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Elulookirjeldus (CV)
1.Eesnimi Mihhail
2.Perekonnanimi Pikkov
3.Töökoht Tallinna Tehnikaülikooli elektroonikainstituut
4.Ametikoht Dotsent
5.Sünniaeg 11.01.1951 (päev.kuu.aasta)
6.Haridus Tallinn 23 Keskkool 1968
Tallinn Polütehniline Instituut (TPI) 1968–1973
Aspirantuur Moskva Energeetikainstituudis 1976 – 1979
7.Teenistuskäik TEI vanemteadur 1979-1987
ELIN vanemteadur 1987 – 1988
ELIN vanemōpetaja 1989 – 1997
ELIN vaneminsener 1997 – 1999
ELIN teadur 1999 – 2000
ELIN vanemteadur 2000 – 2002
ELIN dotsent alates 2003
8.Teaduskraad PhD
9.Teaduskraadi välja
andnud asutus, aasta		 Moscow 1979
10.Tunnustused -
11.Teadusorganisatsiooniline
ja –administratiivne
tegevus		 Instituudi töökaitse volinik
12.Juhendamisel kaitstud
väitekirjad
13.Teadustöö põhisuunad Laia keelutsooniga materjalidest pooljuhtstruktuuride kontaktide valmistamistehnoloogiate uurimine ja kontaktialade füüsikalis-matemaatiline modelleerimine
14.Jooksvad grandid 01411754s01 "Seire ja analüüsihôivesüsteemid – elektroonsedkomponendid, tehnoloogiad, lülitused, mudelid,algoritmid, süsteemi-integratsiooni meetodid"

G5901 ETF "Schottky siirded laia keelutsooniga pooljuhtides: Laengukandjate transport ja nende mudelite parameetreid mōjutavad elektrofüüsikalised nähtused"

"GaAs pingekordistite väljatöötamine" (Leping 038L)
15.Teaduspublikatsioonid

Rang, T., Korolkov, O., Pikkov, M: Schottky Diode. Patent EE 99 00205 U1, (12.07.1999, uuendatud 2004).

Vojtovich, V., Kuznetsova, N., Rang, T., K., Pikkov, M.: Comparison of GaAs Based High Voltage Stacks. 11th International Power Electronics and Motion Control Conference, 2-4 Sept. 2004, Riga, Latvia, CD-ROM, ISBN 9984-010-3, 4 pgs.

Pikkov, M., Rang, T.: SiC Schottky Diode for Power Converters. Proc. of International PEDC2001 Power Electronics Devices Compatibility 2nd Conference, 3-5 Sept., Zielona Góra, Poland, 2001, 156-161.

Pikkov, M.: Preliminary approach to the timing measurements for reverse recovery applied to SiC Schottky diode model. Proc. BEC2000, Tallinn, October 8-11, 321-322

Rang, T., Korolkov, O., Pikkov, M.: Large Area 4H-SiC Power Schottky Diode. In "Micromaterials", Eds. B. Michel, T. Winkler, M. Werner, H. Fecht, ddp Publisher, Dresden, Germany, ISBN 3-932434-15-3, 2000, 890-893.

Rang, T., Korolkov, O., Pikkov, M.: Large area 6H-SiC Schottky Diode. Proceedings of the Estonian Academy of Sciences, Engineering, v. 6/2, 2000, 155-159.

Rang, T., Korolkov, O., Kurel, R., Pikkov, M.: Large area high quality interfaces to SiC substrates - technology and modelling. In "Materials Mechanics; Fracture Mechanics; Micro Mechanics", Eds. T. Winkler and A. Schubert, ddp Publisher, Dresden, Germany, 1999, 574-579.

Rang, T., Korolkov, O., Pikkov, M.: Metallization technologies for wide band-gap semiconductor substrates (invited). Proc. of 6th NEXUSPAN Workshop "Microsystems Technology Activities in Baltic Region", April 23-24, Vilnius, Lithuania, 1999, 27-30.

viimati muudetud: 17.09.2005

Curriculum Vitae (CV)
1.First Name Mihhail
2.Surname Pikkov
3.Institution Department of Electronics;
Tallinn University of Technology
4.Position Associate Professor
5.Date of birth 11.01.1951 (day.month.year)
6.Education Tallinn Secondary Sc hool No. 23 1968
Tallinn Polytechnical Institute (TPI) 1968–1973
PhD studies at Moscow Institute of Energetics 1976 – 1979
7.Research and
professional experience		 TEI senior researcher 1979-1987
ELIN senior researcher 1987 – 1988
ELIN senior lecturer 1989 – 1997
ELIN senior engineer 1997 – 1999
ELIN research fellow 1999 – 2000
ELIN senior research fellow 2000 – 2002
ELIN associate professor since 2003
8.Academic degree PhD
9.Dates and sites of
earning the degrees		 Moscow 1979
10.Honours/awards -
11.Research-administrative
experience		 Work load officer at ELIN
12.Supervised dissertations
13.Current research program Investigation of metallization technologies for wide band-gap semiconductor materials based devices and structures and their physical-matematical modelling
14.Current grant funding Target oriented research topic 0141754s01 "Data acquisition and surveillance systems: electronic components, circuits and technology, models, algorithms, methods of systems integration"

Grant G5901 "Wide bandgap semiconductors based Schottky interfaces - transport models for charge carriers and electro physical phenomena influencing the parameters of the transport models"

Industrial contract 038L "Development of GaAs based rectifying stacks"
15.List of most important publications

Rang, T., Korolkov, O., Pikkov, M: Schottky Diode. Patent EE 99 00205 U1, (12.07.1999, uuendatud 2004).

Vojtovich, V., Kuznetsova, N., Rang, T., K., Pikkov, M.: Comparison of GaAs Based High Voltage Stacks. 11th International Power Electronics and Motion Control Conference, 2-4 Sept. 2004, Riga, Latvia, CD-ROM, ISBN 9984-010-3, 4 pgs.

Pikkov, M., Rang, T.: SiC Schottky Diode for Power Converters. Proc. of International PEDC2001 Power Electronics Devices Compatibility 2nd Conference, 3-5 Sept., Zielona Góra, Poland, 2001, 156-161.

Pikkov, M.: Preliminary approach to the timing measurements for reverse recovery applied to SiC Schottky diode model. Proc. BEC2000, Tallinn, October 8-11, 321-322

Rang, T., Korolkov, O., Pikkov, M.: Large Area 4H-SiC Power Schottky Diode. In "Micromaterials", Eds. B. Michel, T. Winkler, M. Werner, H. Fecht, ddp Publisher, Dresden, Germany, ISBN 3-932434-15-3, 2000, 890-893.

Rang, T., Korolkov, O., Pikkov, M.: Large area 6H-SiC Schottky Diode. Proceedings of the Estonian Academy of Sciences, Engineering, v. 6/2, 2000, 155-159.

Rang, T., Korolkov, O., Kurel, R., Pikkov, M.: Large area high quality interfaces to SiC substrates - technology and modelling. In "Materials Mechanics; Fracture Mechanics; Micro Mechanics", Eds. T. Winkler and A. Schubert, ddp Publisher, Dresden, Germany, 1999, 574-579.

Rang, T., Korolkov, O., Pikkov, M.: Metallization technologies for wide band-gap semiconductor substrates (invited). Proc. of 6th NEXUSPAN Workshop "Microsystems Technology Activities in Baltic Region", April 23-24, Vilnius, Lithuania, 1999, 27-30.

last updated: 17.09.2005

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