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Elulookirjeldus (CV)
1.Eesnimi Vello
2.Perekonnanimi Valdna
3.Töökoht Tallinna Tehnikaülikool, Materjaliteaduse instituut
4.Ametikoht Vanemteadur
5.Sünniaeg 05.11.1937 (päev.kuu.aasta)
6.Haridus Tallinna Polütehniline Instituut 1963 Laevajõuseadmete insener-mehaanik
Uurali Teaduskeskuse Keemia Instituut 1984 Pooljuhtmat. tehnol./tehnikakandidaat
7.Teenistuskäik 1963-1966 Giprorõbfloti Tallinna Osakond insener-konstruktor
1967-1969 Tallinna Polütehniline Instituut aspirant
1970-1992 Tallinna Polütehniline Instituut vanemteadur, juhtivteadur
1993-2005 Tallinna Tehnikaülikool vanemteadur
8.Teaduskraad Tehnikakandidaat
9.Teaduskraadi välja
andnud asutus, aasta
Uurali Teaduskeskuse Keemia Instituut, 1984
10.Tunnustused ENSV teaduspreemia 1984
EV teaduspreemia 1998
11.Teadusorganisatsiooniline
ja –administratiivne
tegevus
Materials Research Society
Eesti Füüsika Selts
Eesti Keemia Selts
12.Juhendamisel kaitstud
väitekirjad
13.Teadustöö põhisuunad II-VI, III-VI ja IV-VI grupi pooljuhtmaterjalide süntees ja defektkoostise uurimine; luminestsentsmaterjalide, kiirgusdetektorite ja päikesekiirguse konverterite väljaarendamine nende ühendite baasil.
14.Jooksvad grandid 2003-06, ETF grant 5604, Faasitasakaalud süsteemides Cd-Te-Cl ja päikeseenergia fotovoltmuundurite materjaliarendus; teost.: TTÜ; põhitäitja (töö juht J. Hiie); finants.: ETF.

1997-05, TTÜ ja Bruker AXS, Inc. (USA) vaheline koostööleping V49; teost.: TTÜ, finants.: Bruker AXS, Inc., töö juht V. Valdna.
15.Teaduspublikatsioonid

Z.T. Kang, H. Menkara, B.K. Wagner, C.J. Summers, and V. Valdna. Synthesis and characterization of oxygen doped ZnTe for powder phosphor application, JMR, 20 (2005) 2510-2515.

V. Valdna. Optoelectronic properties of chlorine and oxygen doped CdTe thin films, Solar Energy Materials & Solar Cells, 87 (2005) 369-373.

J. Hiie, V. Valdna, J. Kois, M. Danilson, and V. Mikli. Chemistry of CdCl2:O2 Flux for CdTe Solar Cell Technology, Proc. 19th EPVSECE, Paris, 7-11 June 2004, Vol. II, 1929-1931.

Y. Diawara, R.D. Durst, G. Mednikova, T. Thorson, J. Hiie, V. Valdna. Scintillators for high efficiency and high spatial resolution in x-ray imaging applications, Proceedings of SPIE (2004), Vol. 5198 (Hard X-Ray And Gamma-Ray Detector Physics V), 119-125.

J. Hiie, V. Valdna and A. Taklaja. Modeling of Flux Composition for Thermal CdCl2:O2 Annealing of Polycrystalline CdTe, in: Mat. Res. Soc. Symp. Proc. Vol. 763 (2003) 397-402.

V. Valdna and J. Hiie. Efficiency Limits of CdTe Thin Film Solar Cells, Proceedings of the 17th European PVSE Conference, Munich, Germany 2002, 1233-1235.

V. Valdna and R.D. Durst. High efficiency polycrystalline phosphors and method of making same, US Patent Application No 09/313,565 filed May 14, 1999. European Patent Office Application No. 99113410.7-2102 filed 12.07.99. US Patent 6,254,806 B1, granted on July 3, 2001.

V. Valdna. Influence of Copper and Oxygen on the Optoelectronic Properties of Chlorine Doped CdTe Thin Films, Thin Solid Films, 387 (2001) 192-194.

V. Valdna, J. Hiie and A. Gavrilov. Defects in Chlorine Doped CdTe Thin Films, in: Polycrystalline Semiconductors VI – Bulk Materials, Thin Films, and Devices, O. Bonnaud, T. Mohammed-Brahim, H.P. Strunk, J.H. Werner, eds., in Series `Solid State Phenomena` Vols. 80-81, Scitech Publ., Uettikon am See, Switzerland 2001, 155-160.

V. Valdna. Stability of Chlorine-based Complex Defects in Group II-VI Semiconductors, Physica B: Physics of Condensed Matter, 308-310 (2001) 939-941.

J. Hiie and V. Valdna. Control of p-type Conductivity in CdTe by CdCl2 Vapor Phase Treatment, in: Proc. EUROMAT´99 Vol. 13, Functional Materials, Eds.: K. Grassie, E. Tenckhoff, G. Wegner, J. Hausselt and H. Hanselka, Wiley-VCH, Weinheim 2000, 261-266.

V. Valdna. Defects in CdTe-Based Photodetectors, in: Mat. Res. Soc. Symp. Proc. Vol. 607, Infrared Applications of Semiconductors III, Eds.: M. O. Manasreh, B. J. H. Stadler, I. Ferguson and Yong-Hang Zhang, Warrendale, Pennsylvania 2000, 241-246.

V. Valdna. Optoelectronic Properties of CdTe Thin Films, in: Proc. EUROMAT´99 Vol. 9, Interface Controlled Materials, Eds.: M. Rühle and H. Gleiter, Wiley-VCH, Weinheim 2000, 89-95.

V. Valdna, R. Durst and A. Mere. Experimental Studies of ZnS-based Phosphors, in: Proc. EUROMAT´99 Vol. 13, Functional Materials, Eds.: K. Grassie, E. Tenckhoff, G. Wegner, J. Hausselt and H. Hanselka, Wiley-VCH, Weinheim 2000, 117-120.

V. Valdna, R. Durst, J. Hiie, L. Jones and U. Kallavus. Complex Defects in ZnSe-based Phosphors, in: Proc. EUROMAT´99 Vol. 13, Functional Materials, Eds.: K. Grassie, E. Tenckhoff, G. Wegner, J. Hausselt and H. Hanselka, Wiley-VCH, Weinheim 2000, 112-116.

J. Hiie and V.Valdna. Annealing of Bulk Crystalline CdTe under CdCl2 Controlled Vapor Pressure, in: Proc. E-MRS 1999 Spring Meeting, Strasbourg 1999, O-PS 3/P16.

V. Valdna. p-Type Doping of CdTe, in: Polycrystalline Semiconductors V – Bulk Materials, Thin Films, and Devices, J.H. Werner, H.P. Strunk, H.W. Schock eds., in Series `Solid State Phenomena` Vols. 67-68, Scitech Publ., Uettikon am See, Switzerland 1999, 309-314.

V. Valdna. Stability of p-Type CdTe Thin Films, in: Proc. E-MRS 1999 Spring Meeting, Strasbourg 1999, O-PS 3/P19.

Y. Diawara, R.D. Durst, V. Valdna. Improved X-ray Phosphors for CCD-based Detectors, in: ACA Reports, Arlington, Virginia, July 18-23, 1998, P022.

J. Hiie, V. Valdna, E. Mellikov, M. Altosaar. Photoconductivity formation in CdTe in the annealing process, in: Optical Organic and Semiconductor Inorcanic Materials, Edgar A. Silinsh, Arthur Medvid, Andrejs R. Lusis, Andris O. Ozols, Editors, Proc. SPIE 2968, 123 (1997).

J. Krustok, H. Collan, K. Hjelt, J. Mädasson, V. Valdna. Photoluminescence from deep acceptor - deep donor complexes in CdTe, Journal of Luminescence, 72-74 (1997) 103.

V. Valdna. Complex defects in Cl doped ZnTe and CdTe, in: Mat. Res. Soc. Symp. Proc. Vol. 442 (1997) 585-591.

V. Valdna. Effect of the Vacuum Annealing on p-type CdTe, Physica Scripta, Vol. T69 (1997) 315-318.

V. Valdna, E. Mellikov and A. Mere. Photoluminescence of Zn(SeTe) Annealed Phosphors, Physica Scripta, Vol. T69 (1997) 312-314.

V. Valdna, J. Hiie, E. Mellikov and A. Mere. (ZnCd)S, (ZnCd)Se and Zn(SeTe) Downconverting Phosphors, Physica Scripta, Vol. T69 (1997) 319-320.

V. Valdna, T. Gavrish, J. Hiie, E. Mellikov and A. Mere. Group II-VI downconverting phosphors, in: Mat. Res. Soc. Symp. Proc. Vol. 450 (1997) 463-466

J. Krustok, V. Valdna, K. Hjelt, H. Collan. Deep center luminescence in p-type CdTe, J. Appl. Phys., 80, N3 (1996) 1757-1762.

K. Hjelt, H. Collan, J. Krustok and V. Valdna. Photoluminescence study of the 1.1 eV deep emission band in p-type CdTe, in: Proc. of the XXX Annual Conference of the Finnish Physical Society, Espoo, Finland, March 21-23, 1996, 8.29.

V.Valdna, F.Buschmann and E.Mellikov. Conductivity Conversion in CdTe Layers. J. Crystal Growth 161 (1996) 164-167.

V.Valdna, J.Hiie, U.Kallavus, A.Mere and T.Piibe. ZnSe1-xTex Solid Solutions. J. Crystal Growth 161 (1996) 177-180.

viimati muudetud: 26.09.2005

Curriculum Vitae (CV)
1.First Name Vello
2.Surname Valdna
3.Institution Tallinn University of Technology, Department of Materials Science
4.Position Senior researcher
5.Date of birth 05.11.1937 (day.month.year)
6.Education Tallinn Institute of Technology 1963 Power engineer
Ural Science Centre, Inst. of Chemistry 1984 Ph D (technology of semiconductor materials)
7.Research and
professional experience
1963-1966 Tallinn Department of Giprorybflot, designer
1967-1969 Tallinn Institute of Technology, doctora student
1970-1992 Tallinn Institute of Technology, senior researcher, chief researcher
1993-2005 Tallinn University of Technology, senior researcher
8.Academic degree Ph D
9.Dates and sites of
earning the degrees
Ural Science Centre, Institute of Chemistry, 1984
10.Honours/awards 1985 Science Award of Soviet Estonia
1998 Science Award of Republic of Estonia
11.Research-administrative
experience
Materials Research Society
Estonian Physical Society
Estonian Chemical Society
12.Supervised dissertations
13.Current research program Synthesis and investigation of the defect composition of group II-VI, III-VI and IV-VI semiconductor materials; development of the luminescence materials, radiation detectors and solar cells based on these compounds.
14.Current grant funding 2003-06, ESF grant 5604, Phase Equilibrium in Cd-Te-O-Cl Systems and Development of PV Solar Cell Materials, performer (principal performer J. Hiie).

1997-05, Development Agreement Between TTU and Bruker AXS, Inc., TTU contract V49, principal performer V. Valdna.
15.List of most important publications

Z.T. Kang, H. Menkara, B.K. Wagner, C.J. Summers, and V. Valdna. Synthesis and characterization of oxygen doped ZnTe for powder phosphor application, JMR, 20 (2005) 2510-2515.

V. Valdna. Optoelectronic properties of chlorine and oxygen doped CdTe thin films, Solar Energy Materials & Solar Cells, 87 (2005) 369-373.

J. Hiie, V. Valdna, J. Kois, M. Danilson, and V. Mikli. Chemistry of CdCl2:O2 Flux for CdTe Solar Cell Technology, Proc. 19th EPVSECE, Paris, 7-11 June 2004, Vol. II, 1929-1931.

Y. Diawara, R.D. Durst, G. Mednikova, T. Thorson, J. Hiie, V. Valdna. Scintillators for high efficiency and high spatial resolution in x-ray imaging applications, Proceedings of SPIE (2004), Vol. 5198 (Hard X-Ray And Gamma-Ray Detector Physics V), 119-125.

J. Hiie, V. Valdna and A. Taklaja. Modeling of Flux Composition for Thermal CdCl2:O2 Annealing of Polycrystalline CdTe, in: Mat. Res. Soc. Symp. Proc. Vol. 763 (2003) 397-402.

V. Valdna and J. Hiie. Efficiency Limits of CdTe Thin Film Solar Cells, Proceedings of the 17th European PVSE Conference, Munich, Germany 2002, 1233-1235.

V. Valdna and R.D. Durst. High efficiency polycrystalline phosphors and method of making same, US Patent Application No 09/313,565 filed May 14, 1999. European Patent Office Application No. 99113410.7-2102 filed 12.07.99. US Patent 6,254,806 B1, granted on July 3, 2001.

V. Valdna. Influence of Copper and Oxygen on the Optoelectronic Properties of Chlorine Doped CdTe Thin Films, Thin Solid Films, 387 (2001) 192-194.

V. Valdna, J. Hiie and A. Gavrilov. Defects in Chlorine Doped CdTe Thin Films, in: Polycrystalline Semiconductors VI – Bulk Materials, Thin Films, and Devices, O. Bonnaud, T. Mohammed-Brahim, H.P. Strunk, J.H. Werner, eds., in Series `Solid State Phenomena` Vols. 80-81, Scitech Publ., Uettikon am See, Switzerland 2001, 155-160.

V. Valdna. Stability of Chlorine-based Complex Defects in Group II-VI Semiconductors, Physica B: Physics of Condensed Matter, 308-310 (2001) 939-941.

J. Hiie and V. Valdna. Control of p-type Conductivity in CdTe by CdCl2 Vapor Phase Treatment, in: Proc. EUROMAT´99 Vol. 13, Functional Materials, Eds.: K. Grassie, E. Tenckhoff, G. Wegner, J. Hausselt and H. Hanselka, Wiley-VCH, Weinheim 2000, 261-266.

V. Valdna. Defects in CdTe-Based Photodetectors, in: Mat. Res. Soc. Symp. Proc. Vol. 607, Infrared Applications of Semiconductors III, Eds.: M. O. Manasreh, B. J. H. Stadler, I. Ferguson and Yong-Hang Zhang, Warrendale, Pennsylvania 2000, 241-246.

V. Valdna. Optoelectronic Properties of CdTe Thin Films, in: Proc. EUROMAT´99 Vol. 9, Interface Controlled Materials, Eds.: M. Rühle and H. Gleiter, Wiley-VCH, Weinheim 2000, 89-95.

V. Valdna, R. Durst and A. Mere. Experimental Studies of ZnS-based Phosphors, in: Proc. EUROMAT´99 Vol. 13, Functional Materials, Eds.: K. Grassie, E. Tenckhoff, G. Wegner, J. Hausselt and H. Hanselka, Wiley-VCH, Weinheim 2000, 117-120.

V. Valdna, R. Durst, J. Hiie, L. Jones and U. Kallavus. Complex Defects in ZnSe-based Phosphors, in: Proc. EUROMAT´99 Vol. 13, Functional Materials, Eds.: K. Grassie, E. Tenckhoff, G. Wegner, J. Hausselt and H. Hanselka, Wiley-VCH, Weinheim 2000, 112-116.

J. Hiie and V.Valdna. Annealing of Bulk Crystalline CdTe under CdCl2 Controlled Vapor Pressure, in: Proc. E-MRS 1999 Spring Meeting, Strasbourg 1999, O-PS 3/P16.

V. Valdna. p-Type Doping of CdTe, in: Polycrystalline Semiconductors V – Bulk Materials, Thin Films, and Devices, J.H. Werner, H.P. Strunk, H.W. Schock eds., in Series `Solid State Phenomena` Vols. 67-68, Scitech Publ., Uettikon am See, Switzerland 1999, 309-314.

V. Valdna. Stability of p-Type CdTe Thin Films, in: Proc. E-MRS 1999 Spring Meeting, Strasbourg 1999, O-PS 3/P19.

Y. Diawara, R.D. Durst, V. Valdna. Improved X-ray Phosphors for CCD-based Detectors, in: ACA Reports, Arlington, Virginia, July 18-23, 1998, P022.

J. Hiie, V. Valdna, E. Mellikov, M. Altosaar. Photoconductivity formation in CdTe in the annealing process, in: Optical Organic and Semiconductor Inorcanic Materials, Edgar A. Silinsh, Arthur Medvid, Andrejs R. Lusis, Andris O. Ozols, Editors, Proc. SPIE 2968, 123 (1997).

J. Krustok, H. Collan, K. Hjelt, J. Mädasson, V. Valdna. Photoluminescence from deep acceptor - deep donor complexes in CdTe, Journal of Luminescence, 72-74 (1997) 103.

V. Valdna. Complex defects in Cl doped ZnTe and CdTe, in: Mat. Res. Soc. Symp. Proc. Vol. 442 (1997) 585-591.

V. Valdna. Effect of the Vacuum Annealing on p-type CdTe, Physica Scripta, Vol. T69 (1997) 315-318.

V. Valdna, E. Mellikov and A. Mere. Photoluminescence of Zn(SeTe) Annealed Phosphors, Physica Scripta, Vol. T69 (1997) 312-314.

V. Valdna, J. Hiie, E. Mellikov and A. Mere. (ZnCd)S, (ZnCd)Se and Zn(SeTe) Downconverting Phosphors, Physica Scripta, Vol. T69 (1997) 319-320.

V. Valdna, T. Gavrish, J. Hiie, E. Mellikov and A. Mere. Group II-VI downconverting phosphors, in: Mat. Res. Soc. Symp. Proc. Vol. 450 (1997) 463-466

J. Krustok, V. Valdna, K. Hjelt, H. Collan. Deep center luminescence in p-type CdTe, J. Appl. Phys., 80, N3 (1996) 1757-1762.

K. Hjelt, H. Collan, J. Krustok and V. Valdna. Photoluminescence study of the 1.1 eV deep emission band in p-type CdTe, in: Proc. of the XXX Annual Conference of the Finnish Physical Society, Espoo, Finland, March 21-23, 1996, 8.29.

V.Valdna, F.Buschmann and E.Mellikov. Conductivity Conversion in CdTe Layers. J. Crystal Growth 161 (1996) 164-167.

V.Valdna, J.Hiie, U.Kallavus, A.Mere and T.Piibe. ZnSe1-xTex Solid Solutions. J. Crystal Growth 161 (1996) 177-180.

last updated: 26.09.2005

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