| title: | Investigation of the Structure Defects of Metal-SiC Contact Layer |
|---|---|
| reg no: | ETF5917 |
| project type: | Estonian Science Foundation research grant |
| subject: |
2.2. Materials Science 2.9. System Engineering and Computer Technology |
| status: | accepted |
| institution: | TTU Faculty of Chemistry and Materials Technology |
| head of project: | Mart Viljus |
| duration: | 01.01.2004 - 31.12.2006 |
| description: | The main goal of the project is improvement of the properties of the contacts with Shottky diode. Sputtering of the metal to the surface of the semiconductor is the most traditional way to make such contacts. The very small thickness of the metal layer (in the order of nanometres) acts as a limiting factor to the electrical current because of impedance. One solution is to replace the metal sputtering technique with metal-semiconductor difusion welding. This method enables much higher electrical currents, but has indeed some drawbacks, mainly because of structural defects in the difusion area (contact layer). The subject of the project is investigation of these structural defects by the means of various methods (TEM, AFM, STM). The presumed result of the project includes optimisation of the diffusion welding techniqe in order to decrease the structural defects. |
| project group | ||||
|---|---|---|---|---|
| no | name | institution | position | |
| 1. | Oleg Korolkov | Tallinna Tehnikaülikool | teadur | |
| 2. | Natalja Kuznetsova | Tallinna Tehnikaülikool | ||
| 3. | Koit Mauring | Tartu Ülikool | vanemteadur | |
| 4. | Reet Nisumaa | Tallinna Tehnikaülikool | teadur | |
| 5. | Kaido Reivelt | Tartu Ülikool | erakorraline teadur | |
| 6. | Mart Viljus | TTU Faculty of Chemistry and Materials Technology | senior research worker | |