[ sulge aken ]

Elulookirjeldus (CV)
1.Eesnimi Hugo
2.Perekonnanimi Mändar
3.Töökoht Tartu Ülikool, Füüsika Instituut
4.Ametikoht vanemteadur
5.Sünniaeg 20.10.1961 (päev.kuu.aasta)
6.Haridus lôpetatud kôrgem haridus
7.Teenistuskäik august, 1985 – august, 1987: stazöör-uurija TÜ eksperimentaalfüüsika kateedris;
september, 1987 – detsember, 1989 : samas kateedris aspirant;
jaanuar, 1990 – september, 1993 : teadur TÜ elektronluminestsentsi ja pooljuhtide laboris;
oktoober, 1993 – aprill, 1996: 1/2 vanemteadur + 1/2 dotsent TÜ eksperimentaalfüüsika ja tehnoloogia instituudis;
aprill, 1996 – august, 1999: samal ametikohal TÜ materjaliteaduse instituudis;
september, 1999 – 31.august, 2004: dotsent TÜ materjaliteaduse instituudis;
alates 01. september, 2004: erak. vanemteadur TÜ Füüsika Instituudis.
8.Teaduskraad füüsika-matemaatika kandidaat (eriala: tahke keha füüsika)
9.Teaduskraadi välja
andnud asutus, aasta		 Nôukogude Liidu Atestatsiooni Komisjon
1990
10.Tunnustused
11.Teadusorganisatsiooniline
ja –administratiivne
tegevus
12.Juhendamisel kaitstud
väitekirjad
13.Teadustöö põhisuunad Materjalide kristallstruktuuri, faasilise koostise, ôhukeste kilede tiheduse ja kareduse uurimine kasutades röntgendifraktsiooni ja röntgenpeegegelduse meetodeid.
14.Jooksvad grandid
15.Teaduspublikatsioonid

J. Aarik, A.Aidla, A. Kasikov, H.Mändar, R.Rammula, V.Sammelselg. Influence of carrier gas pressure and flow rate on atomic layer deposition of HfO2 and ZrO2 thin films. Applied Surface Science x, 2005, x–x. In Press, Corrected Proof, Available online 22 September 2005.

S.N. Tkachev, M.H. Manghnanai, A. Niilisk, J. Aarik, H. Mändar. Raman and Brillouin scattering spectroscopy studies of atomic-layer-deposited ZrO2 and HfO2 thin films. Spectrochimica Acta A, Molecular And Biomolecular Spectroscopy, 61, Iss.10, 2005, 2434–2438.

S. N. Tkachev, M. H. Manghnani, A. Niilisk, J. Aarik, H. Mändar. Micro-Raman spectroscopy and X-ray diffraction studies of atomic-layer-deposited ZrO2 and HfO2 thin films. J. Mater. Sci. 40, No. 16, 2005, 4293–4298.

T. Jantson, T. Avarmaa, H. Mändar, T. Uustare, R. Jaaniso. Nanocrystalline Cr2O3–TiO2 thin films by pulsed laser deposition. Sensors and Actuators B: Chemical. 109, 2005, 24–31.

J.Aarik, H.Mändar, M.Kirm, L.Pung, Optical characterization of HfO2 thin films grown by atomic layer deposition. Thin Solid Films 466, 2004, 41-47.

J.Aarik, H.Mändar, M.Kirm, Spectroscopic characterization of ZrO2 thin films grown by atomic layer deposition. Proc.Estonian Acad.Sci.Phys.Math. 52/3, 2003, 289-298.

J. Aarik, A.Aidla, H. Mändar, T. Uustare, M. Schuisky, A.Hårsta. Atomic layer growth of epitaxial TiO2 thin films from TiCl4 and H2O on α-Al2O3 substrates., J.Cryst.Growth. 242, 2002, 189-198.

J.Aarik, A. Aidla, H.Mändar, T. Uustare, V. Sammelselg. Growth kinetics and structure formation of ZrO2 thin films in chloride-based atomic layer deposition process. Thin Solid Films. 408, 2002, 97-103.

J.Aarik, A.Aidla, H.Mändar, T.Uustare, Atomic layer deposition of titanium dioxide from TiCl4 and H2O: investigation of growth mechanism, Appl. Surf. Sci. 172, 2001, 148-158.

J. Aarik, A.Aidla, H. Mändar, T. Uustare, K. Kukli, M. Schuisky, Phase transformations in hafnium dioxide thin films grown by atomic layer deposition at high temperatures, Appl. Surf. Sci. 173, 2001, 15-21.

J.Aarik, J. Karlis, H. Mändar, T. Uustare, V. Sammelselg. Influence of structure development on atomic layer deposition on TiO2 thin films, Appl.Surf.Sci. 181, 2001, 339-348.

Kukli,K., Aarik,J., Aidla,A., Forsgren,K., Sundqvist,J., Hårsta,A., Uustare,T., Mändar,H., Kiisler,A.A. Atomic layer deposition of tantalum oxide thin films thin films from iodide precursor, Chem.Mater., 13, 2001, 122-128.

S. Eiden-Aßmann, A.M. Schneider, P. Behrens, G. Engelhardt, H. Mändar, J. Felsche, Silver-Hydro Sodalite [Ag3(H2O)4]2 [Al3Si3O12]2: Synthesis and Structure Determination by Combination of X-ray Rietveld Refinement, Thermogravimetry, FT-IR, and 1H-MAS-NMR spectroscopy Eur. J. Inorg. Chem. 2001, 1527-1534.

viimati muudetud: 11.10.2005

Curriculum Vitae (CV)
1.First Name Hugo
2.Surname Mändar
3.Institution University of Tartu, Institute of Physics
4.Position senior scientist
5.Date of birth 20.10.1961 (day.month.year)
6.Education higher education
7.Research and
professional experience		 Aug. 1985 – Aug. 1987: assistant-researcher, University of Tartu, Dept. of Experimental Physics;
Sept. 1987 – Dec. 1989: PhD student, University of Tartu, Dept. of Experimental Physics;
Jan. 1990 – Sept. 1993 : researcher, University of Tartu, Laboratory of Electroluminescence and Semiconductors;
Oct. 1993 – April 1996: 0.5pos. Senior researcher, 0.5pos. docent, University of Tartu, Inst. of Experimental Physics and Technology;
April 1996 – Aug. 1999: 0.5pos. senior researcher, 0.5pos. docent, University of Tartu, Inst. of Materials Science;
Sept.1999 – Aug. 2004: Docent, University of Tartu, Inst. of Materials Science;
Sept. 2004 – until now: senior researcher, University of Tartu, Institute of Physics.
8.Academic degree candidate of physics and mathematics, speciality solid state physics
9.Dates and sites of
earning the degrees		 Soviet Union Attestation Committee
1990
10.Honours/awards
11.Research-administrative
experience
12.Supervised dissertations
13.Current research program Investigation of materials crystal structure, phase composition, density and roughness investigation of thin films by using X-ray diffraction and reflection methods.
14.Current grant funding
15.List of most important publications

J. Aarik, A.Aidla, A. Kasikov, H.Mändar, R.Rammula, V.Sammelselg. Influence of carrier gas pressure and flow rate on atomic layer deposition of HfO2 and ZrO2 thin films. Applied Surface Science x, 2005, x–x. In Press, Corrected Proof, Available online 22 September 2005.

S.N. Tkachev, M.H. Manghnanai, A. Niilisk, J. Aarik, H. Mändar. Raman and Brillouin scattering spectroscopy studies of atomic-layer-deposited ZrO2 and HfO2 thin films. Spectrochimica Acta A, Molecular And Biomolecular Spectroscopy, 61, Iss.10, 2005, 2434–2438.

S. N. Tkachev, M. H. Manghnani, A. Niilisk, J. Aarik, H. Mändar. Micro-Raman spectroscopy and X-ray diffraction studies of atomic-layer-deposited ZrO2 and HfO2 thin films. J. Mater. Sci. 40, No. 16, 2005, 4293–4298.

T. Jantson, T. Avarmaa, H. Mändar, T. Uustare, R. Jaaniso. Nanocrystalline Cr2O3–TiO2 thin films by pulsed laser deposition. Sensors and Actuators B: Chemical. 109, 2005, 24–31.

J.Aarik, H.Mändar, M.Kirm, L.Pung, Optical characterization of HfO2 thin films grown by atomic layer deposition. Thin Solid Films 466, 2004, 41-47.

J.Aarik, H.Mändar, M.Kirm, Spectroscopic characterization of ZrO2 thin films grown by atomic layer deposition. Proc.Estonian Acad.Sci.Phys.Math. 52/3, 2003, 289-298.

J. Aarik, A.Aidla, H. Mändar, T. Uustare, M. Schuisky, A.Hårsta. Atomic layer growth of epitaxial TiO2 thin films from TiCl4 and H2O on α-Al2O3 substrates., J.Cryst.Growth. 242, 2002, 189-198.

J.Aarik, A. Aidla, H.Mändar, T. Uustare, V. Sammelselg. Growth kinetics and structure formation of ZrO2 thin films in chloride-based atomic layer deposition process. Thin Solid Films. 408, 2002, 97-103.

J.Aarik, A.Aidla, H.Mändar, T.Uustare, Atomic layer deposition of titanium dioxide from TiCl4 and H2O: investigation of growth mechanism, Appl. Surf. Sci. 172, 2001, 148-158.

J. Aarik, A.Aidla, H. Mändar, T. Uustare, K. Kukli, M. Schuisky, Phase transformations in hafnium dioxide thin films grown by atomic layer deposition at high temperatures, Appl. Surf. Sci. 173, 2001, 15-21.

J.Aarik, J. Karlis, H. Mändar, T. Uustare, V. Sammelselg. Influence of structure development on atomic layer deposition on TiO2 thin films, Appl.Surf.Sci. 181, 2001, 339-348.

Kukli,K., Aarik,J., Aidla,A., Forsgren,K., Sundqvist,J., Hårsta,A., Uustare,T., Mändar,H., Kiisler,A.A. Atomic layer deposition of tantalum oxide thin films thin films from iodide precursor, Chem.Mater., 13, 2001, 122-128.

S. Eiden-Aßmann, A.M. Schneider, P. Behrens, G. Engelhardt, H. Mändar, J. Felsche, Silver-Hydro Sodalite [Ag3(H2O)4]2 [Al3Si3O12]2: Synthesis and Structure Determination by Combination of X-ray Rietveld Refinement, Thermogravimetry, FT-IR, and 1H-MAS-NMR spectroscopy Eur. J. Inorg. Chem. 2001, 1527-1534.

last updated: 11.10.2005

[ sulge aken ]