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| Elulookirjeldus (CV) | ||
| 1. | Eesnimi | Ahti |
| 2. | Perekonnanimi | Niilisk |
| 3. | Töökoht | Tartu Ülikooli Füüsika Instituut, Kiletehnoloogia töörühm |
| 4. | Ametikoht | vanemteadur |
| 5. | Sünniaeg | 10.06.1937 (päev.kuu.aasta) |
| 6. | Haridus | kõrgem, Tartu Riiklik Ülikool 1960 |
| 7. | Teenistuskäik | 1961-1963 TA Füüsika ja Astronoomia Instituudi (FAI) nooremteadur, 1963-1966 FAI aspirant, 1966-1967 FAI nooremteadur, 1967-1970 FAI peainsener, 1970-1971 FAI vaneminsener, 1971-1972 FAI nooremteadur, 1972-1973 FAI vanemteadur, 1973-1990 TA Füüsikainstituudi (FI) vanemteadur, 1990-2003 FI (alates dets. 1997 TÜ FI) teadur, 2003-tänini TÜ FI erakorraline vanemteadur. 1980 Poola TA Uurimistsenter "Unipress", külalisteadur; 2003 Havai Ülikool (USA) külalis-stipendiaat; 1977 - vanemteaduri kutse (pooljuhtide ja dielektrikute füüsika) NSVL TA-lt |
| 8. | Teaduskraad | füüsika-matemaatika kandidaat |
| 9. | Teaduskraadi välja andnud asutus, aasta |
Tartu Riiklik Ülikool 1971 |
| 10. | Tunnustused | Eesti NSV riiklik preemia 1982 (koos kollektiivi teiste liikmetega) |
| 11. | Teadusorganisatsiooniline ja –administratiivne tegevus |
Eesti Füüsikaseltsi liige; osalus teadusliku aparatuuriehituse firma Evikon (Tartu teaduspark) loomisel ja arendamisel |
| 12. | Juhendamisel kaitstud väitekirjad |
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| 13. | Teadustöö põhisuunad | Õhukeste oksiidkilede kasvuprotsessid ja nende reaalajaline optiline seire aatomkiht-sadestamisel; Õhukeste oksiidkilede struktuuranalüüs ja elastsusomadused optiliste meetoditega (Raman- ja Brillouini hajumise spektroskoopia); Kõrgrõhu mõju tahkiste optilistele omadustele. |
| 14. | Jooksvad grandid | a) Põhitäitja ETF grandis nr. 5861 (“Pinna- ja siirdekihtide mõju laia keelutsooniga oksiidikilede aatomkihtkasvule ja omadustele”). b) Põhitäitja ETF grandis nr. 5864 (“Õhukeste metalloksiidkilede ja -fiibrite spektroskoopilised uuringud ja uudsed rakendused”). |
| 15. | Teaduspublikatsioonid |
A. Niilisk., M. Moppel, M. Pärs, I. Sildos, T. Jantson, T. Avarmaa, R. Jaaniso, and J. Aarik, Structural study of TiO2 thin films by micro-Raman spectroscopy, Central European J. Phys. 4/1 (2006) 105-116 A. Niilisk, J. Aarik, T. Uustare, H. Mändar, S. N. Tkachev, M. H. Manghnani, Structural study of ZrO2 and HfO2 thin films grown by atomic layer deposition, Proceedings of SPIE (The International Society of Optical Engineering) 5946 (2005) 98-105. S. N. Tkachev, M. H. Manghnani, A. Niilisk, J. Aarik, H. Mändar, Micro-Raman spectroscopy and X-ray diffraction studies of atomic-layer-deposited ZrO2 and HfO2 thin films, Journal of Materials Science 40 (2005) 4293-4298. S. N. Tkachev, M. H. Manghnani, A. Niilisk, J. Aarik, H. Mändar, Raman and Brillouin scattering spectroscopy studies of atomic-layer-deposited ZrO2 and HfO2 thin films, Spectrochimica Acta Part A 61 (2005) 2434-2438. A. Niilisk, A.Rosental, A.Tarre, T.Uustare, High-temperature atomic layer epitaxy of TiO2 from TiCl4 and H2O2–H2O, Proceedings of the Estonian Academy of Sciences, Physics&Mathematics, 52 (2003) 257-265. G.-J. Babonas, A. Niilisk, A. Reza, A. Matulis, A. Rosental, Spectroscopic ellipsometry of TiO2/Si, Proceedings of SPIE 5122 (2003) 51-56. A. Niilisk, A. Rosental, A. Gerst, V. Sammelselg, T. Uustare, Atomic-scale optical monitoring of the initial growth of TiO2 thin films, Proceedings of SPIE 4318 (2001) 72-77. A. Niilisk, A. Rosental, T. Uustare, A. Kasikov, A. Tarre, Chloride atomic-layer chemical vapor deposition of TiO2 with a chloride pretreatment of substrates, Journal de Physique IV (France) 11 (2001) Pr103-Pr107. A. Rosental, A. Tarre, P. Adamson, A. Gerst, A. Kasikov, A. Niilisk, Surface of TiO2 during atomic layer deposition as determined by incremental dielectric reflection, Applied Surface Science 142 (1999) 204-209. A.Niilisk, A.Laisaar, Pressure sensitive impurity luminescence centres in 6H SiC crystals, Physica Scripta T69 (1997) 247-249. A.Rosental, P.Adamson, A.Gerst, A.Niilisk, Monitoring of atomic layer deposition by incremental dielectric reflection, Applied Surface Science 107 (1996) 178-183. A.Niilisk, A.Laisaar, A.V.Slobodyanyuk, Effect of pressure on near-infrared abc photoluminescence spectrum of 6H SiC crystal, Solid State Communications 94 (1995) 71-74. A.Niilisk, A.Laisaar, I.S.Gorban, A.V.Slobodyanyuk, Pressure effects on zero-phonon lines in the impurity photoluminescence spectra of 6H SiC crystals, Journal of Physics and Chemistry of Solids 56 (1995) 603-606. |
viimati muudetud: 06.10.2005
| Curriculum Vitae (CV) | ||
| 1. | First Name | Ahti |
| 2. | Surname | Niilisk |
| 3. | Institution | Institute of Physics, University of Tartu, Group of Thin-Film Technology |
| 4. | Position | senior scientist |
| 5. | Date of birth | 10.06.1937 (day.month.year) |
| 6. | Education | graduated from the Tartu State University in 1960 |
| 7. | Research and professional experience |
1961-1963 Institute of Physics&Astronomy ESSR Acad.Sci. (IPhA), junior scientist; 1963-1966 IPhA, postgraduate courses;1966-1967 IPhA junior scientist; 1967-1970 IPhA, chief engineer; 1970-1971 IPhA, senior engineer; 1971-1972 IPhA, junior scientist; 1972-1973 IPhA, senior scientist; 1973-1990 Institute of Physics (IPh), ESSR Acad.Sci., senior scientist; 1990-1997 IPh, Estonian Acad. Sci., scientist; 1997-2003 IPh, University of Tartu, scientist, 2003-present IPh, University of Tartu, extraordinary senior scientist; 1980 High Pressure Research Center "Unipress", Polish Acad. Sci., visitor scientist; 2003 University of Hawaii (USA), visitor scholar; 1977 profession - senior scientist (semiconductor & dielectric physics) from the USSR Acad. Sci. |
| 8. | Academic degree | candidate of physics & mathematics (PhD) |
| 9. | Dates and sites of earning the degrees |
Tartu State University in 1971 |
| 10. | Honours/awards | Estonian SSR State award 1982 (together with other members of group) |
| 11. | Research-administrative experience |
membership of the Estonian Physics Society; participation in creation and development of the firm Evikon (Science Park of Tartu) |
| 12. | Supervised dissertations | |
| 13. | Current research program | Growth processes of thin oxide films and their real-time optical monitoring by atomic layer deposition; Structural analysis and elastic properties of thin oxide films by optical methods (Raman and Brillouin scattering spectroscopy); High-pressure effects on optical properties of solids. |
| 14. | Current grant funding | Grants No. 5861 and 5864 of the Estonian Science Foundation - principal investigator |
| 15. | List of most important publications |
A. Niilisk., M. Moppel, M. Pärs, I. Sildos, T. Jantson, T. Avarmaa, R. Jaaniso, and J. Aarik, Structural study of TiO2 thin films by micro-Raman spectroscopy, Central European J. Phys. 4/1 (2006) 105-116 A. Niilisk, J. Aarik, T. Uustare, H. Mändar, S. N. Tkachev, M. H. Manghnani, Structural study of ZrO2 and HfO2 thin films grown by atomic layer deposition, Proceedings of SPIE (The International Society of Optical Engineering) 5946 (2005) 98-105. S. N. Tkachev, M. H. Manghnani, A. Niilisk, J. Aarik, H. Mändar, Micro-Raman spectroscopy and X-ray diffraction studies of atomic-layer-deposited ZrO2 and HfO2 thin films, Journal of Materials Science 40 (2005) 4293-4298. S. N. Tkachev, M. H. Manghnani, A. Niilisk, J. Aarik, H. Mändar, Raman and Brillouin scattering spectroscopy studies of atomic-layer-deposited ZrO2 and HfO2 thin films, Spectrochimica Acta Part A 61 (2005) 2434-2438. A. Niilisk, A.Rosental, A.Tarre, T.Uustare, High-temperature atomic layer epitaxy of TiO2 from TiCl4 and H2O2–H2O, Proceedings of the Estonian Academy of Sciences, Physics&Mathematics, 52 (2003) 257-265. G.-J. Babonas, A. Niilisk, A. Reza, A. Matulis, A. Rosental, Spectroscopic ellipsometry of TiO2/Si, Proceedings of SPIE 5122 (2003) 51-56. A. Niilisk, A. Rosental, A. Gerst, V. Sammelselg, T. Uustare, Atomic-scale optical monitoring of the initial growth of TiO2 thin films, Proceedings of SPIE 4318 (2001) 72-77. A. Niilisk, A. Rosental, T. Uustare, A. Kasikov, A. Tarre, Chloride atomic-layer chemical vapor deposition of TiO2 with a chloride pretreatment of substrates, Journal de Physique IV (France) 11 (2001) Pr103-Pr107. A. Rosental, A. Tarre, P. Adamson, A. Gerst, A. Kasikov, A. Niilisk, Surface of TiO2 during atomic layer deposition as determined by incremental dielectric reflection, Applied Surface Science 142 (1999) 204-209. A.Niilisk, A.Laisaar, Pressure sensitive impurity luminescence centres in 6H SiC crystals, Physica Scripta T69 (1997) 247-249. A.Rosental, P.Adamson, A.Gerst, A.Niilisk, Monitoring of atomic layer deposition by incremental dielectric reflection, Applied Surface Science 107 (1996) 178-183. A.Niilisk, A.Laisaar, A.V.Slobodyanyuk, Effect of pressure on near-infrared abc photoluminescence spectrum of 6H SiC crystal, Solid State Communications 94 (1995) 71-74. A.Niilisk, A.Laisaar, I.S.Gorban, A.V.Slobodyanyuk, Pressure effects on zero-phonon lines in the impurity photoluminescence spectra of 6H SiC crystals, Journal of Physics and Chemistry of Solids 56 (1995) 603-606. |
last updated: 06.10.2005
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