| title: | Development of anisotropic electrical and thermoelectric parameter models and device simulators for novel wide band gap semiconductors SiC and GaN |
|---|---|
| reg no: | ETF5911 |
| project type: | Estonian Science Foundation research grant |
| subject: |
2.12. Electrical Engineering |
| status: | accepted |
| institution: | TTU Faculty of Information Technology |
| head of project: | Andres Udal |
| duration: | 01.01.2004 - 31.12.2006 |
| description: | General goals: 1. Development of electrical, thermoelectrical and thermal material parameter models for perspective wide band gap semiconductors as SiC, GaN, C (diamond) etc. 2. Supporting of cooperation with Stockholm and Vilnius research groups and other partners of European 6th Framework Programme Network of Excellence SICWISE. 3. Confirming of doctoral and master research high standard. 4. Further development of one- and two-dimensional nonisothermal device simulators DYNAMIT-1DT,2DT to be applied as the basic tools for new perspective device research, device design and student training. More detailed task description: 1. Development of sophisticated material parameter models and generalized device simulator versions for GaN on the basis of knowhow, obtained from earlier SiC and GaAs studies. 2. Generalization and development of theoretical models of phonon drag effect, Seebeck coefficient, heat conductivity, carrier mobilities and other material parameters, taking into account material anisotropy, crystal lattice nonideality and impurities. 3. Study of possible high thermoelectric efficiency of SiC (and other high heat conductivity materials) at low temperatures due to the phonon drag effect. 4. Development of GaN simulator including the recombination radiation reabsorption phenomenon (carrier radiation transport). Study of the influence of that effect in the case of realistic devices. 5. Successful completing of postgraduate studies (Ph.D. thesis of M.Milatškov on the phonon drag Seebeck coefficient models and M.S. theses of I.Verbitski and A.Kuusk on GaN photon recycling and ab initio material simulations). |
| project group | ||||
|---|---|---|---|---|
| no | name | institution | position | |
| 1. | Mihhail Klopov | Tallinn Technical University | dotsent | |
| 2. | Andres Udal | TTU Faculty of Information Technology | senior researcher | |
| 3. | Enn Velmre | Tallinn Technical University | professor | |