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| Elulookirjeldus (CV) | ||
| 1. | Eesnimi | Enn |
| 2. | Perekonnanimi | Velmre |
| 3. | Töökoht | Tallinna Tehnikaülikool (TTÜ), infotehnoloogia teaduskond, elektroonikainstituudi rakenduselektroonika õppetool |
| 4. | Ametikoht | Tahkiselektroonika professor |
| 5. | Sünniaeg | 17.08.1937 (päev.kuu.aasta) |
| 6. | Haridus | – Mittestatsionaarne aspirantuur, Leningradi Elektrotehnika Instituut (LETI), 1962-66 – Kõrgkoolikursus, Tallinna Polütehniline Instituut (TPI), 1955-1960 |
| 7. | Teenistuskäik | – professor, TTÜ elektroonikainst., 1996- – külalisprof., Turu Ülikool (Soome), 1996 – dotsent, TTÜ elektroonikainst., 1992-1996 – külalisuurija, Uppsala Ülikool (Rootsi), 1994, 1995 – külalisprof., Uppsala Ülikool (Rootsi), 1992, 1993 – külalisuurija, Silvaco Int., Santa Clara (USA), 1990, 1991 – dotsent, TTÜ elektroonika kateeder, 1976-1992 – dotsent, TTÜ elektroonika kat. juhataja, 1983-1986 – Rootsi Instituudi stipendiaat, Uppsala Ülikool (Rootsi), 1975/76 – van.õp. ja dots.kt., TTÜ elektroonika kat., 1970-1976 – ins., v.-teadur, grupijuht ja lab. juhataja,Tallinna Elektrotehnika Instituut, 1959-1970 |
| 8. | Teaduskraad | – tehnikadoktor – tehnikakandidaat |
| 9. | Teaduskraadi välja andnud asutus, aasta |
– TTÜ, 1996 – LETI, 1970 |
| 10. | Tunnustused | – TTÜ teenetemedal "Mente et Manu", 1997 – TTÜ kuldmärk, 1995 – ENSV Ministrite Nõukogu teadus- ja tehnikapreemia, 1989 – NSVL Rahvamajandussaavutuste Näituse hõbemedal, 1968 |
| 11. | Teadusorganisatsiooniline ja –administratiivne tegevus |
- Pooljuhtseadiste modelleerimise ja numbrilise simuleerimise uurimisrühma juht, 1973- - TTÜ uurimissuuna "Jõu-pooljuhtelektroonika seadised ja seadmed" juht ja üle kümne lepingulise uurimistöö vastutav täitja, 1976-1992 - Eesti Standardikeskuse Nanotehnoloogia tehnilise komitee esimees, 2005- – Elektri- ja Elektroonikainseneride Instituudi liige (IEEE), 1996- – New Yorgi Teaduste Akadeemia (NYAS)liige, 1995- – Eesti Teadlaste Liidu liige 1992- (Volikogu liige, 1998-2004) |
| 12. | Juhendamisel kaitstud väitekirjad |
Milko Milatskov, MSc, 2003, juh. Enn Velmre. Modelling of the Seebeck coefficient. Tallinna Tehnikaülikool Andres Udal, PhD, 1998, juh. Enn Velmre. Development of Numerical Semiconductor Device Models and their Application in Device Theory and Design. Tallinna Tehnikaülikool Ivar Nurste, MSc, 1993, juh. Enn Velmre. Jõupooljuhtseadiste löökvoolureziimi numbriline simuleerimine. Tallinna Tehnikaülikool Andres Udal, MSc, 1992, juh. Enn Velmre. Jõupooljuhtseadiste numbriliste mudelite väljatöötamine ja rakendamine. Tallinna Tehnikaülikool |
| 13. | Teadustöö põhisuunad | – Pooljuhtide ja pooljuhtseadiste teooria – Räni ja laia keelutsooniga pooljuhtmaterjalide (ränikarbiid, galliumnitriid, teemant) füüsikalis-matemaatiline modelleerimine – Pooljuhtstruktuuride numbriline simuleerimine |
| 14. | Jooksvad grandid | ETF projekti 5911 "Anisotroopsete elektriliste ja termoelektriliste mudelite ning seadisesimulaatorite väljatöötamine perspektiivsetele laia keelutsooniga pooljuhtidele SiC ja GaN" (2004-2006) põhitäitja. |
| 15. | Teaduspublikatsioonid |
Velmre E., Udal A., & Klopov M. (2005). Modeling of Photon Recycling in GaN-Devices. Material Science Forum, 483-485, 1039-1042. Klopov M., Kuusk A., Velmre E., & Udal A. (2004). Ab Initio Study of GaN Properties Using VASP Software Package. Proc. of the 9th Baltic Electronics Conf. BEC2004 (Tallinn, Oct.3-6, 2004), pp. 55-58. Velmre E., & Udal A. (2004). Comparison of Photon Recycling Effect in GaAs and GaN Structures. Proc. Estonian Acad. Sci. Eng., 10(3), 157-172. Velmre E., Udal A., & Grivickas, V. (2004). High Phonon-Drag Thermoelectric Efficiency of SiC at Low Temperatures. Material Science Forum, 457-460, 693-696. Velmre E., Udal A., & Verbitski I. (2004). Study of Radiative Recombination Influence in GaN and GaAs Bipolar Transistor Structures. Proc. of the 9th Baltic Electronics Conf. BEC2004 (Tallinn, Oct.3-6, 2004), pp. 59-62. Bikbajevas V., Grivickas V., Stolzer M., Velmre E., Udal A., Grivickas P., Syvajarvi M., & Yakimova R. (2003). Impact of Phonon Drag Effect on Seebeck Coefficient in p-6H- SiC: Experiment and Simulation. Material Science Forum, 433-436, 407-410. Velmre E., & Udal A. (2003). Modeling of Lattice Heat Conductivity and Thermopower in SiC Considering the Four-Phonon Scattering Processes. Material Science Forum, 433-436, 391-394. Grivickas V., Stolzer M., Velmre E., Udal A., Grivickas P., Syvajarvi M., Yakimova R., & Bikbajevas V. (2001). Thermopower Measurements in 4H-SiC and Theoretical Calculations Considering the Phonon Drag Effect. Material Science Forum, 353-356, 491-494. Udal A., & Velmre E. (2000). Measurement of Charge Carrier Lifetime Temperature-Dependence in 4H-SiC Power Diodes. Material Science Forum, 338-342, 781-784. Velmre E., & Udal A. (2000). A Theoretical Study of Electron Drift Mobility Anisotropy in n-Type 4H- and 6H-SiC. Material Science Forum, 338-342, 725-728. Velmre E., & Udal A. (2000). Modelling of Charge Carrier Nonisothermal Transport in Silicon and Silicon Carbide. Proc. Estonian Acad. Sci. Eng., 6(2), 144-154. Velmre E., & Udal A. (1999). Corrected Accounting of Electron-Hole Scattering in Cross-Term Current Equations for Si and SiC. Physica Scripta, T79, 193-197. Udal A., & Velmre E. (1997). SiC-Diodes Forward Surge Current Failure Mechanisms: Experiment and Simulation. Microelectronics and Reliability, 37(10-11), 1671-1674. Velmre E., Udal A., Kocsis T., & Masszi F. (1994). A Theoretically Accurate Mobility Model for Semiconductor Drift-diffusion Simulation. Physica Scripta, T54, 263-267 Velmre E., & Freidin B. (1979). Numerical Analysis of Forward-Biased Diode Structures Based on Direct-Gap Semiconductors. Electronics Letters, 15(13), 383-385. Freidin B., & Velmre E. (1978). Numerical Simulation of a Forward-Biased P-I-N Structure with Band-to-Band Auger Recombination. Electronics Letters, 14(22), 701-703. |
viimati muudetud: 29.09.2005
| Curriculum Vitae (CV) | ||
| 1. | First Name | Enn |
| 2. | Surname | Velmre |
| 3. | Institution | Tallinn University of Technology (TUT), Faculty of Information Technology, Dept of Applied Electronics, Chair of Applied Electronics |
| 4. | Position | Professor of Solid State Electronics |
| 5. | Date of birth | 17.08.1937 (day.month.year) |
| 6. | Education | – Post-graduate study at Leningrad Electrotechnical Institute (LETI), 1962-1966 – Diploma Engineer studies at Tallinn Polytechnical Institute (TPI, now TUT), 1955-1960 |
| 7. | Research and professional experience |
– professor , Institute of Electronics, TUT, 1996- – assoc. prof., Institute of Electronics, TUT, 1992-96 – assoc. prof., Head of Chair of Electronics, TUT, 1983-86 – assoc. prof., Chair of Electronics, TUT, 1970-92 – researcher and head of laboratory, Tallinn Electrotechnical Research Institute, 1959-70 – guest professor, Turku University (Finland), 1997 – guest researcher, Uppsala University (Sweden), 1994, 1995 – guest professor, Uppsala University, 1992, 1993 – guest researcher, Silvaco Int., Santa Clara (USA), 1990, 1991 – postdoctoral scholarship holder, Uppsala University, 1975/76 |
| 8. | Academic degree | – Doctor of Sciences (El Eng) – Candidate of Sciences (El Eng) |
| 9. | Dates and sites of earning the degrees |
– TUT, 1996 – LETI, 1970 |
| 10. | Honours/awards | Science and Technology Award of the Council of Ministers of Estonian SSR, 1989 |
| 11. | Research-administrative experience |
– Head of the semiconductor devices modeling and simulation research group at TUT, 1973- – Leader of the TUT research branch "Semiconductor Power Electronics Devices and Equipments" and more than 10 contract works with industrial enterprises and research institutes, 1976-92 - Chairman of the Nanotechnologies Technical Committee of the Estonian Centre of Standardisation, 2005- - IEEE member, 1996- - New York Acad. Sci. member, 1995- - Estonian Union of Scientists member, 1992- (board member 1998-2004) |
| 12. | Supervised dissertations |
Milko Milatskov, MSc, 2003, superv. Enn Velmre. Modelling of the Seebeck coefficient. Tallinna Tehnikaülikool Andres Udal, PhD, 1998, superv. Enn Velmre. Development of Numerical Semiconductor Device Models and their Application in Device Theory and Design. Tallinna Tehnikaülikool Ivar Nurste, MSc, 1993, superv. Enn Velmre. Jõupooljuhtseadiste löökvoolureziimi numbriline simuleerimine. Tallinna Tehnikaülikool Andres Udal, MSc, 1992, superv. Enn Velmre. Jõupooljuhtseadiste numbriliste mudelite väljatöötamine ja rakendamine. Tallinna Tehnikaülikool |
| 13. | Current research program | - Theory of semiconductors and semiconductor devices – Physical models for use in silicon and novel wide band-gap semiconductors (silicon carbide, gallium nitride, diamond) – Device numerical simulation |
| 14. | Current grant funding | ESF Project 5911 "Development of anisotropic electrical and thermoelectric parameter models and device simulators for novel wide band gap semiconductors SiC and GaN" (2004-2006) senior personnel. |
| 15. | List of most important publications |
Velmre E., Udal A., & Klopov M. (2005). Modeling of Photon Recycling in GaN-Devices. Material Science Forum, 483-485, 1039-1042. Klopov M., Kuusk A., Velmre E., & Udal A. (2004). Ab Initio Study of GaN Properties Using VASP Software Package. Proc. of the 9th Baltic Electronics Conf. BEC2004 (Tallinn, Oct.3-6, 2004), pp. 55-58. Velmre E., & Udal A. (2004). Comparison of Photon Recycling Effect in GaAs and GaN Structures. Proc. Estonian Acad. Sci. Eng., 10(3), 157-172. Velmre E., Udal A., & Grivickas, V. (2004). High Phonon-Drag Thermoelectric Efficiency of SiC at Low Temperatures. Material Science Forum, 457-460, 693-696. Velmre E., Udal A., & Verbitski I. (2004). Study of Radiative Recombination Influence in GaN and GaAs Bipolar Transistor Structures. Proc. of the 9th Baltic Electronics Conf. BEC2004 (Tallinn, Oct.3-6, 2004), pp. 59-62. Bikbajevas V., Grivickas V., Stolzer M., Velmre E., Udal A., Grivickas P., Syvajarvi M., & Yakimova R. (2003). Impact of Phonon Drag Effect on Seebeck Coefficient in p-6H- SiC: Experiment and Simulation. Material Science Forum, 433-436, 407-410. Velmre E., & Udal A. (2003). Modeling of Lattice Heat Conductivity and Thermopower in SiC Considering the Four-Phonon Scattering Processes. Material Science Forum, 433-436, 391-394. Grivickas V., Stolzer M., Velmre E., Udal A., Grivickas P., Syvajarvi M., Yakimova R., & Bikbajevas V. (2001). Thermopower Measurements in 4H-SiC and Theoretical Calculations Considering the Phonon Drag Effect. Material Science Forum, 353-356, 491-494. Udal A., & Velmre E. (2000). Measurement of Charge Carrier Lifetime Temperature-Dependence in 4H-SiC Power Diodes. Material Science Forum, 338-342, 781-784. Velmre E., & Udal A. (2000). A Theoretical Study of Electron Drift Mobility Anisotropy in n-Type 4H- and 6H-SiC. Material Science Forum, 338-342, 725-728. Velmre E., & Udal A. (2000). Modelling of Charge Carrier Nonisothermal Transport in Silicon and Silicon Carbide. Proc. Estonian Acad. Sci. Eng., 6(2), 144-154. Velmre E., & Udal A. (1999). Corrected Accounting of Electron-Hole Scattering in Cross-Term Current Equations for Si and SiC. Physica Scripta, T79, 193-197. Udal A., & Velmre E. (1997). SiC-Diodes Forward Surge Current Failure Mechanisms: Experiment and Simulation. Microelectronics and Reliability, 37(10-11), 1671-1674. Velmre E., Udal A., Kocsis T., & Masszi F. (1994). A Theoretically Accurate Mobility Model for Semiconductor Drift-diffusion Simulation. Physica Scripta, T54, 263-267 Velmre E., & Freidin B. (1979). Numerical Analysis of Forward-Biased Diode Structures Based on Direct-Gap Semiconductors. Electronics Letters, 15(13), 383-385. Freidin B., & Velmre E. (1978). Numerical Simulation of a Forward-Biased P-I-N Structure with Band-to-Band Auger Recombination. Electronics Letters, 14(22), 701-703. |
last updated: 29.09.2005
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