[ sulge aken ]

Elulookirjeldus (CV)
1.Eesnimi Kaupo
2.Perekonnanimi Kukli
3.Töökoht Tartu Ülikool, Eksperimentaalfüüsika ja tehnoloogia instituut
4.Ametikoht vanemteadur
5.Sünniaeg 22.12.1967 (päev.kuu.aasta)
6.Haridus kõrgem
7.Teenistuskäik 1992-1999 doktorant Tartu Ülikoolis;
1996-1997 teadur Helsinki Tehnikaülikoolis;
1998-2001 erakorraline teadur Tartu Ülikoolis, külalisteadur Helsinki Ülikoolis;
alates aastast 2001 vanemteadur Tartu Ülikoolis, külalisteadur (post-doc) Helsinki Ülikoolis
8.Teaduskraad filosoofiadoktor (füüsikas)
9.Teaduskraadi välja
andnud asutus, aasta		 Tartu Ülikool, 1999
10.Tunnustused Soome Vabariigi grant VIRO-75, 1993
11.Teadusorganisatsiooniline
ja –administratiivne
tegevus		 Osalenud sümpoosiumide korraldamisel, projektitööde organiseerimisel ja teaduspublikatsioonide eelrefereerimisprotsessis.
12.Juhendamisel kaitstud
väitekirjad
13.Teadustöö põhisuunad Nanostruktureeritud tahkiskilede kasv, faasikoostis ja elektrilised omadused. Metalloksiidide ja nende kombinatsioonide aatomkihtsadestus ja -epitaksia.
14.Jooksvad grandid Eesti teadusfondi grandi nr. 5861 (juht A. Rosental) vastutav täitja Tartu Ülikooli Eksperimentaalfüüsika ja tehnoloogia instituudis.
15.Teaduspublikatsioonid

Atomic layer deposition and properties of lanthanum oxide and lanthanum-aluminum oxide films. Kukli, Kaupo; Ritala, Mikko; Pore, Viljami; Leskelä, Markku; Sajavaara, Timo; Hegde, Rama I.; Gilmer, David C.; Tobin, Philip J.; Jones, Anthony C.; Aspinall, Helen C. Chemical Vapor Deposition (2006), 12(2-3), 158-164. Publisher Wiley-VCH Verlag GmbH & Co.

Atomic layer deposition of calcium oxide and calcium hafnium oxide films using calcium cyclopentadienyl precursor. Kukli, Kaupo; Ritala, Mikko; Sajavaara, Timo; Hänninen, Timo; Leskelä, Markku. Thin Solid Films (2006), 500(1-2), 322-329.

Disordered structure and density of gap states in high-permittivity thin solid films, in: Defects in high-k Gate Dielectric Stacks. Kukli, Kaupo; Dueñas, Salvador; Castán, Helena; García, Hector; Barbolla, Juan; Aarik, Jaan; Aidla, Aleks; Ritala, Mikko; Leskelä, Markku; in: Nano-Electronic Semiconductor Devices, Ed. E. Gusev. NATO Science Series II. Mathematics, Physics and Chemistry – Vol. 220, Springer 2006, Netherlands. pp. 123-134.

Effect of preparation conditions on properties of atomic layer deposited TiO2 films in Mo-TiO2-Al stacks. Jõgi, Indrek; Aarik, Jaan; Laan, Matti; Lu, Jun; Kukli, Kaupo; Käämbre, Henn; Sajavaara, Timo; Uustare, Teet. Thin Solid Films (2006) In press. Available online 25 January 2006 via www.sciencedirect.com

Electrical defects in atomic layer deposited HfO2 films on silicon: Influence of precursor chemistries and substrate treatment. Dueñas, Salvador; Castán, Helena; García, Hector; Bailón, Luis; Kukli, Kaupo; Ritala, Mikko; Leskelä, Markku; in: Nano-Electronic Semiconductor Devices, Ed. E. Gusev. NATO Science Series II. Mathematics, Physics and Chemistry – Vol. 220, Springer 2006, Netherlands. pp. 287-298.

HfO2 films grown by ALD using cyclopentadienyl-type precursors and H2O or O3 as oxygen source. Niinistö, Jaakko; Putkonen, Matti; Niinistö, Lauri; Arstila, Kai; Sajavaara, Timo; Lu, Jun; Kukli, Kaupo; Ritala, Mikko; Leskelä, Markku, Journal of The Electrochemical Society (2006) 153(3), F39-F45. Publisher: Electrochemical Society.

High-permittivity YScO3 thin films by atomic layer deposition using two precursor approaches. Myllymäki, Pia; Nieminen, Minna; Niinistö, Jaakko; Putkonen, Matti; Kukli, Kaupo; Niinistö, Lauri, Journal of Materials Chemistry (2006) 16(6), 563-569. Publisher: Royal Society of Chemistry.

Influence of single and double deposition temperatures on the interface quality of atomic layer deposited Al2O3 dielectric thin films on silicon. Dueñas, S.; Castán, H.; García, H.; de Castro, A.; Bailón, L.; Kukli, K.; Aidla, A.; Aarik, J.; Mändar, H.; Uustare, T.; Lu, J.; Hårsta, A.; Journal of Applied Physics (2006) 99(5), 054902 (8 pages). Publisher: American Institute of Physics.

Rare-earth oxide thin films for gate dielectrics in microelectronics. Leskelä, Markku; Kukli, Kaupo; Ritala, Mikko. Journal of Alloys and Compounds (2006) In press. Available online 15 December 2005 via www.sciencedirect.com

A comparative study of the electrical properties of TiO2 films grown by high-pressure reactive sputtering and atomic layer deposition. Dueñas, S.; Castán, H.; García, H.; San Andrés, E.; Toledano-Luque, M.; Mártil, I.; González-Díaz, G.; Kukli, K.; Uustare, T.; Aarik, J. Semiconductor Science and Technology (2005), 20, 1044-1051. Publisher: Institute of Physics and IOP Publishing Ltd.

Analytical TEM characterization of the interfacial layer between ALD HfO2 film and silicon substrate. Lu, J.; Aarik, J.; Sundqvist, J.; Kukli, K.; Hårsta, A.; Carlsson, J.-O. Journal of Crystal Growth (2005), 273(3-4), 510-514. Publisher: Elsevier B.V.

Atomic Layer Deposition and Characterization of HfO2 Films on Noble Metal Film Substrates. Kukli, Kaupo; Aaltonen, Titta; Aarik, Jaan; Lu, Jun; Ritala, Mikko; Ferrari, Sandro; Harsta, Anders; Leskelä, Markku. Journal of the Electrochemical Society (2005), 152(7), F75-F82. Publisher: Electrochemical Society.

Atomic layer deposition of dielectric Nb2O5 films using the NbI5-O2 precursor combination. Rooth, Mårten; Kukli, Kaupo; Hårsta, Anders. Proceedings - Electrochemical Society (2005), 2005-09, 598-604.

Atomic layer deposition of hafnium dioxide thin films from hafnium tetrakis(dimethylamide) and water. Kukli, Kaupo; Pilvi, Tero; Ritala, Mikko; Sajavaara, Timo; Lu, Jun; Leskelä, Markku. Thin Solid Films (2005), 491(1-2), 328-338. Publisher: Elsevier B.V.

Atomic layer deposition rate, phase composition and performance of HfO2 films on noble metal and alkoxylated silicon substrates. Kukli, Kaupo; Ritala, Mikko; Pilvi, Tero; Aaltonen, Titta; Aarik, Jaan; Lautala, Markus; Leskelä, Markku. Materials Science & Engineering, B: Solid-State Materials for Advanced Technology (2005), B118(1-3), 112-116. Publisher: Elsevier B.V.

Comparative study on electrical properties of atomic layer deposited high-permittivity materials on silicon substrates. Dueñas, S.; Castán, H.; García, H.; Barbolla, J.; Kukli, K.; Ritala, M.; Leskelä, M. Thin Solid Films (2005), 474(1-2), 222-229. Publisher: Elsevier B.V.

Controlled growth of HfO2 thin films by atomic layer deposition from cyclopentadienyl-type precursor and water. Niinistö, Jaakko; Putkonen, Matti; Niinistö, Lauri; Stoll, Sarah L.; Kukli, Kaupo; Sajavaara, Timo; Ritala, Mikko; Leskelä, Markku. Journal of Materials Chemistry (2005), 15(23), 2271-2275. Publisher: Royal Society of Chemistry.

Dry-Etched Silicon-on-Insulator Waveguides With Low Propagation and Fiber-Coupling Losses. Solehmainen, Kimmo; Aalto, Timo; Dekker, James; Kapulainen, Markku; Harjanne, Mikko; Kukli, Kaupo; Heimala, Päivi; Kolari, Kai; Leskelä, Markku; Journal of Lightwave Technology (2005), 23, 3875-3880. Publisher: IEEE/Optical Society of America.

Effect of selected atomic layer deposition parameters on the structure and dielectric properties of hafnium oxide films. [Erratum to document cited in CA142:103963]. Kukli, Kaupo; Aarik, Jaan; Ritala, Mikko; Uustare, Teet; Sajavaara, Timo; Lu, Jun; Sundqvist, Jonas; Aidla, Aleks; Pung, Lembit; Hårsta, Anders; Leskelä, Markku. Journal of Applied Physics (2005), 97(9), 099903/1. Publisher: American Institute of Physics.

Engineering structure and properties of hafnium oxide films by atomic layer deposition temperature. Kukli, Kaupo; Aarik, Jaan; Uustare, Teet; Lu, Jun; Ritala, Mikko; Aidla, Aleks; Pung, Lembit; Hårsta, Anders; Leskelä, Markku; Kikas, Arvo; Sammelselg, Väino. Thin Solid Films (2005), 479(1-2), 1-11. Publisher: Elsevier B.V.

High Growth Rate of Erbium Oxide Thin Films in Atomic Layer Deposition from (CpMe)3Er and Water Precursors. Päiväsaari, J.; Niinistö, J.; Arstila, K.; Kukli, K.; Putkonen, M.; Niinistö, L. Chemical Vapor Deposition (2005), 11, 415-419. Publisher: Wiley-VCH Verlag GmbH & Co.

Recent developments in the MOCVD and ALD of rare earth oxides and silicates. Jones, Anthony C.; Aspinall, Helen C.; Chalker, Paul R.; Potter, Richard J.; Kukli, Kaupo; Rahtu, Antti; Ritala, Mikko; Leskelä, Markku. Materials Science & Engineering, B: Solid-State Materials for Advanced Technology (2005), B118(1-3), 97-104. Publisher: Elsevier B.V.

The effect of precursors to the structure and conductivity of atomic layer deposited titania. Jõgi, Indrek; Aarik, Jaan; Kaupo Kukli, Kaupo; Käämbre, Henn; Laan, Matti; Uustare, Teet. Proceedings - Electrochemical Society (2005), 2005-09, 575-582.

The electrical-interface quality of as-grown atomic-layer-deposited disordered HfO2 on p- and n-type silicon. Duenas, S.; Castan, H.; Garcia, H.; Barbolla, J.; Kukli, K.; Aarik, J.; Aidla, A. Semiconductor Science and Technology (2004), 19(9), 1141-1148. Publisher: Institute of Physics Publishing.

Atomic layer deposition of hafnium dioxide films from hafnium hydroxylamide and water. Kukli, Kaupo; Ritala, Mikko; Leskelä, Markku; Sajavaara, Timo; Keinonen, Juhani; Jones, Anthony C.; Tobin, Neil L. Chemical Vapor Deposition (2004), 10(2), 91-96. Publisher: Wiley-VCH Verlag GmbH & Co.

Crystallization in hafnia- and zirconia-based systems. Ushakov, S. V.; Navrotsky, A.; Yang, Y.; Stemmer, S.; Kukli, K.; Ritala, M.; Leskelä, M. A.; Fejes, P.; Demkov, A.; Wang, C.; Nguyen, B.-Y.; Triyoso, D.; Tobin, P. Physica Status Solidi B: Basic Research (2004), 241(10), 2268-2278. Publisher: Wiley-VCH Verlag GmbH.

Dielectric Permittivity and Intercalation Parameters of Li Ion Intercalated Atomic Layer Deposited ZrO2. Jonsson, A. K.; Niklasson, G. A.; Ritala, Mikko; Leskelä, Markku; Kukli, Kaupo. Journal of the Electrochemical Society (2004), 151(3), F54-F58. Publisher: Electrochemical Society.

Effect of growth temperature and postmetallization annealing on the interface and dielectric quality of atomic layer deposited HfO2 on p and n silicon. Dueñas, S.; Castán, H.; García,, H.; Barbolla, J.; Kukli, K.; Aarik, J. Journal of Applied Physics (2004), 96(3), 1365-1372. Publisher: American Institute of Physics.

Effect of selected atomic layer deposition parameters on the structure and dielectric properties of hafnium oxide films. Kukli, Kaupo; Aarik, Jaan; Ritala, Mikko; Uustare, Teet; Sajavaara, Timo; Lu, Jun; Sundqvist, Jonas; Aidla, Aleks; Pung, Lembit; Hårsta, Anders; Leskelä, Markku. Journal of Applied Physics (2004), 96(9), 5298-5307. Publisher: American Institute of Physics.

Electrical characterization of hafnium oxide and hafnium-rich silicate films grown by atomic layer deposition. Dueñas, S.; Castán, H.; García, H.; Barbolla, J.; Kukli, K.; Aarik, J.; Ritala, M.; Leskelä, M. Microelectronics Reliability (2004), Volume Date 2005, 45(5-6), 949-952. Publisher: Elsevier Ltd.

Evaluation of a Praseodymium Precursor for Atomic Layer Deposition of Oxide Dielectric Films. Kukli, Kaupo; Ritala, Mikko; Pilvi, Tero; Sajavaara, Timo; Leskelä, Markku; Jones, Anthony C.; Aspinall, Helen C.; Gilmer, David C.; Tobin, Philip J. Chemistry of Materials (2004), 16(24), 5162-5168. Publisher: American Chemical Society.

Hafnium silicon oxide films prepared by atomic layer deposition. Kukli, Kaupo; Ritala, Mikko; Leskela, Markku; Sajavaara, Timo; Keinonen, Juhani; Gilmer, David C.; Tobin, Philip J. Materials Science & Engineering, B: Solid-State Materials for Advanced Technology (2004), B109(1-3), 2-5. Publisher: Elsevier Science B.V.

On the interface quality of MIS structures fabricated from atomic layer deposition of HfO2, Ta2O5 and Nb2O5-Ta2O5-Nb2O5 dielectric thin films. Dueñas, S.; Castán, H.; García, H.; Barbolla, J.; Kukli, K.; Ritala, M.; Leskelä, M. Materials Research Society Symposium Proceedings (2004), 786(Fundamentals of Novel Oxide/Semiconductor Interfaces), 147-152. Publisher: Materials Research Society.

Properties of HfO2 Thin Films Grown by ALD from Hafnium tetrakis(ethylmethylamide) and Water. Kukli, Kaupo; Ritala, Mikko; Lu, Jun; Hårsta, Anders; Leskelä, Markku. Journal of the Electrochemical Society (2004), 151(8), F189-F193. Publisher: Electrochemical Society.

Properties of Oxide Film Atomic Layer Deposited from Tetraethoxy Silane, Hafnium Halides, and Water. Kukli, Kaupo; Ritala, Mikko; Leskelä, Markku; Sajavaara, Timo; Keinonen, Juhani; Hegde, Rama I.; Gilmer, David C.; Tobin, Philip J. Journal of the Electrochemical Society (2004), 151(5), F98-F104. Publisher: Electrochemical Society.

Some recent developments in the MOCVD and ALD of high-k dielectric oxides. Jones, Anthony C.; Aspinall, Helen C.; Chalker, Paul R.; Potter, Richard J.; Kukli, Kaupo; Rahtu, Antti; Ritala, Mikko; Leskelä, Markku. Journal of Materials Chemistry (2004), 14(21), 3101-3112. Publisher: Royal Society of Chemistry.

Structural and dielectric properties of thin ZrO2 films on silicon grown by atomic layer deposition from cyclopentadienyl precursor. Niinistö, J.; Putkonen, M.; Niinistö, L.; Kukli, K.; Ritala, M.; Leskelä, M. Journal of Applied Physics (2004), 95(1), 84-91. Publisher: American Institute of Physics.

Thin film nanolaminate analysis by simultaneous heavy ion recoil and X-ray spectrometry. Harjunmaa, A.; Sajavaara, T.; Arstila, K.; Kukli, K.; Keinonen, J. Nuclear Instruments & Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms (2004), 219-220, 773-777. Publisher: Elsevier Science B.V.

Atomic Layer Deposition of Hafnium Dioxide Films from 1-Methoxy-2-methyl-2-propanolate Complex of Hafnium. Kukli, Kaupo; Ritala, Mikko; Leskelä, Markku; Sajavaara, Timo; Keinonen, Juhani; Jones, Anthony C.; Roberts, John L. Chemistry of Materials (2003), 15(8), 1722-1727. Publisher: American Chemical Society.

Atomic layer deposition of hafnium dioxide films using hafnium bis(2-butanolate)bis- (1-methoxy-2-methyl-2-propanolate) and water. Kukli, Kaupo; Ritala, Mikko; Leskelä, Markku; Sajavaara, Timo; Keinonen, Juhani; Jones, Anthony C.; Roberts, John L. Chemical Vapor Deposition (2003), 9(6), 315-320. Publisher: Wiley-VCH Verlag GmbH & Co.

Atomic layer deposition of HfO2 thin films and nanolayered HfO2-Al2O3-Nb2O5 dielectrics. Kukli, Kaupo; Ritala, Mikko; Leskelä, Markku; Sajavaara, Timo; Keinonen, Juhani; Gilmer, David C.; Hegde, Rama; Rai, Raghaw; Prabhu, Lata. Journal of Materials Science: Materials in Electronics (2003), 14(5/6/7), 361-367. Publisher: Kluwer Academic Publishers

Atomic layer deposition of polycrystalline HfO2 films by the HfI4-O2 precursor combination. Sundqvist, J., Hårsta, A., Aarik, J.; Kukli, K., Aidla, A., Thin Solid Films (2003), 427(1-2), 147-151. Publisher: Elsevier.

Conductance transient, capacitance-voltage and deep-level transient spectroscopy characterization of atomic layer deposited hafnium and zirconium oxide thin films. Dueñas, S.; Castán, H.; Barbolla, J.; Kukli, K.; Ritala, M.; Leskela, M. Solid-State Electronics (2003), 47(10), 1623-1629. Publisher: Elsevier Science Ltd.

ZrO2 thin films grown on silicon substrates by atomic layer deposition with Cp2Zr(CH3)2 and water as precursors. Putkonen, Matti; Niinistö, Jaakko; Kukli, Kaupo; Sajavaara, Timo; Karppinen, Maarit; Yamauchi, Hisao; Niinistö, Lauri. Chemical Vapor Deposition (2003), 9(4), 207-212. Publisher: Wiley-VCH Verlag GmbH & Co.

Atomic layer deposition of Al2O3, ZrO2, Ta2O5, and Nb2O5 based nanolayered dielectrics. Kukli, Kaupo; Ritala, Mikko; Leskelä, Markku; Sajavaara, Timo; Keinonen, Juhani; Gilmer, David; Bagchi, Sandeep; Prabhu, Lata. Journal of Non-Crystalline Solids (2002), 303(1), 35-39. Publisher: Elsevier Science B.V.

Atomic layer deposition of hafnium dioxide films from hafnium tetrakis(ethylmethylamide) and water. Kukli, Kaupo; Ritala, Mikko; Sajavaara, Timo; Keinonen, Juhani; Leskelä, Markku. Chemical Vapor Deposition (2002), 8(5), 199-204. Publisher: Wiley-VCH Verlag GmbH & Co.

Atomic layer deposition of TiO2 thin films from TiI4 and H2O. Aarik, Jaan; Aidla, Aleks; Uustare, Teet; Kukli, Kaupo; Sammelselg, Väino; Ritala, Mikko; Leskelä, Markku. Applied Surface Science (2002), 193(1-4), 277-286. Publisher: Elsevier Science B.V.

Comparison of hafnium oxide films grown by atomic layer deposition from iodide and chloride precursors. Kukli, Kaupo; Ritala, Mikko; Sajavaara, Timo; Keinonen, Juhani; Leskelä, Markku. Department of Chemistry, Thin Solid Films (2002), 416(1-2), 72-79. Publisher: Elsevier Science B.V.

Epitaxial growth of TiO2 films in a hydroxyl-free atomic layer deposition process. Schuisky, Mikael; Kukli, Kaupo; Aarik, Jaan; Lu, Jun; Hårsta, Anders. Journal of Crystal Growth (2002), 235(1-4), 293-299. Publisher: Elsevier Science B.V.

Hafnium tetraiodide and oxygen as precursors for atomic layer deposition of hafnium oxide thin films. Aarik, Jaan; Sundqvist, Jonas; Aidla, Aleks; Lu, Jun; Sajavaara, Timo; Kukli, Kaupo; Hårsta, Anders. Thin Solid Films (2002), 418(2), 69-72. Publisher: Elsevier Science B.V.

Influence of growth temperature on properties of zirconium dioxide films grown by atomic layer deposition. Kukli, Kaupo; Ritala, Mikko; Aarik, Jaan; Uustare, Teet; Leskelä, Markku. Journal of Applied Physics (2002), 92(4), 1833-1840. Publisher: American Institute of Physics.

Influence of thickness and growth temperature on the properties of zirconium oxide films grown by atomic layer deposition on silicon. Kukli, Kaupo; Ritala, Mikko; Uustare, Teet; Aarik, Jaan; Forsgren, Katarina; Sajavaara, Timo; Leskelä, Markku; Hårsta, Anders. Thin Solid Films (2002), 410(1-2), 53-60. Publisher: Elsevier Science B.V.

Properties of hafnium oxide films grown by atomic layer deposition from hafnium tetraiodide and oxygen. Kukli, Kaupo; Ritala, Mikko; Sundqvist, Jonas; Aarik, Jaan; Lu, Jun; Sajavaara, Timo; Leskelä, Markku; Hårsta, Anders. Journal of Applied Physics (2002), 92(10), 5698-5703. Publisher: American Institute of Physics.

Atomic layer deposition of zirconium oxide from zirconium tetraiodide, water and hydrogen peroxide. Kukli, K.; Forsgren, K.; Aarik, J.; Uustare, T.; Aidla, A.; Niskanen, A.; Ritala, M.; Leskelä, M.; Hårsta, A. Journal of Crystal Growth (2001), 231(1-2), 262-272.

Atomic layer deposition of zirconium oxide from zirconium tetraiodide, water and hydrogen peroxide. Kukli, K.; Forsgren, K.; Aarik, J.; Uustare, T.; Aidla, A.; Niskanen, A.; Ritala, M.; Leskelä, M.; Hårsta, A. Journal of Crystal Growth (2001), 231(1-2), 262-272. Publisher: Elsevier Science B.V

Atomic layer deposition of tantalum oxide thin films from iodide precursor. Kukli, Kaupo; Aarik, Jaan; Aidla, Aleks; Forsgren, Katarina; Sundqvist, Jonas; Hårsta, Anders; Uustare, Teet; Mändar, Hugo; Kiisler, Alma-Asta. Chemistry of Materials (2001), 13(1), 122-128. Publisher: American Chemical Society.

Atomic Layer Deposition of Thin Films Using O2 as Oxygen Source. Schuisky, Mikael; Aarik, Jaan; Kukli, Kaupo; Aidla, Aleks; Hårsta, Anders. Langmuir (2001), 17(18), 5508-5512. Publisher: American Chemical Society.

Development of dielectric properties of niobium oxide, tantalum oxide, and aluminum oxide based nanolayered materials. Kukli, Kaupo; Ritala, Mikko; Leskelä, Markku. Journal of the Electrochemical Society (2001), 148(2), F35-F41. Publisher: Electrochemical Society.

Dielectric properties of zirconium oxide grown by atomic-layer deposition from iodide precursor. Kukli, Kaupo; Forsgren, Katarina; Ritala, Mikko; Leskelä, Markku; Aarik, Jaan; Hårsta, Anders. Journal of the Electrochemical Society (2001), 148(12), F227-F232. Publisher: Electrochemical Society.

In Situ Mass Spectrometry Study on Atomic Layer Deposition from Metal (Ti, Ta, and Nb) Ethoxides and Water. Rahtu, Antti; Kukli, Kaupo; Ritala, Mikko. Chemistry of Materials (2001), 13(3), 817-823. Publisher: American Chemical Society.

Phase transformations in hafnium dioxide thin films grown by atomic layer deposition at high temperatures. Aarik, J.; Aidla, A.; Mändar, H.; Uustare, T.; Kukli, K.; Schuisky, M. Applied Surface Science (2001), 173(1-2), 15-21. Publisher: Elsevier Science B.V.

(Ta1-xNbx)2O5 films produced by atomic layer deposition: Temperature dependent dielectric spectroscopy and room-temperature I-V characteristics. Strømme, M.; Niklasson, G. A.; Ritala, M.; Leskelä, M.; Kukli, K. Journal of Applied Physics (2001), 90(9), 4532-4542. Publisher: American Institute of Physics.

Atomic layer chemical vapor deposition of TiO2. Low temperature epitaxy of rutile and anatase. Schuisky, Mikael; Hårsta, Anders; Aidla, Aleks; Kukli, Kaupo; Kiisler, Alma-Asta; Aarik, Jaan. Journal of the Electrochemical Society (2000), 147(9), 3319-3325. Publisher: Electrochemical Society.

Atomic layer CVD in the Bi-Ti-O system. Schuisky, Mikael; Kukli, Kaupo; Ritala, Mikko; Harsta, Anders; Leskelä, Markku. Chemical Vapor Deposition (2000), 6(3), 139-145. Publisher: Wiley-VCH Verlag GmbH.

Atomic Layer Deposition and Chemical Vapor Deposition of Tantalum Oxide by Successive and Simultaneous Pulsing of Tantalum Ethoxide and Tantalum Chloride. Kukli, Kaupo; Ritala, Mikko; Leskelä, Markku. Chemistry of Materials (2000), 12(7), 1914-1920. Publisher: American Chemical Society.

Atomic layer deposition of high-k oxides. Ritala, Mikko; Kukli, Kaupo; Vehkamäki, Marko; Hänninen, Timo; Hatanpää, Timo; Räisanen, Petri I.; Leskela, Markku. Proceedings - Electrochemical Society (2000), 2000-13(CVD XV), 597-604. Publisher: Electrochemical Society.

Atomic layer deposition of metal oxide films by using metal alkoxides as an oxygen source. Räisanen, Petri. I.; Kukli, Kaupo; Rahtu, Antti; Ritala, Mikko; Leskelä, Markku. Proceedings - Electrochemical Society (2000), 2000-13(CVD XV), 623-628.

Atomic layer deposition of oxide thin films with metal alkoxides as oxygen sources. Ritala, Mikko; Kukli, Kaupo; Rahtu, Antti; Räisanen, Petri I.; Leskelä, Markku; Sajavaara, Timo; Keinonen, Juhani. Science (2000), 288(5464), 319-321. Publisher: American Association for the Advancement of Science.

Atomic layer deposition of titanium oxide from TiI4 and H2O2. Kukli, Kaupo; Ritala, Mikko; Schuisky, Mikael; Leskelä, Markku; Sajavaara, Timo; Keinonen, Juhani; Uustare, Teet; Hårsta, Anders. Chemical Vapor Deposition (2000), 6(6), 303-310. Publisher: Wiley-VCH Verlag GmbH

Characterisation of Ta2O5 films prepared by ALCVD. Forsgren, Katarina; Sundqvist, Jonas; Hårsta, Anders; Kukli, Kaupo; Aarik, Jaan; Aidla, Aleks. Proceedings - Electrochemical Society (2000), 2000-13(CVD XV), 645-651. Publisher: Electrochemical Society.

Influence of atomic layer deposition parameters on the phase content of Ta2O5 films. Kukli, Kaupo; Ritala, Mikko; Matero, Raija; Leskelä, Markku. Journal of Crystal Growth (2000), 212(3/4), 459-468. Publisher: Elsevier Science B.V.

Low-temperature deposition of zirconium oxide-based nanocrystalline films by alternate supply of Zr[OC(CH3)3]4 and H2O. Kukli, Kaupo; Ritala, Mikko; Leskela, Markku. Chemical Vapor Deposition (2000), 6(6), 297-302. Publisher: Wiley-VCH Verlag GmbH.

Real-Time Monitoring in Atomic Layer Deposition of TiO2 from TiI4 and H2O-H2O2. Kukli, Kaupo; Aidla, Aleks; Aarik, Jaan; Schuisky, Mikael; Hårsta, Anders; Ritala, Mikko; Leskelä, Markku. Langmuir (2000), 16(21), 8122-8128. Publisher: American Chemical Society.

Ultrathin TiO2 films deposited by atomic layer chemical vapor deposition. Schuisky, Mikael; Kukli, Kaupo; Aidla, Aleks; Aarik, Jaan; Ludvigsson, Mikael; Hårsta, Anders. Proceedings - Electrochemical Society (2000), 2000-13(CVD XV), 637-644. Publisher: Electrochemical Society.

Controlled Growth of TaN, Ta3N5, and TaOxNy Thin Films by Atomic Layer Deposition. Ritala, Mikko; Kalsi, Pia; Riihelä, Diana; Kukli, Kaupo; Leskelä, Markku; Jokinen, Janne. Chemistry of Materials (1999), 11(7), 1712-1718. Publisher: American Chemical Society.

Controlled growth of yttrium oxysulphide thin films by atomic layer deposition. Kukli, K.; Peussa, M.; Johansson, L.-S.; Nykänen, E.; Niinistö, L. Materials Science Forum (1999), 315-317(Rare Earths '98), 216-221. Publisher: Trans Tech Publications Ltd.

In situ characterization of atomic layer deposition processes by a mass spectrometer. Ritala, M.; Juppo, M.; Kukli, K.; Rahtu, A.; Leskelä, M. Journal de Physique IV: Proceedings (1999), 9(Pr8, Proceedings of the Twelfth European Conference on Chemical Vapour Deposition, 1999, Vol. 2), 1021-1028. Publisher: EDP Sciences.

Properties of atomic layer deposited (Ta1-xNbx)2O5 solid-solution films and Ta2O5-Nb2O5 nanolaminates. Kukli, Kaupo; Ritala, Mikko; Leskelä, Markku. Journal of Applied Physics (1999), 86(10), 5656-5662. Publisher: American Institute of Physics.

Deposition of lanthanum sulfide thin films by atomic layer epitaxy. Kukli, Kaupo; Heikkinen, Hannele; Nykänen, Erja; Niinistö, Lauri. Journal of Alloys and Compounds (1998), 275-277 10-14. Publisher: Elsevier Science S.A.

Niobium oxide thin films grown by atomic layer epitaxy. Kukli, Kaupo; Ritala, Mikko; Leskelä, Markku; Lappalainen, Reijo. Chemical Vapor Deposition (1998), 4(1), 29-34. Publisher: Wiley-VCH Verlag GmbH.

Atomic layer epitaxy growth of aluminum oxide thin films from a novel Al(CH3)2Cl precursor and H2O. Kukli, Kaupo; Ritala, Mikko; Leskelä, Markku; Jokinen, Janne. Journal of Vacuum Science & Technology, A: Vacuum, Surfaces, and Films (1997), 15(4), 2214-2218. Publisher: American Institute of Physics.

Dielectric oxide nanolaminates deposited by atomic layer epitaxy. Kukli, Kaupo; Ritala, Mikko; Leskelä, Markku. Proceedings - Electrochemical Society (1997), 97-25(Chemical Vapor Deposition), 1137-1144. Publisher: Electrochemical Society.

In situ study of atomic layer epitaxy growth of tantalum oxide thin films from Ta(OC2H5)5 and H2O. Kukli, Kaupo; Aarik, Jaan; Aidla, Aleks; Siimon, Hele; Ritala, Mikko; Leskelä, Markku. Applied Surface Science (1997), 112, 236-242. Publisher: Elsevier.

Properties of (Nb1-xTax)2O5 solid solutions and (Nb1-xTax)2O5-ZrO2 nanolaminates grown by atomic layer epitaxy. Kukli, K.; Ritala, M.; Leskelä, M. Nanostructured Materials (1998), Volume Date 1997, 8(7), 785-793. Publisher: Elsevier Science Inc.

Properties of Ta2O5-based dielectric nanolaminates deposited by atomic layer epitaxy. Kukli, Kaupo; Ihanus, Jarkko; Leskelä, Markku. Journal of the Electrochemical Society (1997), 144(1), 300-306. Publisher: Electrochemical Society.

Mechanisms of suboxide growth and etching in atomic layer deposition of tantalum oxide from TaCl5 and H2O. Aarik, Jaan; Kukli, Kaupo; Aidla, Aleks; Pung, Lembit. Applied Surface Science (1996), 103(4), 331-341. Publisher: Elsevier.

Tailoring the dielectric properties of HfO2-Ta2O5 nanolaminates. Kukli, Kaupo; Ihanus, Jarkko; Ritala, Mikko; Leskelä, Markku. Applied Physics Letters (1996), 68(26), 3737-3739. Publisher: American Institute of Physics.

Atomic layer epitaxy growth of tantalum oxide thin films from Ta(OC2H5)5 and H2O. Kukli, Kaupo; Ritala, Mikko; Leskelä, Markku. Journal of the Electrochemical Society (1995), 142(5), 1670-5. Publisher: Electrochemical Society.

Properties of tantalum oxide thin films grown by atomic layer deposition. Kukli, Kaupo; Aarik, Jaan; Aidla, Aleks; Kohan, Oksana; Uustare, Teet; Sammelselg, Väino. Thin Solid Films (1995), 260(2), 135-42. Publisher: Elsevier.

Deposition and etching of tantalum oxide films in atomic layer epitaxy process. Aarik, Jaan; Aidla, Aleks; Kukli, Kaupo; Uustare, Teet. Journal of Crystal Growth (1994), 144(1/2), 116-19. Publisher: Elsevier.

In situ characterization of ALE growth by reagent pulse delay times in a flow-type reactor. Aarik, J.; Aidla, A.; Kukli, K. Applied Surface Science (1994), 75(1-4), 180-4.

viimati muudetud: 06.10.2005

Curriculum Vitae (CV)
1.First Name Kaupo
2.Surname Kukli
3.Institution University of Tartu, Institute of Experimental Physics and Technology
4.Position senior researcher
5.Date of birth 22.12.1967 (day.month.year)
6.Education higher
7.Research and
professional experience		 1992-1999, PhD student, University of Tartu;
1996-1997, researcher, Helsinki University of Technology;
1998-2001 researcher, University of Tartu, visiting researcher at University of Helsinki;
Since 2001 senior researcher at the University of Tartu, post-doc at the University of Helsinki.
8.Academic degree doctor of philosophy
9.Dates and sites of
earning the degrees		 University of Tartu, 1999
10.Honours/awards Finnish Republic award: grant VIRO-75, 1993
11.Research-administrative
experience		 Participated in organizing scientific meetings, projects and rewieving scientific publications
12.Supervised dissertations
13.Current research program Growth, phase composition and dielectric properties of nanostructured thinn solid films, atomic layer deposition and epitaxy of metal oxides, mixtures and solid solutions.
14.Current grant funding Estonian Science Foundation grant No. 5861 (leader A. Rosental), principal researcher at the University of Tartu, Institute of Experimental Physics and Technology.
15.List of most important publications

Atomic layer deposition and properties of lanthanum oxide and lanthanum-aluminum oxide films. Kukli, Kaupo; Ritala, Mikko; Pore, Viljami; Leskelä, Markku; Sajavaara, Timo; Hegde, Rama I.; Gilmer, David C.; Tobin, Philip J.; Jones, Anthony C.; Aspinall, Helen C. Chemical Vapor Deposition (2006), 12(2-3), 158-164. Publisher Wiley-VCH Verlag GmbH & Co.

Atomic layer deposition of calcium oxide and calcium hafnium oxide films using calcium cyclopentadienyl precursor. Kukli, Kaupo; Ritala, Mikko; Sajavaara, Timo; Hänninen, Timo; Leskelä, Markku. Thin Solid Films (2006), 500(1-2), 322-329.

Disordered structure and density of gap states in high-permittivity thin solid films, in: Defects in high-k Gate Dielectric Stacks. Kukli, Kaupo; Dueñas, Salvador; Castán, Helena; García, Hector; Barbolla, Juan; Aarik, Jaan; Aidla, Aleks; Ritala, Mikko; Leskelä, Markku; in: Nano-Electronic Semiconductor Devices, Ed. E. Gusev. NATO Science Series II. Mathematics, Physics and Chemistry – Vol. 220, Springer 2006, Netherlands. pp. 123-134.

Effect of preparation conditions on properties of atomic layer deposited TiO2 films in Mo-TiO2-Al stacks. Jõgi, Indrek; Aarik, Jaan; Laan, Matti; Lu, Jun; Kukli, Kaupo; Käämbre, Henn; Sajavaara, Timo; Uustare, Teet. Thin Solid Films (2006) In press. Available online 25 January 2006 via www.sciencedirect.com

Electrical defects in atomic layer deposited HfO2 films on silicon: Influence of precursor chemistries and substrate treatment. Dueñas, Salvador; Castán, Helena; García, Hector; Bailón, Luis; Kukli, Kaupo; Ritala, Mikko; Leskelä, Markku; in: Nano-Electronic Semiconductor Devices, Ed. E. Gusev. NATO Science Series II. Mathematics, Physics and Chemistry – Vol. 220, Springer 2006, Netherlands. pp. 287-298.

HfO2 films grown by ALD using cyclopentadienyl-type precursors and H2O or O3 as oxygen source. Niinistö, Jaakko; Putkonen, Matti; Niinistö, Lauri; Arstila, Kai; Sajavaara, Timo; Lu, Jun; Kukli, Kaupo; Ritala, Mikko; Leskelä, Markku, Journal of The Electrochemical Society (2006) 153(3), F39-F45. Publisher: Electrochemical Society.

High-permittivity YScO3 thin films by atomic layer deposition using two precursor approaches. Myllymäki, Pia; Nieminen, Minna; Niinistö, Jaakko; Putkonen, Matti; Kukli, Kaupo; Niinistö, Lauri, Journal of Materials Chemistry (2006) 16(6), 563-569. Publisher: Royal Society of Chemistry.

Influence of single and double deposition temperatures on the interface quality of atomic layer deposited Al2O3 dielectric thin films on silicon. Dueñas, S.; Castán, H.; García, H.; de Castro, A.; Bailón, L.; Kukli, K.; Aidla, A.; Aarik, J.; Mändar, H.; Uustare, T.; Lu, J.; Hårsta, A.; Journal of Applied Physics (2006) 99(5), 054902 (8 pages). Publisher: American Institute of Physics.

Rare-earth oxide thin films for gate dielectrics in microelectronics. Leskelä, Markku; Kukli, Kaupo; Ritala, Mikko. Journal of Alloys and Compounds (2006) In press. Available online 15 December 2005 via www.sciencedirect.com

A comparative study of the electrical properties of TiO2 films grown by high-pressure reactive sputtering and atomic layer deposition. Dueñas, S.; Castán, H.; García, H.; San Andrés, E.; Toledano-Luque, M.; Mártil, I.; González-Díaz, G.; Kukli, K.; Uustare, T.; Aarik, J. Semiconductor Science and Technology (2005), 20, 1044-1051. Publisher: Institute of Physics and IOP Publishing Ltd.

Analytical TEM characterization of the interfacial layer between ALD HfO2 film and silicon substrate. Lu, J.; Aarik, J.; Sundqvist, J.; Kukli, K.; Hårsta, A.; Carlsson, J.-O. Journal of Crystal Growth (2005), 273(3-4), 510-514. Publisher: Elsevier B.V.

Atomic Layer Deposition and Characterization of HfO2 Films on Noble Metal Film Substrates. Kukli, Kaupo; Aaltonen, Titta; Aarik, Jaan; Lu, Jun; Ritala, Mikko; Ferrari, Sandro; Harsta, Anders; Leskelä, Markku. Journal of the Electrochemical Society (2005), 152(7), F75-F82. Publisher: Electrochemical Society.

Atomic layer deposition of dielectric Nb2O5 films using the NbI5-O2 precursor combination. Rooth, Mårten; Kukli, Kaupo; Hårsta, Anders. Proceedings - Electrochemical Society (2005), 2005-09, 598-604.

Atomic layer deposition of hafnium dioxide thin films from hafnium tetrakis(dimethylamide) and water. Kukli, Kaupo; Pilvi, Tero; Ritala, Mikko; Sajavaara, Timo; Lu, Jun; Leskelä, Markku. Thin Solid Films (2005), 491(1-2), 328-338. Publisher: Elsevier B.V.

Atomic layer deposition rate, phase composition and performance of HfO2 films on noble metal and alkoxylated silicon substrates. Kukli, Kaupo; Ritala, Mikko; Pilvi, Tero; Aaltonen, Titta; Aarik, Jaan; Lautala, Markus; Leskelä, Markku. Materials Science & Engineering, B: Solid-State Materials for Advanced Technology (2005), B118(1-3), 112-116. Publisher: Elsevier B.V.

Comparative study on electrical properties of atomic layer deposited high-permittivity materials on silicon substrates. Dueñas, S.; Castán, H.; García, H.; Barbolla, J.; Kukli, K.; Ritala, M.; Leskelä, M. Thin Solid Films (2005), 474(1-2), 222-229. Publisher: Elsevier B.V.

Controlled growth of HfO2 thin films by atomic layer deposition from cyclopentadienyl-type precursor and water. Niinistö, Jaakko; Putkonen, Matti; Niinistö, Lauri; Stoll, Sarah L.; Kukli, Kaupo; Sajavaara, Timo; Ritala, Mikko; Leskelä, Markku. Journal of Materials Chemistry (2005), 15(23), 2271-2275. Publisher: Royal Society of Chemistry.

Dry-Etched Silicon-on-Insulator Waveguides With Low Propagation and Fiber-Coupling Losses. Solehmainen, Kimmo; Aalto, Timo; Dekker, James; Kapulainen, Markku; Harjanne, Mikko; Kukli, Kaupo; Heimala, Päivi; Kolari, Kai; Leskelä, Markku; Journal of Lightwave Technology (2005), 23, 3875-3880. Publisher: IEEE/Optical Society of America.

Effect of selected atomic layer deposition parameters on the structure and dielectric properties of hafnium oxide films. [Erratum to document cited in CA142:103963]. Kukli, Kaupo; Aarik, Jaan; Ritala, Mikko; Uustare, Teet; Sajavaara, Timo; Lu, Jun; Sundqvist, Jonas; Aidla, Aleks; Pung, Lembit; Hårsta, Anders; Leskelä, Markku. Journal of Applied Physics (2005), 97(9), 099903/1. Publisher: American Institute of Physics.

Engineering structure and properties of hafnium oxide films by atomic layer deposition temperature. Kukli, Kaupo; Aarik, Jaan; Uustare, Teet; Lu, Jun; Ritala, Mikko; Aidla, Aleks; Pung, Lembit; Hårsta, Anders; Leskelä, Markku; Kikas, Arvo; Sammelselg, Väino. Thin Solid Films (2005), 479(1-2), 1-11. Publisher: Elsevier B.V.

High Growth Rate of Erbium Oxide Thin Films in Atomic Layer Deposition from (CpMe)3Er and Water Precursors. Päiväsaari, J.; Niinistö, J.; Arstila, K.; Kukli, K.; Putkonen, M.; Niinistö, L. Chemical Vapor Deposition (2005), 11, 415-419. Publisher: Wiley-VCH Verlag GmbH & Co.

Recent developments in the MOCVD and ALD of rare earth oxides and silicates. Jones, Anthony C.; Aspinall, Helen C.; Chalker, Paul R.; Potter, Richard J.; Kukli, Kaupo; Rahtu, Antti; Ritala, Mikko; Leskelä, Markku. Materials Science & Engineering, B: Solid-State Materials for Advanced Technology (2005), B118(1-3), 97-104. Publisher: Elsevier B.V.

The effect of precursors to the structure and conductivity of atomic layer deposited titania. Jõgi, Indrek; Aarik, Jaan; Kaupo Kukli, Kaupo; Käämbre, Henn; Laan, Matti; Uustare, Teet. Proceedings - Electrochemical Society (2005), 2005-09, 575-582.

The electrical-interface quality of as-grown atomic-layer-deposited disordered HfO2 on p- and n-type silicon. Duenas, S.; Castan, H.; Garcia, H.; Barbolla, J.; Kukli, K.; Aarik, J.; Aidla, A. Semiconductor Science and Technology (2004), 19(9), 1141-1148. Publisher: Institute of Physics Publishing.

Atomic layer deposition of hafnium dioxide films from hafnium hydroxylamide and water. Kukli, Kaupo; Ritala, Mikko; Leskelä, Markku; Sajavaara, Timo; Keinonen, Juhani; Jones, Anthony C.; Tobin, Neil L. Chemical Vapor Deposition (2004), 10(2), 91-96. Publisher: Wiley-VCH Verlag GmbH & Co.

Crystallization in hafnia- and zirconia-based systems. Ushakov, S. V.; Navrotsky, A.; Yang, Y.; Stemmer, S.; Kukli, K.; Ritala, M.; Leskelä, M. A.; Fejes, P.; Demkov, A.; Wang, C.; Nguyen, B.-Y.; Triyoso, D.; Tobin, P. Physica Status Solidi B: Basic Research (2004), 241(10), 2268-2278. Publisher: Wiley-VCH Verlag GmbH.

Dielectric Permittivity and Intercalation Parameters of Li Ion Intercalated Atomic Layer Deposited ZrO2. Jonsson, A. K.; Niklasson, G. A.; Ritala, Mikko; Leskelä, Markku; Kukli, Kaupo. Journal of the Electrochemical Society (2004), 151(3), F54-F58. Publisher: Electrochemical Society.

Effect of growth temperature and postmetallization annealing on the interface and dielectric quality of atomic layer deposited HfO2 on p and n silicon. Dueñas, S.; Castán, H.; García,, H.; Barbolla, J.; Kukli, K.; Aarik, J. Journal of Applied Physics (2004), 96(3), 1365-1372. Publisher: American Institute of Physics.

Effect of selected atomic layer deposition parameters on the structure and dielectric properties of hafnium oxide films. Kukli, Kaupo; Aarik, Jaan; Ritala, Mikko; Uustare, Teet; Sajavaara, Timo; Lu, Jun; Sundqvist, Jonas; Aidla, Aleks; Pung, Lembit; Hårsta, Anders; Leskelä, Markku. Journal of Applied Physics (2004), 96(9), 5298-5307. Publisher: American Institute of Physics.

Electrical characterization of hafnium oxide and hafnium-rich silicate films grown by atomic layer deposition. Dueñas, S.; Castán, H.; García, H.; Barbolla, J.; Kukli, K.; Aarik, J.; Ritala, M.; Leskelä, M. Microelectronics Reliability (2004), Volume Date 2005, 45(5-6), 949-952. Publisher: Elsevier Ltd.

Evaluation of a Praseodymium Precursor for Atomic Layer Deposition of Oxide Dielectric Films. Kukli, Kaupo; Ritala, Mikko; Pilvi, Tero; Sajavaara, Timo; Leskelä, Markku; Jones, Anthony C.; Aspinall, Helen C.; Gilmer, David C.; Tobin, Philip J. Chemistry of Materials (2004), 16(24), 5162-5168. Publisher: American Chemical Society.

Hafnium silicon oxide films prepared by atomic layer deposition. Kukli, Kaupo; Ritala, Mikko; Leskela, Markku; Sajavaara, Timo; Keinonen, Juhani; Gilmer, David C.; Tobin, Philip J. Materials Science & Engineering, B: Solid-State Materials for Advanced Technology (2004), B109(1-3), 2-5. Publisher: Elsevier Science B.V.

On the interface quality of MIS structures fabricated from atomic layer deposition of HfO2, Ta2O5 and Nb2O5-Ta2O5-Nb2O5 dielectric thin films. Dueñas, S.; Castán, H.; García, H.; Barbolla, J.; Kukli, K.; Ritala, M.; Leskelä, M. Materials Research Society Symposium Proceedings (2004), 786(Fundamentals of Novel Oxide/Semiconductor Interfaces), 147-152. Publisher: Materials Research Society.

Properties of HfO2 Thin Films Grown by ALD from Hafnium tetrakis(ethylmethylamide) and Water. Kukli, Kaupo; Ritala, Mikko; Lu, Jun; Hårsta, Anders; Leskelä, Markku. Journal of the Electrochemical Society (2004), 151(8), F189-F193. Publisher: Electrochemical Society.

Properties of Oxide Film Atomic Layer Deposited from Tetraethoxy Silane, Hafnium Halides, and Water. Kukli, Kaupo; Ritala, Mikko; Leskelä, Markku; Sajavaara, Timo; Keinonen, Juhani; Hegde, Rama I.; Gilmer, David C.; Tobin, Philip J. Journal of the Electrochemical Society (2004), 151(5), F98-F104. Publisher: Electrochemical Society.

Some recent developments in the MOCVD and ALD of high-k dielectric oxides. Jones, Anthony C.; Aspinall, Helen C.; Chalker, Paul R.; Potter, Richard J.; Kukli, Kaupo; Rahtu, Antti; Ritala, Mikko; Leskelä, Markku. Journal of Materials Chemistry (2004), 14(21), 3101-3112. Publisher: Royal Society of Chemistry.

Structural and dielectric properties of thin ZrO2 films on silicon grown by atomic layer deposition from cyclopentadienyl precursor. Niinistö, J.; Putkonen, M.; Niinistö, L.; Kukli, K.; Ritala, M.; Leskelä, M. Journal of Applied Physics (2004), 95(1), 84-91. Publisher: American Institute of Physics.

Thin film nanolaminate analysis by simultaneous heavy ion recoil and X-ray spectrometry. Harjunmaa, A.; Sajavaara, T.; Arstila, K.; Kukli, K.; Keinonen, J. Nuclear Instruments & Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms (2004), 219-220, 773-777. Publisher: Elsevier Science B.V.

Atomic Layer Deposition of Hafnium Dioxide Films from 1-Methoxy-2-methyl-2-propanolate Complex of Hafnium. Kukli, Kaupo; Ritala, Mikko; Leskelä, Markku; Sajavaara, Timo; Keinonen, Juhani; Jones, Anthony C.; Roberts, John L. Chemistry of Materials (2003), 15(8), 1722-1727. Publisher: American Chemical Society.

Atomic layer deposition of hafnium dioxide films using hafnium bis(2-butanolate)bis- (1-methoxy-2-methyl-2-propanolate) and water. Kukli, Kaupo; Ritala, Mikko; Leskelä, Markku; Sajavaara, Timo; Keinonen, Juhani; Jones, Anthony C.; Roberts, John L. Chemical Vapor Deposition (2003), 9(6), 315-320. Publisher: Wiley-VCH Verlag GmbH & Co.

Atomic layer deposition of HfO2 thin films and nanolayered HfO2-Al2O3-Nb2O5 dielectrics. Kukli, Kaupo; Ritala, Mikko; Leskelä, Markku; Sajavaara, Timo; Keinonen, Juhani; Gilmer, David C.; Hegde, Rama; Rai, Raghaw; Prabhu, Lata. Journal of Materials Science: Materials in Electronics (2003), 14(5/6/7), 361-367. Publisher: Kluwer Academic Publishers

Atomic layer deposition of polycrystalline HfO2 films by the HfI4-O2 precursor combination. Sundqvist, J., Hårsta, A., Aarik, J.; Kukli, K., Aidla, A., Thin Solid Films (2003), 427(1-2), 147-151. Publisher: Elsevier.

Conductance transient, capacitance-voltage and deep-level transient spectroscopy characterization of atomic layer deposited hafnium and zirconium oxide thin films. Dueñas, S.; Castán, H.; Barbolla, J.; Kukli, K.; Ritala, M.; Leskela, M. Solid-State Electronics (2003), 47(10), 1623-1629. Publisher: Elsevier Science Ltd.

ZrO2 thin films grown on silicon substrates by atomic layer deposition with Cp2Zr(CH3)2 and water as precursors. Putkonen, Matti; Niinistö, Jaakko; Kukli, Kaupo; Sajavaara, Timo; Karppinen, Maarit; Yamauchi, Hisao; Niinistö, Lauri. Chemical Vapor Deposition (2003), 9(4), 207-212. Publisher: Wiley-VCH Verlag GmbH & Co.

Atomic layer deposition of Al2O3, ZrO2, Ta2O5, and Nb2O5 based nanolayered dielectrics. Kukli, Kaupo; Ritala, Mikko; Leskelä, Markku; Sajavaara, Timo; Keinonen, Juhani; Gilmer, David; Bagchi, Sandeep; Prabhu, Lata. Journal of Non-Crystalline Solids (2002), 303(1), 35-39. Publisher: Elsevier Science B.V.

Atomic layer deposition of hafnium dioxide films from hafnium tetrakis(ethylmethylamide) and water. Kukli, Kaupo; Ritala, Mikko; Sajavaara, Timo; Keinonen, Juhani; Leskelä, Markku. Chemical Vapor Deposition (2002), 8(5), 199-204. Publisher: Wiley-VCH Verlag GmbH & Co.

Atomic layer deposition of TiO2 thin films from TiI4 and H2O. Aarik, Jaan; Aidla, Aleks; Uustare, Teet; Kukli, Kaupo; Sammelselg, Väino; Ritala, Mikko; Leskelä, Markku. Applied Surface Science (2002), 193(1-4), 277-286. Publisher: Elsevier Science B.V.

Comparison of hafnium oxide films grown by atomic layer deposition from iodide and chloride precursors. Kukli, Kaupo; Ritala, Mikko; Sajavaara, Timo; Keinonen, Juhani; Leskelä, Markku. Department of Chemistry, Thin Solid Films (2002), 416(1-2), 72-79. Publisher: Elsevier Science B.V.

Epitaxial growth of TiO2 films in a hydroxyl-free atomic layer deposition process. Schuisky, Mikael; Kukli, Kaupo; Aarik, Jaan; Lu, Jun; Hårsta, Anders. Journal of Crystal Growth (2002), 235(1-4), 293-299. Publisher: Elsevier Science B.V.

Hafnium tetraiodide and oxygen as precursors for atomic layer deposition of hafnium oxide thin films. Aarik, Jaan; Sundqvist, Jonas; Aidla, Aleks; Lu, Jun; Sajavaara, Timo; Kukli, Kaupo; Hårsta, Anders. Thin Solid Films (2002), 418(2), 69-72. Publisher: Elsevier Science B.V.

Influence of growth temperature on properties of zirconium dioxide films grown by atomic layer deposition. Kukli, Kaupo; Ritala, Mikko; Aarik, Jaan; Uustare, Teet; Leskelä, Markku. Journal of Applied Physics (2002), 92(4), 1833-1840. Publisher: American Institute of Physics.

Influence of thickness and growth temperature on the properties of zirconium oxide films grown by atomic layer deposition on silicon. Kukli, Kaupo; Ritala, Mikko; Uustare, Teet; Aarik, Jaan; Forsgren, Katarina; Sajavaara, Timo; Leskelä, Markku; Hårsta, Anders. Thin Solid Films (2002), 410(1-2), 53-60. Publisher: Elsevier Science B.V.

Properties of hafnium oxide films grown by atomic layer deposition from hafnium tetraiodide and oxygen. Kukli, Kaupo; Ritala, Mikko; Sundqvist, Jonas; Aarik, Jaan; Lu, Jun; Sajavaara, Timo; Leskelä, Markku; Hårsta, Anders. Journal of Applied Physics (2002), 92(10), 5698-5703. Publisher: American Institute of Physics.

Atomic layer deposition of zirconium oxide from zirconium tetraiodide, water and hydrogen peroxide. Kukli, K.; Forsgren, K.; Aarik, J.; Uustare, T.; Aidla, A.; Niskanen, A.; Ritala, M.; Leskelä, M.; Hårsta, A. Journal of Crystal Growth (2001), 231(1-2), 262-272.

Atomic layer deposition of zirconium oxide from zirconium tetraiodide, water and hydrogen peroxide. Kukli, K.; Forsgren, K.; Aarik, J.; Uustare, T.; Aidla, A.; Niskanen, A.; Ritala, M.; Leskelä, M.; Hårsta, A. Journal of Crystal Growth (2001), 231(1-2), 262-272. Publisher: Elsevier Science B.V

Atomic layer deposition of tantalum oxide thin films from iodide precursor. Kukli, Kaupo; Aarik, Jaan; Aidla, Aleks; Forsgren, Katarina; Sundqvist, Jonas; Hårsta, Anders; Uustare, Teet; Mändar, Hugo; Kiisler, Alma-Asta. Chemistry of Materials (2001), 13(1), 122-128. Publisher: American Chemical Society.

Atomic Layer Deposition of Thin Films Using O2 as Oxygen Source. Schuisky, Mikael; Aarik, Jaan; Kukli, Kaupo; Aidla, Aleks; Hårsta, Anders. Langmuir (2001), 17(18), 5508-5512. Publisher: American Chemical Society.

Development of dielectric properties of niobium oxide, tantalum oxide, and aluminum oxide based nanolayered materials. Kukli, Kaupo; Ritala, Mikko; Leskelä, Markku. Journal of the Electrochemical Society (2001), 148(2), F35-F41. Publisher: Electrochemical Society.

Dielectric properties of zirconium oxide grown by atomic-layer deposition from iodide precursor. Kukli, Kaupo; Forsgren, Katarina; Ritala, Mikko; Leskelä, Markku; Aarik, Jaan; Hårsta, Anders. Journal of the Electrochemical Society (2001), 148(12), F227-F232. Publisher: Electrochemical Society.

In Situ Mass Spectrometry Study on Atomic Layer Deposition from Metal (Ti, Ta, and Nb) Ethoxides and Water. Rahtu, Antti; Kukli, Kaupo; Ritala, Mikko. Chemistry of Materials (2001), 13(3), 817-823. Publisher: American Chemical Society.

Phase transformations in hafnium dioxide thin films grown by atomic layer deposition at high temperatures. Aarik, J.; Aidla, A.; Mändar, H.; Uustare, T.; Kukli, K.; Schuisky, M. Applied Surface Science (2001), 173(1-2), 15-21. Publisher: Elsevier Science B.V.

(Ta1-xNbx)2O5 films produced by atomic layer deposition: Temperature dependent dielectric spectroscopy and room-temperature I-V characteristics. Strømme, M.; Niklasson, G. A.; Ritala, M.; Leskelä, M.; Kukli, K. Journal of Applied Physics (2001), 90(9), 4532-4542. Publisher: American Institute of Physics.

Atomic layer chemical vapor deposition of TiO2. Low temperature epitaxy of rutile and anatase. Schuisky, Mikael; Hårsta, Anders; Aidla, Aleks; Kukli, Kaupo; Kiisler, Alma-Asta; Aarik, Jaan. Journal of the Electrochemical Society (2000), 147(9), 3319-3325. Publisher: Electrochemical Society.

Atomic layer CVD in the Bi-Ti-O system. Schuisky, Mikael; Kukli, Kaupo; Ritala, Mikko; Harsta, Anders; Leskelä, Markku. Chemical Vapor Deposition (2000), 6(3), 139-145. Publisher: Wiley-VCH Verlag GmbH.

Atomic Layer Deposition and Chemical Vapor Deposition of Tantalum Oxide by Successive and Simultaneous Pulsing of Tantalum Ethoxide and Tantalum Chloride. Kukli, Kaupo; Ritala, Mikko; Leskelä, Markku. Chemistry of Materials (2000), 12(7), 1914-1920. Publisher: American Chemical Society.

Atomic layer deposition of high-k oxides. Ritala, Mikko; Kukli, Kaupo; Vehkamäki, Marko; Hänninen, Timo; Hatanpää, Timo; Räisanen, Petri I.; Leskela, Markku. Proceedings - Electrochemical Society (2000), 2000-13(CVD XV), 597-604. Publisher: Electrochemical Society.

Atomic layer deposition of metal oxide films by using metal alkoxides as an oxygen source. Räisanen, Petri. I.; Kukli, Kaupo; Rahtu, Antti; Ritala, Mikko; Leskelä, Markku. Proceedings - Electrochemical Society (2000), 2000-13(CVD XV), 623-628.

Atomic layer deposition of oxide thin films with metal alkoxides as oxygen sources. Ritala, Mikko; Kukli, Kaupo; Rahtu, Antti; Räisanen, Petri I.; Leskelä, Markku; Sajavaara, Timo; Keinonen, Juhani. Science (2000), 288(5464), 319-321. Publisher: American Association for the Advancement of Science.

Atomic layer deposition of titanium oxide from TiI4 and H2O2. Kukli, Kaupo; Ritala, Mikko; Schuisky, Mikael; Leskelä, Markku; Sajavaara, Timo; Keinonen, Juhani; Uustare, Teet; Hårsta, Anders. Chemical Vapor Deposition (2000), 6(6), 303-310. Publisher: Wiley-VCH Verlag GmbH

Characterisation of Ta2O5 films prepared by ALCVD. Forsgren, Katarina; Sundqvist, Jonas; Hårsta, Anders; Kukli, Kaupo; Aarik, Jaan; Aidla, Aleks. Proceedings - Electrochemical Society (2000), 2000-13(CVD XV), 645-651. Publisher: Electrochemical Society.

Influence of atomic layer deposition parameters on the phase content of Ta2O5 films. Kukli, Kaupo; Ritala, Mikko; Matero, Raija; Leskelä, Markku. Journal of Crystal Growth (2000), 212(3/4), 459-468. Publisher: Elsevier Science B.V.

Low-temperature deposition of zirconium oxide-based nanocrystalline films by alternate supply of Zr[OC(CH3)3]4 and H2O. Kukli, Kaupo; Ritala, Mikko; Leskela, Markku. Chemical Vapor Deposition (2000), 6(6), 297-302. Publisher: Wiley-VCH Verlag GmbH.

Real-Time Monitoring in Atomic Layer Deposition of TiO2 from TiI4 and H2O-H2O2. Kukli, Kaupo; Aidla, Aleks; Aarik, Jaan; Schuisky, Mikael; Hårsta, Anders; Ritala, Mikko; Leskelä, Markku. Langmuir (2000), 16(21), 8122-8128. Publisher: American Chemical Society.

Ultrathin TiO2 films deposited by atomic layer chemical vapor deposition. Schuisky, Mikael; Kukli, Kaupo; Aidla, Aleks; Aarik, Jaan; Ludvigsson, Mikael; Hårsta, Anders. Proceedings - Electrochemical Society (2000), 2000-13(CVD XV), 637-644. Publisher: Electrochemical Society.

Controlled Growth of TaN, Ta3N5, and TaOxNy Thin Films by Atomic Layer Deposition. Ritala, Mikko; Kalsi, Pia; Riihelä, Diana; Kukli, Kaupo; Leskelä, Markku; Jokinen, Janne. Chemistry of Materials (1999), 11(7), 1712-1718. Publisher: American Chemical Society.

Controlled growth of yttrium oxysulphide thin films by atomic layer deposition. Kukli, K.; Peussa, M.; Johansson, L.-S.; Nykänen, E.; Niinistö, L. Materials Science Forum (1999), 315-317(Rare Earths '98), 216-221. Publisher: Trans Tech Publications Ltd.

In situ characterization of atomic layer deposition processes by a mass spectrometer. Ritala, M.; Juppo, M.; Kukli, K.; Rahtu, A.; Leskelä, M. Journal de Physique IV: Proceedings (1999), 9(Pr8, Proceedings of the Twelfth European Conference on Chemical Vapour Deposition, 1999, Vol. 2), 1021-1028. Publisher: EDP Sciences.

Properties of atomic layer deposited (Ta1-xNbx)2O5 solid-solution films and Ta2O5-Nb2O5 nanolaminates. Kukli, Kaupo; Ritala, Mikko; Leskelä, Markku. Journal of Applied Physics (1999), 86(10), 5656-5662. Publisher: American Institute of Physics.

Deposition of lanthanum sulfide thin films by atomic layer epitaxy. Kukli, Kaupo; Heikkinen, Hannele; Nykänen, Erja; Niinistö, Lauri. Journal of Alloys and Compounds (1998), 275-277 10-14. Publisher: Elsevier Science S.A.

Niobium oxide thin films grown by atomic layer epitaxy. Kukli, Kaupo; Ritala, Mikko; Leskelä, Markku; Lappalainen, Reijo. Chemical Vapor Deposition (1998), 4(1), 29-34. Publisher: Wiley-VCH Verlag GmbH.

Atomic layer epitaxy growth of aluminum oxide thin films from a novel Al(CH3)2Cl precursor and H2O. Kukli, Kaupo; Ritala, Mikko; Leskelä, Markku; Jokinen, Janne. Journal of Vacuum Science & Technology, A: Vacuum, Surfaces, and Films (1997), 15(4), 2214-2218. Publisher: American Institute of Physics.

Dielectric oxide nanolaminates deposited by atomic layer epitaxy. Kukli, Kaupo; Ritala, Mikko; Leskelä, Markku. Proceedings - Electrochemical Society (1997), 97-25(Chemical Vapor Deposition), 1137-1144. Publisher: Electrochemical Society.

In situ study of atomic layer epitaxy growth of tantalum oxide thin films from Ta(OC2H5)5 and H2O. Kukli, Kaupo; Aarik, Jaan; Aidla, Aleks; Siimon, Hele; Ritala, Mikko; Leskelä, Markku. Applied Surface Science (1997), 112, 236-242. Publisher: Elsevier.

Properties of (Nb1-xTax)2O5 solid solutions and (Nb1-xTax)2O5-ZrO2 nanolaminates grown by atomic layer epitaxy. Kukli, K.; Ritala, M.; Leskelä, M. Nanostructured Materials (1998), Volume Date 1997, 8(7), 785-793. Publisher: Elsevier Science Inc.

Properties of Ta2O5-based dielectric nanolaminates deposited by atomic layer epitaxy. Kukli, Kaupo; Ihanus, Jarkko; Leskelä, Markku. Journal of the Electrochemical Society (1997), 144(1), 300-306. Publisher: Electrochemical Society.

Mechanisms of suboxide growth and etching in atomic layer deposition of tantalum oxide from TaCl5 and H2O. Aarik, Jaan; Kukli, Kaupo; Aidla, Aleks; Pung, Lembit. Applied Surface Science (1996), 103(4), 331-341. Publisher: Elsevier.

Tailoring the dielectric properties of HfO2-Ta2O5 nanolaminates. Kukli, Kaupo; Ihanus, Jarkko; Ritala, Mikko; Leskelä, Markku. Applied Physics Letters (1996), 68(26), 3737-3739. Publisher: American Institute of Physics.

Atomic layer epitaxy growth of tantalum oxide thin films from Ta(OC2H5)5 and H2O. Kukli, Kaupo; Ritala, Mikko; Leskelä, Markku. Journal of the Electrochemical Society (1995), 142(5), 1670-5. Publisher: Electrochemical Society.

Properties of tantalum oxide thin films grown by atomic layer deposition. Kukli, Kaupo; Aarik, Jaan; Aidla, Aleks; Kohan, Oksana; Uustare, Teet; Sammelselg, Väino. Thin Solid Films (1995), 260(2), 135-42. Publisher: Elsevier.

Deposition and etching of tantalum oxide films in atomic layer epitaxy process. Aarik, Jaan; Aidla, Aleks; Kukli, Kaupo; Uustare, Teet. Journal of Crystal Growth (1994), 144(1/2), 116-19. Publisher: Elsevier.

In situ characterization of ALE growth by reagent pulse delay times in a flow-type reactor. Aarik, J.; Aidla, A.; Kukli, K. Applied Surface Science (1994), 75(1-4), 180-4.

last updated: 06.10.2005

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