[ sulge aken ]

Elulookirjeldus (CV)
1.Eesnimi Natalja
2.Perekonnanimi Kuznetsova
3.Töökoht Tallinna Tehnikaülikooli Elektroonikainstituut
4.Ametikoht teadur
5.Sünniaeg 27.08.1980 (päev.kuu.aasta)
6.Haridus Tallinna Pelguranna Keskkool (lōpetamine 1999)
Bakalaureuse ōpingus Tallinna Tahnikaülikoolis 1999- 2003
Magistrantuur Tallinna Tehnikaülikoolis 2003-2005
Doktorantuur Tallinna Tehnikaülikoolis alates 2005
7.Teenistuskäik Tehnik elektroonikainstituudis 2001-2003
Insener elektroonikainstituudis 2003-2005
Teadur elektroonikainstituudis alates 2005
8.Teaduskraad MSci
9.Teaduskraadi välja
andnud asutus, aasta		 Tallinna Tehnikaülikool 2004
10.Tunnustused -
11.Teadusorganisatsiooniline
ja –administratiivne
tegevus		 EL vōrgustiku projekti ESTIA (Women in Science) elektroonikainstituudi poolne koordinaator
12.Juhendamisel kaitstud
väitekirjad
13.Teadustöö põhisuunad Laia keelutsooniga materjalidest pooljuhtstruktuuride kontaktide valmistamistehnoloogiate uurimine ja kontaktialade füüsikalis-matemaatiline modelleerimine
14.Jooksvad grandid Sihtfinantseerimine 01411754s01 "Seire ja analüüsihôivesüsteemid – elektroonsedkomponendid, tehnoloogiad, lülitused, mudelid,algoritmid, süsteemi-integratsiooni meetodid"

G5901 ETF "Schottky siirded laia keelutsooniga pooljuhtides: Laengukandjate transport ja nende mudelite parameetreid mōjutavad elektrofüüsikalised nähtused"

G5917 ETF "Metall-SiC kontaktkihi structuuridefektide uurimine"

"GaAs pingekordistite väljatöötamine" (Leping 038L)
15.Teaduspublikatsioonid

Korolkov, O., Ljutov, J., Kuznetsova, N., Ruut, J., Rang, T.: Analysis of the Schottky parameters for diffusion-welded aluminium contacts to p-and n-type SiC. Proceedings BEC2004, Tallinn, October 3-6, 2004, 51-53.

Korolkov, O., Ruut, J., Kuznetsova, N, Rang, T: The Basic Parameters of Diffusion Welded Al Schottky Contacts to p- and n-SiC. In “Silicon Carbide and Related Materials 2003” Eds. R. Madar, J. Camassel, E. Blanquet, Trans Tech Publications Ltd, Switzerland, 2004, 857-860.

Rang, T., Vojtovich, V., Kuznetsova, N.: High Voltage GaAs diode Stacks: the choice of epistructures for assembling. Proc. of Design, Test, Integration and Packaging of MEMS/MOEMS – DTIP2004, 12-14 May 2004, Montreux, Switzerland, 199-202.

Vojtovich, V., Kuznetsova, N., Rang, T., K., Pikkov, M.: Comparison of GaAs Based High Voltage Stacks. 11th International Power Electronics and Motion Control Conference, 2-4 Sept. 2004, Riga, Latvia, CD-ROM, ISBN 9984-010-3, 4 pgs.

Korolkov, O., Ruut, J., Kuznetsova, N, Rang, T: The Basic Parameters of Diffusion Welded Al Schottky Contacts to p- and n-SiC. Final Programm of the 10th International Conference on Silicon Carbide and Related Materials ICSCRM2003, October 5-10, 2003, Lyon, France, 142.

Korolkov, O, Rang, T., Kuznetsova, J., Ruut, J: Preliminary Investigation of Diffusion Welded Contacts to p-type 6H-SiC. Proc. of 8th Baltic Electronics Conference. Oct 6-9, Tallinn, Estonia, 2002, 55-56.

viimati muudetud: 17.09.2005

Curriculum Vitae (CV)
1.First Name Natalja
2.Surname Kuznetsova
3.Institution Department of Electronics;
Tallinn University of Technology
4.Position research fellow
5.Date of birth 27.08.1980 (day.month.year)
6.Education Tallinn Pelguranna Secondary School 1999
Bachelor studies at TUT 1999- 2003
MSci studies at TUT 2003-2005
PhD studies since 2005
7.Research and
professional experience		 Technician at the Department of Electronics 2001-2003
Engineer at the Department of Electronics 2003-2005
Research fellow at the Department of Electronics since 2005
8.Academic degree MSci
9.Dates and sites of
earning the degrees		 Tallinn University of Technology 2004
10.Honours/awards -
11.Research-administrative
experience		 Coordinator from the side of Department of Electronics of EU ESTIA Network project " Women in Science"
12.Supervised dissertations
13.Current research program Investigation of metallization technologies for wide band-gap semiconductor materials based devices and structures and their physical-matematical modelling
14.Current grant funding Target oriented research topic 0141754s01 "Data acquisition and surveillance systems: electronic components, circuits and technology, models, algorithms, methods of systems integration"

Grant G5901 "Wide bandgap semiconductors based Schottky interfaces - transport models for charge carriers and electro physical phenomena influencing the parameters of the transport models"

Grant G5917 "Investigation of structural defects at metal-SiC interfaces"

Industrial contract 038L "Development of GaAs based rectifying stacks"
15.List of most important publications

Korolkov, O., Ljutov, J., Kuznetsova, N., Ruut, J., Rang, T.: Analysis of the Schottky parameters for diffusion-welded aluminium contacts to p-and n-type SiC. Proceedings BEC2004, Tallinn, October 3-6, 2004, 51-53.

Korolkov, O., Ruut, J., Kuznetsova, N, Rang, T: The Basic Parameters of Diffusion Welded Al Schottky Contacts to p- and n-SiC. In “Silicon Carbide and Related Materials 2003” Eds. R. Madar, J. Camassel, E. Blanquet, Trans Tech Publications Ltd, Switzerland, 2004, 857-860.

Rang, T., Vojtovich, V., Kuznetsova, N.: High Voltage GaAs diode Stacks: the choice of epistructures for assembling. Proc. of Design, Test, Integration and Packaging of MEMS/MOEMS – DTIP2004, 12-14 May 2004, Montreux, Switzerland, 199-202.

Vojtovich, V., Kuznetsova, N., Rang, T., K., Pikkov, M.: Comparison of GaAs Based High Voltage Stacks. 11th International Power Electronics and Motion Control Conference, 2-4 Sept. 2004, Riga, Latvia, CD-ROM, ISBN 9984-010-3, 4 pgs.

Korolkov, O., Ruut, J., Kuznetsova, N, Rang, T: The Basic Parameters of Diffusion Welded Al Schottky Contacts to p- and n-SiC. Final Programm of the 10th International Conference on Silicon Carbide and Related Materials ICSCRM2003, October 5-10, 2003, Lyon, France, 142.

Korolkov, O, Rang, T., Kuznetsova, J., Ruut, J: Preliminary Investigation of Diffusion Welded Contacts to p-type 6H-SiC. Proc. of 8th Baltic Electronics Conference. Oct 6-9, Tallinn, Estonia, 2002, 55-56.

last updated: 17.09.2005

[ sulge aken ]