8-11, 2000, Tallinn, Estonia, 2000, 23-26. Kurel, R., Rang, T.: Analysis of peak current for current crowding effect in 4H- and 6H- SiC Schottky structures. Proc. BEC2000, Oct. 8-11, Tallinn, Estonia, 2000, 235-236. Kurel, R., Rang, T.: Hot Spots Caused by Contact Inhomogeneities in 4H- and 6H-SiC Schottky Structures. In “Advanced Computational Methods in Heat Transfer VI”, Editors B. Sundén, C. A. Brebbia, WIT Press, Southampton, Great Britain, 2000, 437-444. Kurel, R., Rang, T.: Temperature Influence on Current Suppressing Effect in SiC Schottky Diode. In "Micromaterials", Eds. B. Michel, T. Winkler, M. Werner, H. Fecht, ddp Publisher, Dresden, Germany, ISBN 3-932434-15-3, 2000, 1208-1209. Proceedings of Baltic Electronics Conference (BEC2000), 361 pgs. Rang, T., Korolkov, O., Pikkov, M.: Large Area 4H-SiC Power Schottky Diode. In "Micromaterials", Eds. B. Michel, T. Winkler, M. Werner, H. Fecht, ddp Publisher, Dresden, Germany, ISBN 3-932434-15-3, 2000, 890-893. Rang, T., Korolkov, O., Pikkov, M.: Large area 6H-SiC Schottky Diode. Proceedings of the Estonian Academy of Sciences, Engineering, v. 6/2, 2000, 155-159. Kasemaa, A., Rang, T.: Semiconductor based alcohol sensing element. Proc. of 6th NEXUSPAN Workshop "Microsystems Technology Activities in Baltic Region", April 23-24, Vilnius, Lithuania, 1999, 82-84. Rang, T., Korolkov, O., Kurel, R., Pikkov, M.: Large area high quality interfaces to SiC substrates - technology and modelling. In "Materials Mechanics; Fracture Mechanics; Micro Mechanics", Eds. T. Winkler and A. Schubert, ddp Publisher, Dresden, Germany , 1999, 574-579. Rang, T., Korolkov, O., Pikkov, M.: Metallization technologies for wide band-gap semiconductor substrates (invited). Proc. of 6th NEXUSPAN Workshop "Microsystems Technology Activities in Baltic Region", April 23-24, Vilnius, Lithuania, 1999, 27-30. Rang, T., Kurel, R.: Self-heating phenomenon and current suppressing effect at the SiC Schottky interfaces. In "Software for Electrical Engineering. Analysis and design IV" (Eds. A. Konrad and C. A. Brebbia), WIT Press, 1999, 153-162. Koel, A., Nilsson, H., Masszi, F., Rang, T.: The Permeable-Base Transistor. Proc. of the BEC'98, Oct.7-10, Tallinn, Estonia, 1998, 287-290. Korolkov. O., Rang, T.: Diffusion welding technology for 6H-SiC substrates. Proc. of the BEC'98, Oct.7-10, Tallinn, Estonia, 1998, 2251-252. Kurel, R., Rang, T.: Ambient temperature influence on current suppressing effect caused by self-heating phenomenon at 6H-SiC Schottky interfaces. Proc. of the BEC'98, Oct.7-10, Tallinn, Estonia, 1998, 253-254. Kurel, R., Rang, T.: Self-heating phenomenon and current suppressing effect at 6H-SiC Schottky interfaces. Proc. of 5th NEXUSPAN Workshop on Thermal Aspects in Microsystem Technology. May 6-8, Budapest, Hungary, 1998, 88-91. Proceedings of Baltic Electronics Conference (BEC1998), 389 pgs. Rang, T.: Contact manufacturing technologies for wide band-gap semiconductor materials (invited). Proc. of the BEC'98, Oct.7-10, Tallinn, Estonia, 1998, 17-27. Korolkov, O., Rang, T.: Diffusion Welded Contacts for Silicon Semiconductor Devices. . In "Micromaterials", Eds. B. Michel, T. Winkler, ddp Publisher, Dresden, Germany, ISBN 3-932434-05-6, 1997, 120-123. Rang, T., Blum, A.: Physical modelling of multimetal interfaces on SiC substrate. Trans. on Estonian Academy of Sciences. Engineering, v. 4, 1997, 250-259. Rang, T., Blum, A.: Temperature effects in alloy metal and 6H-SiC substrate Schottky contacts caused by the current suppressing effect. In "Micromaterials", Eds. B. Michel, T. Winkler, ddp Publisher, Dresden, Germany, ISBN 3-932434-05-6, 1997, 45-52. Rang, T.: Modelling of tunnelling current in metal alloy contacts to 6H- and 4H-SiC substrates. In “MICROSIM II, Simulation and Design of Microsystems and Microstructures”, Eds. R. A. Adey, Ph. Renaud, Comp. Mechanics Pub., 1997, 23-31. Korolkov, O., Rang, T.: High quality metal ceramic interfaces using diffusion welding technology. Proc. of the ASDAM’96, Oct. 20-24, Bratislava, Slovakia, 1996, 309-312. Korolkov, O., Rang, T.: The diffusion welding technology as a method of metallization of ceramic substrates. Proc of the 5th International Baltic Electronics Conference (BEC’96), Oct. 7-11, Tallinn, Estonia, 1996, 479-482. Proceedings of Baltic Electronics Conference (BEC1996), 491 pgs Rang, T., Blum, A.: Current suppressing effect in alloy metal semiconductor Schottky contacts. Proc of the 5th International Baltic Electronics Conference (BEC’96), Oct. 7-11, Tallinn, Estonia, 1996, 81-84. Rang, T., Blum, A.: Two-dimensional modelling of alloy metal Schottky contacts to 6H SiC substrate. In “Software for Electrical Engineering Analysis and Design”, Ed. P. P. Silvester, Comp. Mech. Pub., 1996, 347-356. Rang, T.: Modelling of metal alloy contacts to semiconductor substrate. In “Simulation and Design of Microsystems and Microstructures”, Eds. R. A. Adey, A. Lahrmann, C. Lessmöllmann, Comp. Mechanics Pub., 1995, 257-265. Jávor, A., Rang, T., Székely, V., Tarnay, K., Velmre, E.: Modelling in semiconductor electronics (monograph). Academia Kiadó, Budapest, Hungary, 1993, 484 pg.

last updated: 17.09.2005