[ sulge aken ]
| Elulookirjeldus (CV) | ||
| 1. | Eesnimi | Oleg |
| 2. | Perekonnanimi | Korolkov |
| 3. | Töökoht | Tallinna Tehnikaülikooli Elektroonikainstituut |
| 4. | Ametikoht | Vanemteadur |
| 5. | Sünniaeg | 03.08.1947 (päev.kuu.aasta) |
| 6. | Haridus | Tallinna 23 Keskkool 1954-1965 St. Petersburg Tehnikaülikool 1965-1971 Magistrantuur Tallinna Tehnikaülikoolis 1997-1998 Doktorantuur Tallinna Tehnikaülikoolis 1999-2002 |
| 7. | Teenistuskäik | 1971-1977 tehnololoog TEI-s 1977-1990 vanemteadur TEI-s 1990-1992 laborijuhataja TEI-s 1992-1997 Firma Diftehno tegevjuht 1997-1999 insener elektroonikainstituudis 1999-2004 teadur elektroonikainstutuudis 2004- kuni k.a. vanemteadur elektroonikainstituudis |
| 8. | Teaduskraad | MSci, E.E. PhD, E.E. |
| 9. | Teaduskraadi välja andnud asutus, aasta |
Tallinna Tehnikaülikool 1998 Tallinna Tehnikaülikool 2004 |
| 10. | Tunnustused | ei ole |
| 11. | Teadusorganisatsiooniline ja –administratiivne tegevus |
- |
| 12. | Juhendamisel kaitstud väitekirjad |
Natalja Kuznetsova, MSc, 2004, juh. Oleg Korolkov. Kahe Metalliseerimismeetodi - pihustamine ja difusioonkeevitus - vōrdlus rakendatuna SiC Schottky kontaktidele. Tallinn |
| 13. | Teadustöö põhisuunad | Laia keelutsooniga materjalidest pooljuhtstruktuuride kontaktide valmistamistehnoloogiate uurimine ja kontaktialade füüsikalis-matemaatiline modelleerimine |
| 14. | Jooksvad grandid | Sihtfinantseerimine 01411754s01 "Seire ja analüüsihôivesüsteemid – elektroonsedkomponendid, tehnoloogiad, lülitused, mudelid,algoritmid, süsteemi-integratsiooni meetodid" G5901 ETF "Schottky siirded laia keelutsooniga pooljuhtides: Laengukandjate transport ja nende mudelite parameetreid mōjutavad elektrofüüsikalised nähtused" G5917 ETF "Metall-SiC kontaktkihi structuuridefektide uurimine" "GaAs pingekordistite väljatöötamine" (Leping 038L) |
| 15. | Teaduspublikatsioonid |
Korolkov, O.: Formation of Diffused Welded Al Contacts to Semiconductor Silicon Carbide. TUT Press, 2004, 184 pgs (PhD Dissertation). ISSN 1406-4731; ISBN 9985-59-497-5. Korolkov, O., Ljutov, J., Kuznetsova, N., Ruut, J., Rang, T.: Analysis of the Schottky parameters for diffusion-welded aluminium contacts to p-and n-type SiC. Proceedings BEC2004, Tallinn, October 3-6, 2004, 51-53. Korolkov, O., Ruut, J., Kuznetsova, N, Rang, T: The Basic Parameters of Diffusion Welded Al Schottky Contacts to p- and n-SiC. In “Silicon Carbide and Related Materials 2003” Eds. R. Madar, J. Camassel, E. Blanquet, Trans Tech Publications Ltd, Switzerland, 2004, 857-860. Rang, T., Korolkov, O., Ljutov, J.: Interpretation of some physical parameters for SiC Schottky interfaces manufactured by diffusion welding technology. Proc. Estonian Acad. Sci. Eng., v. 103, 2004, 179-184. Rang, T., Korolkov, O., Pikkov, M: Schottky Diode. Patent EE 99 00205 U1, (12.07.1999, uuendatud 2004). Korolkov, O, Rang, T., Kurel, R.: Investigation of the Combined Stress and Strain Situation in Diffusion Welded Rectifying Elements. In “Surfacse Treatment VI”, Edited by C. A. Brebbia, J. T. M de Hosson, S-I. Nishida, WIT Press, 2003, 307-316. Korolkov, O., Rang, T., Syrkin, A., Dmitriev, V.: Diffusion Welded Al Contacts to p-type SiC. In “Silicon Carbide and Related Materials 2002 (ECSCRM2002)”, Eds. P. Bergman and E. Janzén, Trans Tech Publications Ltd, Switzerland, 2003, 697-700. Korolkov, O., Ruut, J., Kuznetsova, N, Rang, T: The Basic Parameters of Diffusion Welded Al Schottky Contacts to p- and n-SiC. Final Programm of the 10th International Conference on Silicon Carbide and Related Materials ICSCRM2003, October 5-10, 2003, Lyon, France, 142. Korolkov, O, Rang, T., Kuznetsova, J., Ruut, J: Preliminary Investigation of Diffusion Welded Contacts to p-type 6H-SiC. Proc. of 8th Baltic Electronics Conference. Oct 6-9, Tallinn, Estonia, 2002, 55-56. Korolkov, O., Rang, T.: Large area 4H-SiC Schottky structure with defects in epitaxial layer. In ”Silicon Carbide and Related materials 2001. Part 2”. Editors: S. Yoshida, S. Nishine, H. Harima, T. Kimoto, Trans Tech Publications Ltd, Switzerland, 2002, 941-944. Korolkov, O., Rang,T.: Comparative characteristics of 6H- and 4H-SiC surfaces in diffusion welding. Proc. Estonian Acad. Sci. Eng., v. 7, No. 4, 2001, 347-353. Korolkov, O., Rang, T.: Formation of Large Area Al contacts on 6H- and 4H-SiC Substrates. In “Silicon Carbide and Related Materials ECSCRM2000). Editors: G. Pensl, D. Stephani, M. Hundhausen, Trans Tech Publications, 2001, 603-606. Korolkov, O., Rang, T.: Large area 4H-SiC Schottky structure with defects in epitaxial layer. Technical Digest of International Conference on Silicon Carbide and Related Materials 2001 (ICSCRM2001), Tsukuba, Japan, Oct.28-Nov.2, 2001, 625-626. Korolkov, O., Vojtovich, V., Rang, T.: Subcontact layers in LPE structures for forming the ohmic contacts on GaAs semiconductor substrates. Abstract Book of 13th American Conference on Crystal Growth and Epitaxy. August 12-16, 2001, Burlington, Vermont, USA, 133. Korolkov, O., Rang, T.: Comparative Characteristics of Diffusion Welded Al contacts to 6H- and 4H-SiC Substrates. Proc. BEC2000, Oct. 8-11, 2000, Tallinn, Estonia, 23-26. Rang, T., Korolkov, O., Pikkov, M.: Large Area 4H-SiC Power Schottky Diode. In "Micromaterials", Eds. B. Michel, T. Winkler, M. Werner, H. Fecht, ddp Publisher, Dresden, Germany, ISBN 3-932434-15-3, 2000, 890-893. Rang, T., Korolkov, O., Kurel, R., Pikkov, M.: Large area high quality interfaces to SiC substrates - technology and modelling. In "Materials Mechanics; Fracture Mechanics; Micro Mechanics", Eds. T. Winkler and A. Schubert, ddp Publisher, Dresden, Germany, 1999, 574-579. Korolkov. O., Rang, T.: Diffusion welding technology for 6H-SiC substrates. Proc. of the BEC'98, Oct.7-10, Tallinn, Estonia, 1998, 2251-252. Korolkov, O., Rang, T.: Diffusion Welded Contacts for Silicon Semiconductor Devices. In "Micromaterials", Eds. B. Michel, T. Winkler, ddp Publisher, Dresden, Germany, ISBN 3-932434-05-6, 1997, 120-123. Korolkov, O., Rang, T.: High quality metal ceramic interfaces using diffusion welding technology. Proc. of the ASDAM’96, Oct. 20-24, Bratislava, Slovakia, 1996, 309-312. Korolkov, O., Rang, T.: The diffusion welding technology as a method of metallization of ceramic substrates. Proc of the 5th International Baltic Electronics Conference (BEC’96), Oct. 7-11, Tallinn, Estonia, 1996, 479-482. Korolkov, O. Rang, T.: The diffusion welded contacts in power electronics. Proc. BEC'94, Oct. 9-14 Tallinn, Estonia, 1994, 573-578. |
viimati muudetud: 17.09.2005
| Curriculum Vitae (CV) | ||
| 1. | First Name | Oleg |
| 2. | Surname | Korolkov |
| 3. | Institution | Department of Electronics; Tallinn University of Technology |
| 4. | Position | Senior research fellow |
| 5. | Date of birth | 03.08.1947 (day.month.year) |
| 6. | Education | Tallinn Secondary School No. 23 1954-1965 St. Petersburg Technical University 1965-1971 MSci studies at Tallinn University of Technology 1997-1998 PhD studies at Tallinn University of Technology 1999-2002 |
| 7. | Research and professional experience |
1971-1977 tehnologist at TEI 1977-1990 senior researcher at TEI 1990-1992 head of the laboratory at TEI 1992-1997 Managing director of Diftehno Ltd 1997-1999 engineer at the Department of Electronics, TUT 1999-2004 research fellow at the Department of Electronics, TUT 2004 till today senior research fellow at the Department of Electronics, TUT |
| 8. | Academic degree | MSci, E.E. PhD, E.E. |
| 9. | Dates and sites of earning the degrees |
Tallinn University of Technology 1998 Tallinn University of Technology 2004 |
| 10. | Honours/awards | N o |
| 11. | Research-administrative experience |
- |
| 12. | Supervised dissertations |
Natalja Kuznetsova, MSc, 2004, superv. Oleg Korolkov. Kahe Metalliseerimismeetodi - pihustamine ja difusioonkeevitus - vōrdlus rakendatuna SiC Schottky kontaktidele. Tallinn |
| 13. | Current research program | Investigation of metallization technologies for wide band-gap semiconductor materials based devices and structures and their physical-matematical modelling |
| 14. | Current grant funding | Target oriented research topic 0141754s01 "Data acquisition and surveillance systems: electronic components, circuits and technology, models, algorithms, methods of systems integration" Grant G5901 "Wide bandgap semiconductors based Schottky interfaces - transport models for charge carriers and electro physical phenomena influencing the parameters of the transport models" Grant G5917 "Investigation of structural defects at metal-SiC interfaces" Industrial contract 038L "Development of GaAs based rectifying stacks" |
| 15. | List of most important publications |
Korolkov, O.: Formation of Diffused Welded Al Contacts to Semiconductor Silicon Carbide. TUT Press, 2004, 184 pgs (PhD Dissertation). ISSN 1406-4731; ISBN 9985-59-497-5. Korolkov, O., Ljutov, J., Kuznetsova, N., Ruut, J., Rang, T.: Analysis of the Schottky parameters for diffusion-welded aluminium contacts to p-and n-type SiC. Proceedings BEC2004, Tallinn, October 3-6, 2004, 51-53. Korolkov, O., Ruut, J., Kuznetsova, N, Rang, T: The Basic Parameters of Diffusion Welded Al Schottky Contacts to p- and n-SiC. In “Silicon Carbide and Related Materials 2003” Eds. R. Madar, J. Camassel, E. Blanquet, Trans Tech Publications Ltd, Switzerland, 2004, 857-860. Rang, T., Korolkov, O., Ljutov, J.: Interpretation of some physical parameters for SiC Schottky interfaces manufactured by diffusion welding technology. Proc. Estonian Acad. Sci. Eng., v. 103, 2004, 179-184. Rang, T., Korolkov, O., Pikkov, M: Schottky Diode. Patent EE 99 00205 U1, (12.07.1999, uuendatud 2004). Korolkov, O, Rang, T., Kurel, R.: Investigation of the Combined Stress and Strain Situation in Diffusion Welded Rectifying Elements. In “Surfacse Treatment VI”, Edited by C. A. Brebbia, J. T. M de Hosson, S-I. Nishida, WIT Press, 2003, 307-316. Korolkov, O., Rang, T., Syrkin, A., Dmitriev, V.: Diffusion Welded Al Contacts to p-type SiC. In “Silicon Carbide and Related Materials 2002 (ECSCRM2002)”, Eds. P. Bergman and E. Janzén, Trans Tech Publications Ltd, Switzerland, 2003, 697-700. Korolkov, O., Ruut, J., Kuznetsova, N, Rang, T: The Basic Parameters of Diffusion Welded Al Schottky Contacts to p- and n-SiC. Final Programm of the 10th International Conference on Silicon Carbide and Related Materials ICSCRM2003, October 5-10, 2003, Lyon, France, 142. Korolkov, O, Rang, T., Kuznetsova, J., Ruut, J: Preliminary Investigation of Diffusion Welded Contacts to p-type 6H-SiC. Proc. of 8th Baltic Electronics Conference. Oct 6-9, Tallinn, Estonia, 2002, 55-56. Korolkov, O., Rang, T.: Large area 4H-SiC Schottky structure with defects in epitaxial layer. In ”Silicon Carbide and Related materials 2001. Part 2”. Editors: S. Yoshida, S. Nishine, H. Harima, T. Kimoto, Trans Tech Publications Ltd, Switzerland, 2002, 941-944. Korolkov, O., Rang,T.: Comparative characteristics of 6H- and 4H-SiC surfaces in diffusion welding. Proc. Estonian Acad. Sci. Eng., v. 7, No. 4, 2001, 347-353. Korolkov, O., Rang, T.: Formation of Large Area Al contacts on 6H- and 4H-SiC Substrates. In “Silicon Carbide and Related Materials ECSCRM2000). Editors: G. Pensl, D. Stephani, M. Hundhausen, Trans Tech Publications, 2001, 603-606. Korolkov, O., Rang, T.: Large area 4H-SiC Schottky structure with defects in epitaxial layer. Technical Digest of International Conference on Silicon Carbide and Related Materials 2001 (ICSCRM2001), Tsukuba, Japan, Oct.28-Nov.2, 2001, 625-626. Korolkov, O., Vojtovich, V., Rang, T.: Subcontact layers in LPE structures for forming the ohmic contacts on GaAs semiconductor substrates. Abstract Book of 13th American Conference on Crystal Growth and Epitaxy. August 12-16, 2001, Burlington, Vermont, USA, 133. Korolkov, O., Rang, T.: Comparative Characteristics of Diffusion Welded Al contacts to 6H- and 4H-SiC Substrates. Proc. BEC2000, Oct. 8-11, 2000, Tallinn, Estonia, 23-26. Rang, T., Korolkov, O., Pikkov, M.: Large Area 4H-SiC Power Schottky Diode. In "Micromaterials", Eds. B. Michel, T. Winkler, M. Werner, H. Fecht, ddp Publisher, Dresden, Germany, ISBN 3-932434-15-3, 2000, 890-893. Rang, T., Korolkov, O., Kurel, R., Pikkov, M.: Large area high quality interfaces to SiC substrates - technology and modelling. In "Materials Mechanics; Fracture Mechanics; Micro Mechanics", Eds. T. Winkler and A. Schubert, ddp Publisher, Dresden, Germany, 1999, 574-579. Korolkov. O., Rang, T.: Diffusion welding technology for 6H-SiC substrates. Proc. of the BEC'98, Oct.7-10, Tallinn, Estonia, 1998, 2251-252. Korolkov, O., Rang, T.: Diffusion Welded Contacts for Silicon Semiconductor Devices. In "Micromaterials", Eds. B. Michel, T. Winkler, ddp Publisher, Dresden, Germany, ISBN 3-932434-05-6, 1997, 120-123. Korolkov, O., Rang, T.: High quality metal ceramic interfaces using diffusion welding technology. Proc. of the ASDAM’96, Oct. 20-24, Bratislava, Slovakia, 1996, 309-312. Korolkov, O., Rang, T.: The diffusion welding technology as a method of metallization of ceramic substrates. Proc of the 5th International Baltic Electronics Conference (BEC’96), Oct. 7-11, Tallinn, Estonia, 1996, 479-482. Korolkov, O. Rang, T.: The diffusion welded contacts in power electronics. Proc. BEC'94, Oct. 9-14 Tallinn, Estonia, 1994, 573-578. |
last updated: 17.09.2005
[ sulge aken ]