Raul Rammula, MSc, 2005, juh. Väino Sammelselg, Jaan Aarik. HfO2 kilede aatokihtkasvu uurimine / Atomic layer deposition study of HfO2 thin films. Tartu Ülikool

Andres Jaek, MSc, 1994, juh. Jaan Aarik. Investigation of atomic layer growth of aluminium and indium oxide thin films / Alumiinium- ja indiumoksiidkilede aatomkihtkasvu uurimine. Tartu Ülikool

Kaupo Kukli, MSc, 1993, juh. Jaan Aarik. Investigation of atomic layer epitaxial growth of tantalum oxide thin films / Tantaaloksiidkilede aatomkihtepitaksiaalse kasvu uurimine. Tartu Ülikool

A. Niilisk, J. Aarik, T. Uustare, H. Mändar, S. Tkachev, M.H. Manghnani, A structural study of ZrO2 and HfO2 thin films grown by atomic layer deposition, Proc. SPIE - Optical Materials and Applications 5946 (2005) 98–105.

I. Jõgi, J. Aarik, K. Kukli, H. Käämbre, M. Laan, J. Lu, T. Sajavaara, T. Uustare, The effect of precursors on the structure and conductivity of atomic layer deposited TiO2 films, Electrochem. Soc. Proc. 2005-09 (2005) 575–582.

J. Aarik, A. Aidla, A. Kasikov, H. Mändar, R. Rammula, V. Sammelselg, Influence of carrier gas pressure and flow rate on atomic layer deposition of HfO2 and ZrO2 thin films, Appl. Surf. Sci. 2005 (in press).

J. Aarik, A. Kasikov, M. Kirm, S. Lange, T. Uustare, H. Mändar, Optical properties of crystalline Al2O3 thin films grown by atomic layer deposition, Proc. SPIE - Optical Materials and Applications 5946 (2005) 1–10.

J. Lu, J. Aarik, J. Sundqvist, K. Kukli, A. Hårsta, J.-O. Carlsson, Analytical TEM characterization of the interfacial layer between ALD HfO2 film and silicon substrate, J. Cryst. Growth, 273 (2005) 510–514.

K. Kukli, J. Aarik, T. Uustare, J. Lu, M. Ritala, A. Aidla, L. Pung, A. Hårsta, M. Leskelä, A. Kikas, V. Sammelselg, Engineering structure and properties of hafnium oxide films by atomic layer deposition temperature, Thin Solid Films 479 (2005) 1–11.

K. Kukli, M. Ritala, T. Pilvi, T. Aaltonen, J. Aarik, M. Lautala, M. Leskelä, Atomic layer deposition rate, phase composition and performance of HfO2 films on noble metal and alkoxylated silicon substrates, Mater. Sci. Engeneering B 118 (2005) 112–116.

K. Kukli. T. Aaltonen, J. Aarik, J. Lu, M. Ritala, S. Ferrari, A. Hårsta, M. Leskelä, Atomic layer deposition and characterization of HfO2 films on noble metal film substrates, J. Electrochem. Soc. 152(7) (2005) F75–F82.

M. Kirm, J. Aarik, M. Jürgens, I. Sildos, Thin Films of HfO2 and ZrO2 as potential scintillators, Nucl. Instrum. Meth. Phys. Res. A 537 (2005) 251–255.

S. Dueñas, H. Castán, H. Carcía, E. San Andrés, M. Toledano-Loque, I. Márttil, G. González-Díaz, K. Kukli, T. Uustare, J. Aarik, A comparative study of the electrical properties of TiO2 films grown by high-pressure reactive sputtering and atomic layer deposition, Semicond. Sci. Technol. 20(10) (2005) 1044–1051.

S. Dueñas, H. Castán, H. Garcίa, J. Barbolla, K. Kukli, J. Aarik, M. Ritala, M. Leskelä, Electrical characterization of hafnium oxide and hafnium-rich silicate films grown by atomic layer deposition, Microelectronics Reliability 45 (2005) 949–952.

S.N. Tkachev, M.H. Manghnani, A. Niilisk, J. Aarik, H. Mändar, Micro-Raman spectroscopy and X-ray diffraction studies of atomic-layer-deposited ZrO2 and HfO2 thin films, J. Mater. Sci. 40 (2005) 4293–4298.

S.N. Tkachev, M.H. Manghnani, A. Niilisk, J. Aarik, H. Mändar, Raman and Brillouin scattering spectroscopy studies of atomic-layer-deposited ZrO2 and HfO2 thin films, Spectrochimica Acta A61 (2005) 2434–2438.

V. Kiisk, I. Sildos, S. Lange, V. Reedo, T. Tätte, M. Kirm, J. Aarik, Photoluminescence characterization of pure and Sm3+-doped thin metaloxide films, Appl. Surf. Sci. 247 (2005) 412–417.

I. Jõgi, J. Aarik, V. Bichevin, H. Käämbre, M. Laan, V. Sammelselg, Fowler-Nordheim tunnelling in TiO2 films grown by atomic layer deposition on gold substrates, Proc. Estonian Acad. Sci. Phys. Math. 53 (2004) 226–236.

J. Aarik, A. Aidla, A. Kikas , T. Käämbre, R. Rammula, P. Ritslaid, T. Uustare, V. Sammelselg, Effects of precursors on nucleation in atomic layer deposition of HfO2, Appl. Surf. Sci. 230 (2004) 292–300.

J. Aarik, H. Mändar, M. Kirm, L. Pung, Optical characterization of HfO2 thin films grown by atomic layer deposition, Thin Solid Films, 466 (2004) 41–47.

J. Aarik, V. Bichevin, I. Jõgi, H. Käämbre, M. Laan, V. Sammelselg, Fowler-Nordheim tunnelling in Au-TiO2-Ag film structures, Central European J. Phys. 2 (2004) 147-159.

J. Lu, J. Sundqvist, M. Ottosson, A. Tarre, A. Rosental, J. Aarik, A. Hårsta, Microstructure Characterisation of ALD-grown epitaxial SnO2 thin films, J. Crystal Growth 260 (2004) 191–204.

K. Kukli, J. Aarik, M. Ritala, T. Uustare, T. Sajavaara, J. Lu, J. Sundqvist, A. Aidla, L. Pung, A. Hårsta, M. Leskelä, Effect of selected atomic layer deposition parameters on the structure and dielectric properties of hafnium oxide films, J. Appl. Phys. 96 (2004) 5298–5307.

S. Dueñas, H. Castán, H. Garcίa, J. Barbolla, K. Kukli, J. Aarik, A. Aidla, The electrical-interface quality of as-grown atomic-layer-deposited disordered HfO2 on p- and n-type silicon, Semicond. Sci. Technol. 19 (2004) 1141–1148.

S. Dueñas, H. Castán, H. Garcίa, J. Barbolla, K. Kukli, J. Aarik, Effect of growth temperature and postmetallization annealing on the interface and dielectric quality of atomic layer deposited HfO2 on p and n silicon, J. Appl. Phys, 96 (2004) 1365–1372.

S. Lange, I. Sildos, V. Kiisk, J. Aarik, Energy transfer in the photoexcitation of Sm3+-implanted TiO2 thin films, Mater. Sci. Engineering B 112 (2004) 87–90.

V. Kiisk, I. Sildos, O. Sild, J. Aarik, The influence of a waveguiding structure on the excitonic luminescence of anatase thin films, Opt. Mater. 27 (2004) 115–118.

121. I. Sildos, V. Kiisk, S. Lange, J. Aarik, Time-resolved exciton-emission spectroscopy of anatase, Proc. SPIE 5122 (2003) 57-61.

A. Rosental, A. Tarre, A. Gerst, J. Sundqvist, A. Hårsta, A. Aidla, J. Aarik, V. Sammelselg, T. Uustare, Gas sensing properties of epitaxial SnO2 thin films prepared by atomic layer deposition, Sensors and Actuators B 93 (2003) 552–555.

J. Aarik, H. Mändar, M. Kirm, Spectroscopic characterization of ZrO2 thin films grown by atomic layer deposition, Proc. Estonian Acad. Sci. Phys. Math. 52 (2003) 289–298.

J. Sundqvist, A. Hårsta, J. Aarik, K. Kukli, A. Aidla, Atomic layer deposition of polycrystalline HfO2 films by the HfI4-O2 precursor combination, Thin Solid Films 427 (2003) 147–151.

M. Laan, J. Aarik, R. Josepson, V. Repän, Low current mode of negative coronas: mechanism of electron emission, J. Phys. D: Appl. Phys. 36 (2003) 2667–2672.

A. Tarre, A. Rosental, A. Aidla, J. Aarik, J. Sundqvist, A. Hårsta, New routes to SnO2 heteroepitaxy, Vacuum 76 (2002) 571-575.

J. Aarik, A. Aidla, H. Mändar, T. Uustare, M. Schuisky, A. Hårsta, Atomic layer growth of epitaxial TiO2 thin films from TiCl4 and H2O on -Al2O3 substrates, J. Cryst. Growth 242 (2002) 189-198.

J. Aarik, A. Aidla, H. Mändar, T. Uustare, V. Sammelselg, Growth kinetics and structure formation of ZrO2 thin films in chloride-based atomic layer deposition process, Thin Solid Films 408 (2002) 97-103.

J. Aarik, A. Aidla, T. Uustare, K. Kukli, V. Sammelselg, M. Ritala, M. Leskelä, Atomic layer deposition of TiO2 thin films from TiI4 and H2O, Appl. Surf. Sci. 193 (2002) 277-286.

J. Aarik, J. Sundqvist, A. Aidla, J. Lu, T. Sajavaara, K. Kukli, A. Hårsta, Hafnium tetraiodide and oxygen as precursors for atomic layer deposition of hafnium oxide thin films, Thin Solid Films 418 (2002) 69-72.

K. Forsgren, A. Hårsta, J. Aarik, A. Aidla, J. Westlinder, J. Olsson, Deposition of HfO2 thin films in HfI4-based processes, J. Electrochem. Soc. 149 (2002) F139-F144.

K. Kukli, M. Ritala, J. Aarik, T. Uustare, M. Leskelä, Influence of growth temperature on properties of zirconium dioxide films grown by atomic layer deposition, J. Appl. Phys. 92 (2002) 1833-1840.

K. Kukli, M. Ritala, J. Sundqvist, J. Aarik, J. Lu, T. Sajavaara, M. Leskelä, A. Hårsta, Properties of hafnium oxide films grown by atomic layer deposition from hafnium tetraiodide and oxygen, J. Appl. Phys. 92 (2002) 5698-5703.

K. Kukli, M. Ritala, T. Uustare, J. Aarik, K. Forsgren, T. Sajavaara, M. Leskelä, A. Hårsta, Influence of thickness and growth temperature on the properties of zirconium oxide films grown by atomic layer deposition on silicon, Thin Solid Films, 410 (2002) 53-60.

M. Schuisky, K. Kukli, J. Aarik, J. Lu, A. Hårsta, Epitaxial growth of TiO2 films in a hydroxyl-free ALD process, J. Cryst. Growth 235(2002) 293-299.

V. Kiisk, I. Sildos, O. Sild, J. Aarik, Spectral-spatial redistribution of self-trapped excitonic emission in thin anatase films, Proc. SPIE, 4829 (2002) 791-792.

V. Sammelselg, E. Rauhala, K. Arstila, A. Zakharov, J. Aarik, A. Kikas, J. Karlis, A. Tarre, A. Seppälä, J. Asari, I. Martinson, Study of thin oxide films by electron, ion and synchrotron radiation beams, Mikrochimica Acta 139 (2002) 165-169.

J. Aarik, A. Aidla, H. Mändar, T. Uustare, Atomic layer deposition of titanium dioxide from TiCl4 and H2O: investigation of growth mechanism, Appl. Surf. Sci. 172 (2001) 148–158.

J. Aarik, A.Aidla, H. Mändar, T. Uustare, K. Kukli, M. Schuisky, Phase transformations in hafnium dioxide thin films grown by atomic layer deposition at high temperatures, Appl. Surf. Sci. 173 (2001) 15–21.

J. Aarik, J. Karlis, H. Mändar, T. Uustare, V. Sammelselg, Influence of structure development on atomic layer deposition of TiO2 thin films, Appl. Surf. Sci., 181 (2001) 339-348.

K. Forsgren, A. Hårsta, J. Aarik, A. Aidla, Chemical deposition routes to HfO2: real-time monitoring and film growth, Electrochem. Soc. Proc. 2001-13 (2001) 152-159.

K. Kukli, J. Aarik, A. Aidla, K. Forsgren, J. Sundqvist, A. Hårsta, T. Uustare, H. Mändar, A.-A. Kiisler, Atomic layer depostion of tantalum oxide thin films from iodide precursor, Chem. Mater. 13 (2001) 122–128.

K. Kukli, K. Forsgren, J. Aarik, T. Uustare, A. Aidla, A. Niskanen, M. Ritala, M. Leskelä, A. Hårsta, Atomic layer deposition of zirconium oxide from zirconium tetraiodide, water and hydrogen peroxide, J. Crystal Growth, 231 (2001) 262-272.

K. Kukli, K. Forsgren, M. Ritala, M. Leskelä, J. Aarik, A. Hårsta, Dielectric properties of ZrO2 grown by atomic layer deposition from iodide precursor, J. Electrochem. Soc. 148 (2001) F227-F232.

M. Schuisky, J. Aarik, K. Kukli, A. Aidla, A. Hårsta, Atomic layer deposition of thin films using O2 as oxygen source, Langmuir 17 (2001) 5508-5512.

V. Kiisk, I. Sildos, A. Suisalu, J. Aarik, Spectral narrowing of self-trapped exciton emission in anatase thin films, Thin Solid Films 400 (2001) 130-131.

I. Sildos, A. Suisalu, J. Aarik, T. Sekiya, S. Kurita, Self-trapped exciton emission in crystalline anatase, J. Luminescence, 87-89 (2000) 290-292.

I. Sildos, A. Suisalu, V. Kiisk, M. Schuisky, H. Mändar, T. Uustare and J. Aarik, Effect of structure development on self-trapped exciton emission of TiO2 thin films, Proc. SPIE, 4086 (2000) 427–430.

J. Aarik, A. Aidla, H. Mändar, V. Sammelselg, Anomalous effect of temperatuure on atomic layer deposition of titanium dioxide, J. Cryst. Growth 220 (2000) 531–537.

J. Aarik, A. Aidla, H. Mändar, V. Sammelselg, T. Uustare, Texture development in nanocrystalline hafnium dioxide thin films grown by atomic layer deposition, J. Cryst. Growth 220 (2000) 105–113.

J. Aarik, A. Aidla, T. Uustare, M. Ritala, M. Leskelä, Titanium isopropoxide as a precursor for atomic layer deposition: Characterization of titanium dioxide growth process, Appl. Surf. Sci., 161 (2000) 385–395.

J. Aarik, A. Aidla, V. Sammelselg, T. Uustare, M. Ritala, M. Leskelä, Characterization of titanium dioxide atomic layer growth from titanium ethoxide and water, Thin Solid Films 370 (2000) 163-172.

K. Forsgren, J. Sundqvist, A. Hårsta, K. Kukli, J. Aarik, A. Aidla, Characterization of Ta2O5 films prepared by ALCVD, Electrochem. Soc. Proc. 2000-13 (2000) 645-651.

K. Kukli, A. Aidla, J. Aarik, M. Shuisky, A. Hårsta, M. Ritala, M. Leskelä, Real-time monitoring in atomic layer deposition of TiO2 from TiI4 and H2O–H2O2, Langmuir, 16 (2000) 8122–8128.

M. Schuisky, A. Hårsta, A. Aidla, K. Kukli, A.-A. Kiisler, J. Aarik, Atomic layer chemical vapor deposition of TiO2: low temperature epitaxy of rutile and anatase, J. Electrochem. Soc. 147 (2000) 3319–3325.

M. Schuisky, K. Kukli, A. Aidla, J. Aarik, M. Ludvigsson, A. Hårsta, Ultra thin TiO2 films deposited by atomic layer chemical vapor deposition, Electrochem. Soc. Proc. 2000-13 (2000) 638-644.

H. Asonen, J. Aarik, P. Bournes, P. Corvini, F. Fang, M. Finander, M. Hmelar, M. Jansen, R. Nabiev, J. Näppi, K. Rakennus, A. Salokatve, Aluminum-free active-area laser bars at 790–830 nm wavelengths, Proc. SPIE – Int. Soc. Opt. Eng. 3628 (1999) 11–18.

J. Aarik, A. Aidla, A.-A. Kiisler, T. Uustare, V. Sammelselg, Influence of substrate temperature on atomic layer growth and properties of HfO2 thin films, Thin Solid Films, 340 (1999) 110-116.

M. Jansen, P. Bournes, P. Corvini, F. Fang, M. Finander, M. Hmelar, T. Johnston, C. Jordan, R. Nabiev, J. Nightingale, M. Widman, H. Asonen, J. Aarik, A. Salokatve, J. Nappi, K. Rakennus, High performance laser diode bars with aluminium-free active regions, Optics Express 4 (1999) 3-11.

V. Repän, M. Laan, P. Paris, J. Aarik, V. Sammelselg, Negative coronas low current mode - pulse mode transition, Chechoslovak J. Phys., 49 (1999) 217-224.

V. Sammelselg, J. Aarik, A. Aidla, A. Kasikov, E. Heikinheimo, M. Peussa, L. Niinistö, Composition and thickness determination of thin oxide films: comparison of different programs and methods, J. Anal. At. Spectrom., 14 (1999) 523-527.

A. Suisalu, J. Aarik, H. Mändar, I. Sildos, Spectroscopic study of nanocrystalline TiO2 thin films grown by atomic layer deposition, Thin Solid Films, 336 (1998) 295–298.

J. Männik, J. Aarik, I. Sildos, A. Kasikov, A. Aidla, Spectroscopic study of thin titanium dioxide films grown by atomic layer deposition, Proc. Estonian Acad. Sci. Phys. Math. 47(1998) 56-62.

R. Ruus, A. Saar, J. Aarik, A. Aidla, T. Uustare, A. Kikas, Resonant Auger spectra of TiO2 at Ti 2p and O 1s absorption edges, J. Electron Spectroscopy, 93 (1998) 193–199.

A. Ovtcinnikov, J. Näppi, J. Aarik, S. Mohrdiek, H. Asonen, Highly efficient 808 nm range Al-free lasers by gas source MBE, Proc. SPIE - Int. Soc. Opt. Eng. (USA), Vol. 3004 (1997) 34-42.

H. Siimon, J. Aarik, Thickness profiles of thin films caused by secondary reactions in flow-type atomic layer deposition reactors, J. Phys. D: Appl. Phys., 30 (1997) 1725-1728.

H. Siimon, J. Aarik, T. Uustare, Effects of HCl readsorption on film growth in atomic layer CVD of TiO2, Chemical Vapor Deposition, Electrochem. Soc. Proc. 97-25 (1997) 131–138.

J. Aarik, A. Aidla, A.-A. Kiisler, T. Uustare, V. Sammelselg, Effect of crystal structure on optical properties of TiO2 films grown by atomic layer deposition, Thin Solid Films, 305 (1997) 270-273.

J. Aarik, A. Aidla, V. Sammelselg, T. Uustare, Effect of growth conditions on formation of TiO2-II thin films in atomic layer deposition process, J. Cryst. Growth, 181 (1997) 259-264.

K. Kukli, J. Aarik, A. Aidla, H. Siimon, M. Ritala, M. Leskelä, In situ study of atomic layer epitaxy growth of tantalum oxide thin films from Ta(OC2H5)5 and H2O, Appl. Surf. Sci., 112 (1997) 236-242.

M.Pessa, P.Savolainen, M.Toivonen, M.Jalonen, A.Salokatve, J.Aarik, A.Ovtchinnikov, K.Rakennus, R.Murison, M.Jansen, R.Nabiev, F.Fang, High-power reliable aluminium-free lasers, Conference Proceedings. LEOS '97 Annual Meeting. IEEE Lasers and Electro-Optics Society 1997 Annual Meeting, San Francisco, CA, USA, 10 - 13 Nov. 1997, IEEE, New York, NY, USA, 1997, pp. 195 - 196.

R. Ruus, A. Kikas, A. Saar, A. Ausmees, E. Nõmmiste, J. Aarik, A. Aidla, T. Uustare, I. Martinson, Ti 2p and O 1s x-ray absorption of TiO2 polymorphs, Solid State Commun., 104 (1997) 199- 203.

J. Aarik, A. Aidla, T. Uustare, Atomic layer growth of TiO2-II thin films, Phil.Mag.Lett., 73 (1996) 115-119.

J. Aarik, A. Aidla, V. Sammelselg, H.S iimon, T. Uustare, Control of thin film structure by reactant pressure in atomic layer deposition of TiO2, J. Cryst. Growth, 169 (1996) 496-502.

J. Aarik, A. Ovtchinnikov, H. Asonen, Aluminium free GaInAsP/GaAs Lasers of 808 nm wavelength range by gas sourse MBE, IPRM '96 Eighth International Conference on Indium Phosphide and Related Materials, April 21 - 25, 1996, Schwäbisch Gmünd, Germany, IEEE, New-York, NY, USA, 1996, pp. 176-179

J. Aarik, K. Kukli, A. Aidla, L. Pung, Mechanism of suboxide growth and etching in atomic layer epitaxy of tantalum oxide from TaCl5 and H2O, Appl. Surf. Sci., 103 (1996) 331-341.

K. Tappura, J. Aarik, M. Pessa, High-power GaInP-AlGaInP quantum-well lasers grown by solid source molecular beam epitaxy, IEEE Photon. Technol. Lett., 8 (1996) 319-321.

K. Tappura, J. Aarik, T. Nurmi, M. Pessa, Influence of aging on the performance of solid source molecular beam epitaxy grown GaIn/AlGaInP quantum well lasers, Appl. Phys. Lett., 68 (1996) 3383-3385.

H. Siimon, J. Aarik, Modelling of precursor flow and deposition in atomic layer deposition reactor, J. Phys. IV C5, 5 (1995) 245-252.

H. Siimon, J. Aarik, Reactivities of TaCl5 and H2O as precursors for atomic layer deposition, J. Phys. IV C5, 5 (1995) 277-282.

J. Aarik, A. Aidla, T. Uustare, V. Sammelselg, Morphology and structure of TiO2 thin films grown by atomic layer deposition, J. Cryst. Growth, 148 (1995) 268-275.

K. Kukli, J. Aarik, A. Aidla, O. Kohan, T. Uustare, V. Sammelselg, Properties of tantalum oxide thin films grown by atomic layer deposition, Thin Solid Films, 260 (1995) 135-142.

Yu. Tarantov, P. Bobrov, V. Drozd, J. Aarik, Chemical sensitivity of atomic layer epitaxy grown ultrathin oxide films, Sensor 95, Germany 1995, ACS Organizations GmbH, Wunstorf-Steinhude, Germany, 1995, pp. 673 - 677.

J. Aarik, A. Aidla, A. Jaek, M. Leskelä L. Niinistö, In situ study of a strontium -diketonate precursor for thin film growth by atomic layer epitaxy, J. Mater. Chem., 4 (1994) 1239-1244.

J. Aarik, A. Aidla, A. Jaek, M. Leskelä, L. Niinistö, Precursor properties of calcium -diketonate in vapor phase atomic layer epitaxy, Appl. Surf. Sci, 75 (1994) 33-38.

J. Aarik, A. Aidla, K. Kukli, In situ characterization of ALE- growth by reagent pulse delay times in a flow-type reactor, Appl. Surf. Sci, 75 (1994) 180-184.

J. Aarik, A. Aidla, K. Kukli, T. Uustare, Deposition and etching of tantalum oxide films in atomic layer epitaxy process, J. Cryst. Growth, 144 (1994) 116-119.

J. Aarik, H. Siimon, Characterization of adsorption in flow type atomic layer epitaxy reactor, Appl. Surface Sci., 81 (1994) 281-287.

T. Uustare, J. Aarik, M. Elango, Oxygen depletion of crystalline (anatase) TiO2 initiated by ionization of the K shell, Appl. Phys. Lett., 65 (1994) 2551-2552.

J. Aarik, A. Aidla, A. Jaek, A-A. Kiisler, A.-A. Tammik, Properties of amorphous Al2O3 films grown by ALE, Acta Polytech.Scand., 195 (1990) 201-208.

A.L. Virro, J.A. Aarik, P.A. Lõuk, J.K. Friedenthal, A study of the optical gain in AlGaAsSb/GaSb heterostructure lasers, Kvantovaya elektron., 14 (1987) 2156-2162.

A. Niilisk, J. Aarik, A. Gerst, P. Lõuk, A. Rosental, J. Friedenthal, Effect of hydrostatic pressure on emission properties of GaSb/AlGaSb DH lasers, High Pressure Science and Technology. XI AIPART International Conference, Kiev, 1987. Proceedings, Kiev, 1989, pp. 304-308.

J.A. Aarik, A.V. Gerst, A.I. Laisaar, P.A. Lõuk, A.K-I. Mugra, A.I. Niilisk, A.I. Rosental, J.K. Friedenthal, Effect of hydrostatic pressure on characteristics of Ga1-xAlxAs–Ga1-yAlyAs and GaSb–Ga1-xAlxAsySb1-y heterostructure lasers, Fiz. Tekh. Vys. Davlenii, 21 (1986) 18-22 (in Russian).

J. Aarik, Apparatus for recording watt-current characteristics for a pulsed injection laser, Instrum. Exp. Tech., 27 (1984) 998-999.

J. Aarik, A. Virro, A. Gerst, P. Lõuk, A. Niilisk, A. Rosental, V. Sammelselg, J. Friedenthal, Anomalous tuning of AlGaAsSb/GaSb AlGaSb/GaSb injection lasers by temperature and pressure, Proc. Acad. Sci. Estonian SSR. Phys. Math. 33 (1984) 35-43 (in Russian).

J. Aarik, J. Bergmann, A. Virro, P. Lõuk, A. Rosental, V. Sammelselg, J. Friedenthal, Room temperature continuous wave operation of AlGaAsSb/GaSb heterostructure lasers, Proc. Acad. Sci. Estonian SSR. Phys. Math. 33 (1984) 128-130 (in Russian).

J. Aarik, J. Bergmann, H. Kelle, P. Lõuk, V. Sammelselg, J. Friedenthal, Quantitative X-ray microanalysis of AlGaAsSb (AlGaSb) solid solutions, Proc. Acad. Sci. Estonian SSR. Phys. Math. 33 (1984) 14-34 (in Russian).

J.Aarik, J.Bergmann, L.Dolginov, L.Druzhinina, P.Lõuk, M.Milvidskii, V.Sammelselg, J.Friedenthal, K.Hansen, T.Jugova, Some aspects of the liquid-phase epitaxy of AlGaSb ja AlGaAsSb, Proc. Acad. Sci. Estonian SSR. Phys. Math. 33 (1984) 1-13 (in Russian).

J.A. Aarik, J.V. Bergmann, P.A. Lõuk, V.A. Sammelselg, A.K. Soon, J.K. Friedenthal, Investigation of the spatial distribution of defects in semiconductor heterostructures by SEM in electron beam induced current mode, Poverkhn. Fiz. Khim. Mekh. 1 (1983) 84-89 (in Russian).

J. Aarik, J. Bergmann, A. Virro, P. Lõuk, V. Sammelselg, J. Friedenthal, CW operation of AlxGa1-xSb - GaSb heterostructure lasers, Proc. Acad. Sci. Estonian SSR. Phys. - Math., 30 (1981) 395-396 (in Russian).

J.A. Aarik, L.M. Dolginov, A.E. Drakin, L.V. Druzhinina, P.G .Eliseev, P.A. Lõuk, B.N.Sverdlov, V. Skripkin, J.K. Friedenthal, Properties of injection heterostructure lasers on the base of AlGaAsSb/GaSb in the wavelength range of 1.4 - 1.8 m, Kvantovaya elektronika, 7 (1980) 91-96.

J.A. Aarik, L.M. Dolginov, L.V. Druzhinina, P.G. Eliseev, P. A. Lõuk, M.G. Milvidskij, B.N. Sverdlov, J.K. Friedenthal, Epitaxial AlGaAsSb-GaSb(AlGaSb) hetero-structures for injection lasers, Kristall und technik, 15 (1980) 1311-1316.

J.Aarik, J.Bergmann, R.Vanem, P.Lõuk, J.Friedenthal, Dependence of AlGaAsSb - GaSb DH laser characteristics on lattice matching in heterostructure, Proc. Acad. Sci. Estonian SSR. Phys. Math. 29 (1980) 217-220 (in Russian).

J. Aarik, J. Bergmann, R. Vanem, P. Lõuk, J. Friedenthal, Investigation of GaSb - AlGaAsSb heterojunctions, Proc. Acad. Sci. Estonian SSR. Phys. Math. 29 (1980) 213-216 (in Russian).

A.E. Drakin, P.G. Eliseev, V.A. Skripkin, B.N. Sverdlov, J.A. Aarik, P.A. Lõuk, J.K. Friedenthal, L.M. Dolginov, L.V. Druzhinina, M.G. Milvidskii, Epitaxial aluminium gallium antimonide heterostructure injection lasers, Radiat. Recomb. Relat. Phenom. III-V Comp. Semicond., Proc. Int. Conf., Short Contrib., 1979, p. 53-56.

Raul Rammula, MSc, 2005, superv. Väino Sammelselg, Jaan Aarik. HfO2 kilede aatokihtkasvu uurimine / Atomic layer deposition study of HfO2 thin films. Tartu Ülikool

Andres Jaek, MSc, 1994, superv. Jaan Aarik. Investigation of atomic layer growth of aluminium and indium oxide thin films / Alumiinium- ja indiumoksiidkilede aatomkihtkasvu uurimine. Tartu Ülikool

Kaupo Kukli, MSc, 1993, superv. Jaan Aarik. Investigation of atomic layer epitaxial growth of tantalum oxide thin films / Tantaaloksiidkilede aatomkihtepitaksiaalse kasvu uurimine. Tartu Ülikool

A. Niilisk, J. Aarik, T. Uustare, H. Mändar, S. Tkachev, M.H. Manghnani, A structural study of ZrO2 and HfO2 thin films grown by atomic layer deposition, Proc. SPIE - Optical Materials and Applications 5946 (2005) 98–105.

I. Jõgi, J. Aarik, K. Kukli, H. Käämbre, M. Laan, J. Lu, T. Sajavaara, T. Uustare, The effect of precursors on the structure and conductivity of atomic layer deposited TiO2 films, Electrochem. Soc. Proc. 2005-09 (2005) 575–582.

J. Aarik, A. Aidla, A. Kasikov, H. Mändar, R. Rammula, V. Sammelselg, Influence of carrier gas pressure and flow rate on atomic layer deposition of HfO2 and ZrO2 thin films, Appl. Surf. Sci. 2005 (in press).

J. Aarik, A. Kasikov, M. Kirm, S. Lange, T. Uustare, H. Mändar, Optical properties of crystalline Al2O3 thin films grown by atomic layer deposition, Proc. SPIE - Optical Materials and Applications 5946 (2005) 1–10.

J. Lu, J. Aarik, J. Sundqvist, K. Kukli, A. Hårsta, J.-O. Carlsson, Analytical TEM characterization of the interfacial layer between ALD HfO2 film and silicon substrate, J. Cryst. Growth, 273 (2005) 510–514.

K. Kukli, J. Aarik, T. Uustare, J. Lu, M. Ritala, A. Aidla, L. Pung, A. Hårsta, M. Leskelä, A. Kikas, V. Sammelselg, Engineering structure and properties of hafnium oxide films by atomic layer deposition temperature, Thin Solid Films 479 (2005) 1–11.

K. Kukli, M. Ritala, T. Pilvi, T. Aaltonen, J. Aarik, M. Lautala, M. Leskelä, Atomic layer deposition rate, phase composition and performance of HfO2 films on noble metal and alkoxylated silicon substrates, Mater. Sci. Engeneering B 118 (2005) 112–116.

K. Kukli. T. Aaltonen, J. Aarik, J. Lu, M. Ritala, S. Ferrari, A. Hårsta, M. Leskelä, Atomic layer deposition and characterization of HfO2 films on noble metal film substrates, J. Electrochem. Soc. 152(7) (2005) F75–F82.

M. Kirm, J. Aarik, M. Jürgens, I. Sildos, Thin Films of HfO2 and ZrO2 as potential scintillators, Nucl. Instrum. Meth. Phys. Res. A 537 (2005) 251–255.

S. Dueñas, H. Castán, H. Carcía, E. San Andrés, M. Toledano-Loque, I. Márttil, G. González-Díaz, K. Kukli, T. Uustare, J. Aarik, A comparative study of the electrical properties of TiO2 films grown by high-pressure reactive sputtering and atomic layer deposition, Semicond. Sci. Technol. 20(10) (2005) 1044–1051.

S. Dueñas, H. Castán, H. Garcίa, J. Barbolla, K. Kukli, J. Aarik, M. Ritala, M. Leskelä, Electrical characterization of hafnium oxide and hafnium-rich silicate films grown by atomic layer deposition, Microelectronics Reliability 45 (2005) 949–952.

S.N. Tkachev, M.H. Manghnani, A. Niilisk, J. Aarik, H. Mändar, Micro-Raman spectroscopy and X-ray diffraction studies of atomic-layer-deposited ZrO2 and HfO2 thin films, J. Mater. Sci. 40 (2005) 4293–4298.

S.N. Tkachev, M.H. Manghnani, A. Niilisk, J. Aarik, H. Mändar, Raman and Brillouin scattering spectroscopy studies of atomic-layer-deposited ZrO2 and HfO2 thin films, Spectrochimica Acta A61 (2005) 2434–2438.

V. Kiisk, I. Sildos, S. Lange, V. Reedo, T. Tätte, M. Kirm, J. Aarik, Photoluminescence characterization of pure and Sm3+-doped thin metaloxide films, Appl. Surf. Sci. 247 (2005) 412–417.

I. Jõgi, J. Aarik, V. Bichevin, H. Käämbre, M. Laan, V. Sammelselg, Fowler-Nordheim tunnelling in TiO2 films grown by atomic layer deposition on gold substrates, Proc. Estonian Acad. Sci. Phys. Math. 53 (2004) 226–236.

J. Aarik, A. Aidla, A. Kikas , T. Käämbre, R. Rammula, P. Ritslaid, T. Uustare, V. Sammelselg, Effects of precursors on nucleation in atomic layer deposition of HfO2, Appl. Surf. Sci. 230 (2004) 292–300.

J. Aarik, H. Mändar, M. Kirm, L. Pung, Optical characterization of HfO2 thin films grown by atomic layer deposition, Thin Solid Films, 466 (2004) 41–47.

J. Aarik, V. Bichevin, I. Jõgi, H. Käämbre, M. Laan, V. Sammelselg, Fowler-Nordheim tunnelling in Au-TiO2-Ag film structures, Central European J. Phys. 2 (2004) 147-159.

J. Lu, J. Sundqvist, M. Ottosson, A. Tarre, A. Rosental, J. Aarik, A. Hårsta, Microstructure Characterisation of ALD-grown epitaxial SnO2 thin films, J. Crystal Growth 260 (2004) 191–204.

K. Kukli, J. Aarik, M. Ritala, T. Uustare, T. Sajavaara, J. Lu, J. Sundqvist, A. Aidla, L. Pung, A. Hårsta, M. Leskelä, Effect of selected atomic layer deposition parameters on the structure and dielectric properties of hafnium oxide films, J. Appl. Phys. 96 (2004) 5298–5307.

S. Dueñas, H. Castán, H. Garcίa, J. Barbolla, K. Kukli, J. Aarik, A. Aidla, The electrical-interface quality of as-grown atomic-layer-deposited disordered HfO2 on p- and n-type silicon, Semicond. Sci. Technol. 19 (2004) 1141–1148.

S. Dueñas, H. Castán, H. Garcίa, J. Barbolla, K. Kukli, J. Aarik, Effect of growth temperature and postmetallization annealing on the interface and dielectric quality of atomic layer deposited HfO2 on p and n silicon, J. Appl. Phys, 96 (2004) 1365–1372.

S. Lange, I. Sildos, V. Kiisk, J. Aarik, Energy transfer in the photoexcitation of Sm3+-implanted TiO2 thin films, Mater. Sci. Engineering B 112 (2004) 87–90.

V. Kiisk, I. Sildos, O. Sild, J. Aarik, The influence of a waveguiding structure on the excitonic luminescence of anatase thin films, Opt. Mater. 27 (2004) 115–118.

121. I. Sildos, V. Kiisk, S. Lange, J. Aarik, Time-resolved exciton-emission spectroscopy of anatase, Proc. SPIE 5122 (2003) 57-61.

A. Rosental, A. Tarre, A. Gerst, J. Sundqvist, A. Hårsta, A. Aidla, J. Aarik, V. Sammelselg, T. Uustare, Gas sensing properties of epitaxial SnO2 thin films prepared by atomic layer deposition, Sensors and Actuators B 93 (2003) 552–555.

J. Aarik, H. Mändar, M. Kirm, Spectroscopic characterization of ZrO2 thin films grown by atomic layer deposition, Proc. Estonian Acad. Sci. Phys. Math. 52 (2003) 289–298.

J. Sundqvist, A. Hårsta, J. Aarik, K. Kukli, A. Aidla, Atomic layer deposition of polycrystalline HfO2 films by the HfI4-O2 precursor combination, Thin Solid Films 427 (2003) 147–151.

M. Laan, J. Aarik, R. Josepson, V. Repän, Low current mode of negative coronas: mechanism of electron emission, J. Phys. D: Appl. Phys. 36 (2003) 2667–2672.

A. Tarre, A. Rosental, A. Aidla, J. Aarik, J. Sundqvist, A. Hårsta, New routes to SnO2 heteroepitaxy, Vacuum 76 (2002) 571-575.

J. Aarik, A. Aidla, H. Mändar, T. Uustare, M. Schuisky, A. Hårsta, Atomic layer growth of epitaxial TiO2 thin films from TiCl4 and H2O on -Al2O3 substrates, J. Cryst. Growth 242 (2002) 189-198.

J. Aarik, A. Aidla, H. Mändar, T. Uustare, V. Sammelselg, Growth kinetics and structure formation of ZrO2 thin films in chloride-based atomic layer deposition process, Thin Solid Films 408 (2002) 97-103.

J. Aarik, A. Aidla, T. Uustare, K. Kukli, V. Sammelselg, M. Ritala, M. Leskelä, Atomic layer deposition of TiO2 thin films from TiI4 and H2O, Appl. Surf. Sci. 193 (2002) 277-286.

J. Aarik, J. Sundqvist, A. Aidla, J. Lu, T. Sajavaara, K. Kukli, A. Hårsta, Hafnium tetraiodide and oxygen as precursors for atomic layer deposition of hafnium oxide thin films, Thin Solid Films 418 (2002) 69-72.

K. Forsgren, A. Hårsta, J. Aarik, A. Aidla, J. Westlinder, J. Olsson, Deposition of HfO2 thin films in HfI4-based processes, J. Electrochem. Soc. 149 (2002) F139-F144.

K. Kukli, M. Ritala, J. Aarik, T. Uustare, M. Leskelä, Influence of growth temperature on properties of zirconium dioxide films grown by atomic layer deposition, J. Appl. Phys. 92 (2002) 1833-1840.

K. Kukli, M. Ritala, J. Sundqvist, J. Aarik, J. Lu, T. Sajavaara, M. Leskelä, A. Hårsta, Properties of hafnium oxide films grown by atomic layer deposition from hafnium tetraiodide and oxygen, J. Appl. Phys. 92 (2002) 5698-5703.

K. Kukli, M. Ritala, T. Uustare, J. Aarik, K. Forsgren, T. Sajavaara, M. Leskelä, A. Hårsta, Influence of thickness and growth temperature on the properties of zirconium oxide films grown by atomic layer deposition on silicon, Thin Solid Films, 410 (2002) 53-60.

M. Schuisky, K. Kukli, J. Aarik, J. Lu, A. Hårsta, Epitaxial growth of TiO2 films in a hydroxyl-free ALD process, J. Cryst. Growth 235(2002) 293-299.

V. Kiisk, I. Sildos, O. Sild, J. Aarik, Spectral-spatial redistribution of self-trapped excitonic emission in thin anatase films, Proc. SPIE, 4829 (2002) 791-792.

V. Sammelselg, E. Rauhala, K. Arstila, A. Zakharov, J. Aarik, A. Kikas, J. Karlis, A. Tarre, A. Seppälä, J. Asari, I. Martinson, Study of thin oxide films by electron, ion and synchrotron radiation beams, Mikrochimica Acta 139 (2002) 165-169.

J. Aarik, A. Aidla, H. Mändar, T. Uustare, Atomic layer deposition of titanium dioxide from TiCl4 and H2O: investigation of growth mechanism, Appl. Surf. Sci. 172 (2001) 148–158.

J. Aarik, A.Aidla, H. Mändar, T. Uustare, K. Kukli, M. Schuisky, Phase transformations in hafnium dioxide thin films grown by atomic layer deposition at high temperatures, Appl. Surf. Sci. 173 (2001) 15–21.

J. Aarik, J. Karlis, H. Mändar, T. Uustare, V. Sammelselg, Influence of structure development on atomic layer deposition of TiO2 thin films, Appl. Surf. Sci., 181 (2001) 339-348.

K. Forsgren, A. Hårsta, J. Aarik, A. Aidla, Chemical deposition routes to HfO2: real-time monitoring and film growth, Electrochem. Soc. Proc. 2001-13 (2001) 152-159.

K. Kukli, J. Aarik, A. Aidla, K. Forsgren, J. Sundqvist, A. Hårsta, T. Uustare, H. Mändar, A.-A. Kiisler, Atomic layer depostion of tantalum oxide thin films from iodide precursor, Chem. Mater. 13 (2001) 122–128.

K. Kukli, K. Forsgren, J. Aarik, T. Uustare, A. Aidla, A. Niskanen, M. Ritala, M. Leskelä, A. Hårsta, Atomic layer deposition of zirconium oxide from zirconium tetraiodide, water and hydrogen peroxide, J. Crystal Growth, 231 (2001) 262-272.

K. Kukli, K. Forsgren, M. Ritala, M. Leskelä, J. Aarik, A. Hårsta, Dielectric properties of ZrO2 grown by atomic layer deposition from iodide precursor, J. Electrochem. Soc. 148 (2001) F227-F232.

M. Schuisky, J. Aarik, K. Kukli, A. Aidla, A. Hårsta, Atomic layer deposition of thin films using O2 as oxygen source, Langmuir 17 (2001) 5508-5512.

V. Kiisk, I. Sildos, A. Suisalu, J. Aarik, Spectral narrowing of self-trapped exciton emission in anatase thin films, Thin Solid Films 400 (2001) 130-131.

I. Sildos, A. Suisalu, J. Aarik, T. Sekiya, S. Kurita, Self-trapped exciton emission in crystalline anatase, J. Luminescence, 87-89 (2000) 290-292.

I. Sildos, A. Suisalu, V. Kiisk, M. Schuisky, H. Mändar, T. Uustare and J. Aarik, Effect of structure development on self-trapped exciton emission of TiO2 thin films, Proc. SPIE, 4086 (2000) 427–430.

J. Aarik, A. Aidla, H. Mändar, V. Sammelselg, Anomalous effect of temperatuure on atomic layer deposition of titanium dioxide, J. Cryst. Growth 220 (2000) 531–537.

J. Aarik, A. Aidla, H. Mändar, V. Sammelselg, T. Uustare, Texture development in nanocrystalline hafnium dioxide thin films grown by atomic layer deposition, J. Cryst. Growth 220 (2000) 105–113.

J. Aarik, A. Aidla, T. Uustare, M. Ritala, M. Leskelä, Titanium isopropoxide as a precursor for atomic layer deposition: Characterization of titanium dioxide growth process, Appl. Surf. Sci., 161 (2000) 385–395.

J. Aarik, A. Aidla, V. Sammelselg, T. Uustare, M. Ritala, M. Leskelä, Characterization of titanium dioxide atomic layer growth from titanium ethoxide and water, Thin Solid Films 370 (2000) 163-172.

K. Forsgren, J. Sundqvist, A. Hårsta, K. Kukli, J. Aarik, A. Aidla, Characterization of Ta2O5 films prepared by ALCVD, Electrochem. Soc. Proc. 2000-13 (2000) 645-651.

K. Kukli, A. Aidla, J. Aarik, M. Shuisky, A. Hårsta, M. Ritala, M. Leskelä, Real-time monitoring in atomic layer deposition of TiO2 from TiI4 and H2O–H2O2, Langmuir, 16 (2000) 8122–8128.

M. Schuisky, A. Hårsta, A. Aidla, K. Kukli, A.-A. Kiisler, J. Aarik, Atomic layer chemical vapor deposition of TiO2: low temperature epitaxy of rutile and anatase, J. Electrochem. Soc. 147 (2000) 3319–3325.

M. Schuisky, K. Kukli, A. Aidla, J. Aarik, M. Ludvigsson, A. Hårsta, Ultra thin TiO2 films deposited by atomic layer chemical vapor deposition, Electrochem. Soc. Proc. 2000-13 (2000) 638-644.

H. Asonen, J. Aarik, P. Bournes, P. Corvini, F. Fang, M. Finander, M. Hmelar, M. Jansen, R. Nabiev, J. Näppi, K. Rakennus, A. Salokatve, Aluminum-free active-area laser bars at 790–830 nm wavelengths, Proc. SPIE – Int. Soc. Opt. Eng. 3628 (1999) 11–18.

J. Aarik, A. Aidla, A.-A. Kiisler, T. Uustare, V. Sammelselg, Influence of substrate temperature on atomic layer growth and properties of HfO2 thin films, Thin Solid Films, 340 (1999) 110-116.

M. Jansen, P. Bournes, P. Corvini, F. Fang, M. Finander, M. Hmelar, T. Johnston, C. Jordan, R. Nabiev, J. Nightingale, M. Widman, H. Asonen, J. Aarik, A. Salokatve, J. Nappi, K. Rakennus, High performance laser diode bars with aluminium-free active regions, Optics Express 4 (1999) 3-11.

V. Repän, M. Laan, P. Paris, J. Aarik, V. Sammelselg, Negative coronas low current mode - pulse mode transition, Chechoslovak J. Phys., 49 (1999) 217-224.

V. Sammelselg, J. Aarik, A. Aidla, A. Kasikov, E. Heikinheimo, M. Peussa, L. Niinistö, Composition and thickness determination of thin oxide films: comparison of different programs and methods, J. Anal. At. Spectrom., 14 (1999) 523-527.

A. Suisalu, J. Aarik, H. Mändar, I. Sildos, Spectroscopic study of nanocrystalline TiO2 thin films grown by atomic layer deposition, Thin Solid Films, 336 (1998) 295–298.

J. Männik, J. Aarik, I. Sildos, A. Kasikov, A. Aidla, Spectroscopic study of thin titanium dioxide films grown by atomic layer deposition, Proc. Estonian Acad. Sci. Phys. Math. 47(1998) 56-62.

R. Ruus, A. Saar, J. Aarik, A. Aidla, T. Uustare, A. Kikas, Resonant Auger spectra of TiO2 at Ti 2p and O 1s absorption edges, J. Electron Spectroscopy, 93 (1998) 193–199.

A. Ovtcinnikov, J. Näppi, J. Aarik, S. Mohrdiek, H. Asonen, Highly efficient 808 nm range Al-free lasers by gas source MBE, Proc. SPIE - Int. Soc. Opt. Eng. (USA), Vol. 3004 (1997) 34-42.

H. Siimon, J. Aarik, Thickness profiles of thin films caused by secondary reactions in flow-type atomic layer deposition reactors, J. Phys. D: Appl. Phys., 30 (1997) 1725-1728.

H. Siimon, J. Aarik, T. Uustare, Effects of HCl readsorption on film growth in atomic layer CVD of TiO2, Chemical Vapor Deposition, Electrochem. Soc. Proc. 97-25 (1997) 131–138.

J. Aarik, A. Aidla, A.-A. Kiisler, T. Uustare, V. Sammelselg, Effect of crystal structure on optical properties of TiO2 films grown by atomic layer deposition, Thin Solid Films, 305 (1997) 270-273.

J. Aarik, A. Aidla, V. Sammelselg, T. Uustare, Effect of growth conditions on formation of TiO2-II thin films in atomic layer deposition process, J. Cryst. Growth, 181 (1997) 259-264.

K. Kukli, J. Aarik, A. Aidla, H. Siimon, M. Ritala, M. Leskelä, In situ study of atomic layer epitaxy growth of tantalum oxide thin films from Ta(OC2H5)5 and H2O, Appl. Surf. Sci., 112 (1997) 236-242.

M.Pessa, P.Savolainen, M.Toivonen, M.Jalonen, A.Salokatve, J.Aarik, A.Ovtchinnikov, K.Rakennus, R.Murison, M.Jansen, R.Nabiev, F.Fang, High-power reliable aluminium-free lasers, Conference Proceedings. LEOS '97 Annual Meeting. IEEE Lasers and Electro-Optics Society 1997 Annual Meeting, San Francisco, CA, USA, 10 - 13 Nov. 1997, IEEE, New York, NY, USA, 1997, pp. 195 - 196.

R. Ruus, A. Kikas, A. Saar, A. Ausmees, E. Nõmmiste, J. Aarik, A. Aidla, T. Uustare, I. Martinson, Ti 2p and O 1s x-ray absorption of TiO2 polymorphs, Solid State Commun., 104 (1997) 199- 203.

J. Aarik, A. Aidla, T. Uustare, Atomic layer growth of TiO2-II thin films, Phil.Mag.Lett., 73 (1996) 115-119.

J. Aarik, A. Aidla, V. Sammelselg, H.S iimon, T. Uustare, Control of thin film structure by reactant pressure in atomic layer deposition of TiO2, J. Cryst. Growth, 169 (1996) 496-502.

J. Aarik, A. Ovtchinnikov, H. Asonen, Aluminium free GaInAsP/GaAs Lasers of 808 nm wavelength range by gas sourse MBE, IPRM '96 Eighth International Conference on Indium Phosphide and Related Materials, April 21 - 25, 1996, Schwäbisch Gmünd, Germany, IEEE, New-York, NY, USA, 1996, pp. 176-179

J. Aarik, K. Kukli, A. Aidla, L. Pung, Mechanism of suboxide growth and etching in atomic layer epitaxy of tantalum oxide from TaCl5 and H2O, Appl. Surf. Sci., 103 (1996) 331-341.

K. Tappura, J. Aarik, M. Pessa, High-power GaInP-AlGaInP quantum-well lasers grown by solid source molecular beam epitaxy, IEEE Photon. Technol. Lett., 8 (1996) 319-321.

K. Tappura, J. Aarik, T. Nurmi, M. Pessa, Influence of aging on the performance of solid source molecular beam epitaxy grown GaIn/AlGaInP quantum well lasers, Appl. Phys. Lett., 68 (1996) 3383-3385.

H. Siimon, J. Aarik, Modelling of precursor flow and deposition in atomic layer deposition reactor, J. Phys. IV C5, 5 (1995) 245-252.

H. Siimon, J. Aarik, Reactivities of TaCl5 and H2O as precursors for atomic layer deposition, J. Phys. IV C5, 5 (1995) 277-282.

J. Aarik, A. Aidla, T. Uustare, V. Sammelselg, Morphology and structure of TiO2 thin films grown by atomic layer deposition, J. Cryst. Growth, 148 (1995) 268-275.

K. Kukli, J. Aarik, A. Aidla, O. Kohan, T. Uustare, V. Sammelselg, Properties of tantalum oxide thin films grown by atomic layer deposition, Thin Solid Films, 260 (1995) 135-142.

Yu. Tarantov, P. Bobrov, V. Drozd, J. Aarik, Chemical sensitivity of atomic layer epitaxy grown ultrathin oxide films, Sensor 95, Germany 1995, ACS Organizations GmbH, Wunstorf-Steinhude, Germany, 1995, pp. 673 - 677.

J. Aarik, A. Aidla, A. Jaek, M. Leskelä L. Niinistö, In situ study of a strontium -diketonate precursor for thin film growth by atomic layer epitaxy, J. Mater. Chem., 4 (1994) 1239-1244.

J. Aarik, A. Aidla, A. Jaek, M. Leskelä, L. Niinistö, Precursor properties of calcium -diketonate in vapor phase atomic layer epitaxy, Appl. Surf. Sci, 75 (1994) 33-38.

J. Aarik, A. Aidla, K. Kukli, In situ characterization of ALE- growth by reagent pulse delay times in a flow-type reactor, Appl. Surf. Sci, 75 (1994) 180-184.

J. Aarik, A. Aidla, K. Kukli, T. Uustare, Deposition and etching of tantalum oxide films in atomic layer epitaxy process, J. Cryst. Growth, 144 (1994) 116-119.

J. Aarik, H. Siimon, Characterization of adsorption in flow type atomic layer epitaxy reactor, Appl. Surface Sci., 81 (1994) 281-287.

T. Uustare, J. Aarik, M. Elango, Oxygen depletion of crystalline (anatase) TiO2 initiated by ionization of the K shell, Appl. Phys. Lett., 65 (1994) 2551-2552.

J. Aarik, A. Aidla, A. Jaek, A-A. Kiisler, A.-A. Tammik, Properties of amorphous Al2O3 films grown by ALE, Acta Polytech.Scand., 195 (1990) 201-208.

A.L. Virro, J.A. Aarik, P.A. Lõuk, J.K. Friedenthal, A study of the optical gain in AlGaAsSb/GaSb heterostructure lasers, Kvantovaya elektron., 14 (1987) 2156-2162.

A. Niilisk, J. Aarik, A. Gerst, P. Lõuk, A. Rosental, J. Friedenthal, Effect of hydrostatic pressure on emission properties of GaSb/AlGaSb DH lasers, High Pressure Science and Technology. XI AIPART International Conference, Kiev, 1987. Proceedings, Kiev, 1989, pp. 304-308.

J.A. Aarik, A.V. Gerst, A.I. Laisaar, P.A. Lõuk, A.K-I. Mugra, A.I. Niilisk, A.I. Rosental, J.K. Friedenthal, Effect of hydrostatic pressure on characteristics of Ga1-xAlxAs–Ga1-yAlyAs and GaSb–Ga1-xAlxAsySb1-y heterostructure lasers, Fiz. Tekh. Vys. Davlenii, 21 (1986) 18-22 (in Russian).

J. Aarik, Apparatus for recording watt-current characteristics for a pulsed injection laser, Instrum. Exp. Tech., 27 (1984) 998-999.

J. Aarik, A. Virro, A. Gerst, P. Lõuk, A. Niilisk, A. Rosental, V. Sammelselg, J. Friedenthal, Anomalous tuning of AlGaAsSb/GaSb AlGaSb/GaSb injection lasers by temperature and pressure, Proc. Acad. Sci. Estonian SSR. Phys. Math. 33 (1984) 35-43 (in Russian).

J. Aarik, J. Bergmann, A. Virro, P. Lõuk, A. Rosental, V. Sammelselg, J. Friedenthal, Room temperature continuous wave operation of AlGaAsSb/GaSb heterostructure lasers, Proc. Acad. Sci. Estonian SSR. Phys. Math. 33 (1984) 128-130 (in Russian).

J. Aarik, J. Bergmann, H. Kelle, P. Lõuk, V. Sammelselg, J. Friedenthal, Quantitative X-ray microanalysis of AlGaAsSb (AlGaSb) solid solutions, Proc. Acad. Sci. Estonian SSR. Phys. Math. 33 (1984) 14-34 (in Russian).

J.Aarik, J.Bergmann, L.Dolginov, L.Druzhinina, P.Lõuk, M.Milvidskii, V.Sammelselg, J.Friedenthal, K.Hansen, T.Jugova, Some aspects of the liquid-phase epitaxy of AlGaSb ja AlGaAsSb, Proc. Acad. Sci. Estonian SSR. Phys. Math. 33 (1984) 1-13 (in Russian).

J.A. Aarik, J.V. Bergmann, P.A. Lõuk, V.A. Sammelselg, A.K. Soon, J.K. Friedenthal, Investigation of the spatial distribution of defects in semiconductor heterostructures by SEM in electron beam induced current mode, Poverkhn. Fiz. Khim. Mekh. 1 (1983) 84-89 (in Russian).

J. Aarik, J. Bergmann, A. Virro, P. Lõuk, V. Sammelselg, J. Friedenthal, CW operation of AlxGa1-xSb - GaSb heterostructure lasers, Proc. Acad. Sci. Estonian SSR. Phys. - Math., 30 (1981) 395-396 (in Russian).

J.A. Aarik, L.M. Dolginov, A.E. Drakin, L.V. Druzhinina, P.G .Eliseev, P.A. Lõuk, B.N.Sverdlov, V. Skripkin, J.K. Friedenthal, Properties of injection heterostructure lasers on the base of AlGaAsSb/GaSb in the wavelength range of 1.4 - 1.8 m, Kvantovaya elektronika, 7 (1980) 91-96.

J.A. Aarik, L.M. Dolginov, L.V. Druzhinina, P.G. Eliseev, P. A. Lõuk, M.G. Milvidskij, B.N. Sverdlov, J.K. Friedenthal, Epitaxial AlGaAsSb-GaSb(AlGaSb) hetero-structures for injection lasers, Kristall und technik, 15 (1980) 1311-1316.

J.Aarik, J.Bergmann, R.Vanem, P.Lõuk, J.Friedenthal, Dependence of AlGaAsSb - GaSb DH laser characteristics on lattice matching in heterostructure, Proc. Acad. Sci. Estonian SSR. Phys. Math. 29 (1980) 217-220 (in Russian).

J. Aarik, J. Bergmann, R. Vanem, P. Lõuk, J. Friedenthal, Investigation of GaSb - AlGaAsSb heterojunctions, Proc. Acad. Sci. Estonian SSR. Phys. Math. 29 (1980) 213-216 (in Russian).

A.E. Drakin, P.G. Eliseev, V.A. Skripkin, B.N. Sverdlov, J.A. Aarik, P.A. Lõuk, J.K. Friedenthal, L.M. Dolginov, L.V. Druzhinina, M.G. Milvidskii, Epitaxial aluminium gallium antimonide heterostructure injection lasers, Radiat. Recomb. Relat. Phenom. III-V Comp. Semicond., Proc. Int. Conf., Short Contrib., 1979, p. 53-56.