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Elulookirjeldus (CV)
1.Eesnimi Raido
2.Perekonnanimi Kurel
3.Töökoht Tallinna Tehnikaülikooli Elektroonikainstituut
4.Ametikoht Assistent
5.Sünniaeg 10.04.1975 (päev.kuu.aasta)
6.Haridus 2001 - 2005 TTÜ, PhD E.E.
1998 - 2000 TTÜ, M.Sc.E.E.
1993 - 1998 TTÜ, elektroonika inseneri diplom
7.Teenistuskäik Alates 1998 TTÜ, Infotehnoloogia teaduskond, Elektroonika Instituut, Elektroonikadisaini õppetooli assistent
1997 - 1998 AS Tigma, arvutitehnik
1995 - 1997 AS Eesti puhkereisid, arvutispetialist
8.Teaduskraad MSci E.E.
PhD E.E.
9.Teaduskraadi välja
andnud asutus, aasta		 TTÜ, 2000
TTÜ, 2005
10.Tunnustused Ei ole
11.Teadusorganisatsiooniline
ja –administratiivne
tegevus		 Infotehnoloogia teaduskonna ERASMUS programmi koordinaator
12.Juhendamisel kaitstud
väitekirjad
13.Teadustöö põhisuunad SiC Schottky struktuuride simuleerimine, GaAs dioodtulpade korpustamisvõimaluste uurimine
14.Jooksvad grandid Sihtfinantseerimise teema 0141754s01 "Seire- ja andmehõivesüsteemid - elektroonsed komponendid, tehnoloogia, lülitused, mudelid, algoritmid, süsteemi-integratsiooni meetodid"

Grant G5901 "Schottky siirded laia keelutsooniga pooljuhtides - laengukandjate transport ja nende mudelite parameetreid mõjutavad elektrofüüsikalised nähtused"

Leping 038L "GaAs baseeruvate pingekordistite väljatöötamine"
15.Teaduspublikatsioonid

Kurel, R.: Investigation of Electrical Characteristics of SiC Based Complementary JBS Structures. TUT Press, 2005, 178 pgs (PhD Dissertation). ISSN 1406-4731; ISBN 9985-59-554-8.

Rang, T., Kurel, R., Higelin, G., Poirier, L.: Current Crowding Phenomenon in JBS structures. In “Computer Methods and Experimental Measurements for Surface Effects and Contact Mechanics VII”, Eds. J. T. M. de Hosson, C. A. Brebbia, S-I. Nishida, WIT Press, Southampton, 2005, 387-396.

Rang, T, Higelin, G., Kurel, R.: Numerical study of current crowding phenomenon in complementary 4H-SiC JBS rectifiers. In “Silicon Carbide and Related Materials 2003”, Eds. R. Madar, J. Camassel, E. Blanquet, Trans Tech Publications Ltd, Switzerland, 2004, 1045-1048.

Rang, T., Kurel, R.: Comparison of Dynamic Behaviour of Complementary 6H- and 4H-SiC Schottky Structures using Numerical Simulation. Proc. Estonian Acad. Sci. Eng., v. 10/3, 2004, 173-178.

Rang, T., Kurel. R., Higelin, G.: Numerical Study of turn-off Phenomenon in Compelementary 4H-SiC JBS Rectifiers. Proceedings BEC2004, Tallinn, October 3-6, 2004, 47-50.

Korolkov, O, Rang, T., Kurel, R.: Investigation of the Combined Stress and Strain Situation in Diffusion Welded Rectifying Elements. In “Surfacse Treatment VI”, Edited by C. A. Brebbia, J. T. M de Hosson, S-I. Nishida, WIT Press, 2003, 307-316.

Rang, T, Higelin, G., Kurel, R.: Numerical study of current crowding phenomenon in complementary 4H-SiC JBS rectifiers. Final Programm of the 10th International Conference on Silicon Carbide and Related Materials ICSCRM2003, October 5-10, 2003, Lyon, France, 210.

Kurel, R., Udal, A.: Two-Dimensional Nonisothermal analysis of the Current Crowding Effext at Nonuniform SiC Schottky Contacts Using Device Simulator DYNAMIT-2DT. Proceedings BEC2002, Tallinn October 6-9, 2002, 51-54.

Kurel, R., Rang, T.: Analysis of peak current for current crowding effect in 4H- and 6H- SiC Schottky structures. Proc. BEC2000, Oct. 8-11, Tallinn, Estonia, 235-236.

Kurel, R., Rang, T.: Hot Spots Caused by Contact Inhomogeneities in 4H- and 6H-SiC Schottky Structures. In “Advanced Computational Methods in Heat Transfer VI”, Editors B. Sundén, C. A. Brebbia, WIT Press, Southampton, Great Britain, 2000, 437-444.

Kurel, R., Rang, T.: Temperature Influence on Current Suppressing Effect in SiC Schottky Diode. In "Micromaterials", Eds. B. Michel, T. Winkler, M. Werner, H. Fecht, ddp Publisher, Dresden, Germany, ISBN 3-932434-15-3, 2000, 1208-1209.

Rang, T., Kurel, R.: Self-heating phenomenon and current suppressing effect at the SiC Schottky interfaces. In "Software for Electrical Engineering. Analysis and design IV" (Eds. A. Konrad and C. A. Brebbia), WIT Press, 1999, 153-162.

Kurel, R., Rang, T.: Ambient temperature influence on current suppressing effect caused by self-heating phenomenon at 6H-SiC Schottky interfaces. Proc. of the BEC'98, Oct.7-10, Tallinn, Estonia, 1998, 253-254.

Kurel, R., Rang, T.: Self-heating phenomenon and current suppressing effect at 6H-SiC Schottky interfaces. Proc. of 5th NEXUSPAN Workshop on Thermal Aspects in Microsystem Technology. May 6-8, Budapest, Hungary, 1998, 88-91.

viimati muudetud: 17.09.2005

Curriculum Vitae (CV)
1.First Name Raido
2.Surname Kurel
3.Institution Department of Electronics;
Tallinn University of Technology
4.Position Assistant
5.Date of birth 10.04.1975 (day.month.year)
6.Education 2001 - 2005 TTÜ, PhD E.E.
1998 - 2000 TTÜ, M.Sc.E.E.
1993 - 1998 TTÜ, Diploma in Electronics
7.Research and
professional experience		 Since 1998 , TUT Faculty of Information Terchnology, Department of Elkectronics, assistant
1997-1998 Tigma Ltd, computer technician
1995-1997 Eesti Puhkusereisid Ltd Computer specialist
8.Academic degree MSci E.E.
PhD E.E.
9.Dates and sites of
earning the degrees		 TTÜ, 2000
TTÜ, 2005
10.Honours/awards No
11.Research-administrative
experience		 The coordinator of the ERASMUS Porgram in the Faculty of Information Technology
12.Supervised dissertations
13.Current research program SiC based Schottky structures and packaging of GaAs based voltage stacks
14.Current grant funding Target oriented research topic 0141754s01 "Data acquisition and surveillance systems: electronic components, circuits and technology, models, algorithms, methods of systems integration"

Grant G5901 "Wide bandgap semiconductors based Schottky interfaces - transport models for charge carriers and electro physical phenomena influencing the parameters of the transport models"

Industrial contract 038L "Development of GaAs based rectifying stacks"
15.List of most important publications

Kurel, R.: Investigation of Electrical Characteristics of SiC Based Complementary JBS Structures. TUT Press, 2005, 178 pgs (PhD Dissertation). ISSN 1406-4731; ISBN 9985-59-554-8.

Rang, T., Kurel, R., Higelin, G., Poirier, L.: Current Crowding Phenomenon in JBS structures. In “Computer Methods and Experimental Measurements for Surface Effects and Contact Mechanics VII”, Eds. J. T. M. de Hosson, C. A. Brebbia, S-I. Nishida, WIT Press, Southampton, 2005, 387-396.

Rang, T, Higelin, G., Kurel, R.: Numerical study of current crowding phenomenon in complementary 4H-SiC JBS rectifiers. In “Silicon Carbide and Related Materials 2003”, Eds. R. Madar, J. Camassel, E. Blanquet, Trans Tech Publications Ltd, Switzerland, 2004, 1045-1048.

Rang, T., Kurel, R.: Comparison of Dynamic Behaviour of Complementary 6H- and 4H-SiC Schottky Structures using Numerical Simulation. Proc. Estonian Acad. Sci. Eng., v. 10/3, 2004, 173-178.

Rang, T., Kurel. R., Higelin, G.: Numerical Study of turn-off Phenomenon in Compelementary 4H-SiC JBS Rectifiers. Proceedings BEC2004, Tallinn, October 3-6, 2004, 47-50.

Korolkov, O, Rang, T., Kurel, R.: Investigation of the Combined Stress and Strain Situation in Diffusion Welded Rectifying Elements. In “Surfacse Treatment VI”, Edited by C. A. Brebbia, J. T. M de Hosson, S-I. Nishida, WIT Press, 2003, 307-316.

Rang, T, Higelin, G., Kurel, R.: Numerical study of current crowding phenomenon in complementary 4H-SiC JBS rectifiers. Final Programm of the 10th International Conference on Silicon Carbide and Related Materials ICSCRM2003, October 5-10, 2003, Lyon, France, 210.

Kurel, R., Udal, A.: Two-Dimensional Nonisothermal analysis of the Current Crowding Effext at Nonuniform SiC Schottky Contacts Using Device Simulator DYNAMIT-2DT. Proceedings BEC2002, Tallinn October 6-9, 2002, 51-54.

Kurel, R., Rang, T.: Analysis of peak current for current crowding effect in 4H- and 6H- SiC Schottky structures. Proc. BEC2000, Oct. 8-11, Tallinn, Estonia, 235-236.

Kurel, R., Rang, T.: Hot Spots Caused by Contact Inhomogeneities in 4H- and 6H-SiC Schottky Structures. In “Advanced Computational Methods in Heat Transfer VI”, Editors B. Sundén, C. A. Brebbia, WIT Press, Southampton, Great Britain, 2000, 437-444.

Kurel, R., Rang, T.: Temperature Influence on Current Suppressing Effect in SiC Schottky Diode. In "Micromaterials", Eds. B. Michel, T. Winkler, M. Werner, H. Fecht, ddp Publisher, Dresden, Germany, ISBN 3-932434-15-3, 2000, 1208-1209.

Rang, T., Kurel, R.: Self-heating phenomenon and current suppressing effect at the SiC Schottky interfaces. In "Software for Electrical Engineering. Analysis and design IV" (Eds. A. Konrad and C. A. Brebbia), WIT Press, 1999, 153-162.

Kurel, R., Rang, T.: Ambient temperature influence on current suppressing effect caused by self-heating phenomenon at 6H-SiC Schottky interfaces. Proc. of the BEC'98, Oct.7-10, Tallinn, Estonia, 1998, 253-254.

Kurel, R., Rang, T.: Self-heating phenomenon and current suppressing effect at 6H-SiC Schottky interfaces. Proc. of 5th NEXUSPAN Workshop on Thermal Aspects in Microsystem Technology. May 6-8, Budapest, Hungary, 1998, 88-91.

last updated: 17.09.2005

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