| title: | Wide bandgap semiconductors based Schottky interfaces: transport models for charge carriers and electro physical phenomena influencing the parameters of the transport models |
|---|---|
| reg no: | ETF5901 |
| project type: | Estonian Science Foundation research grant |
| subject: |
2.12. Electrical Engineering |
| status: | accepted |
| institution: | TTU Faculty of Information Technology |
| head of project: | Toomas Rang |
| duration: | 01.01.2004 - 31.12.2006 |
| description: | The scientific aim of the project is to develop a theoretical model for the transport of charge carriers in Schottky interfaces based on wide bandgap semiconductor materials. With the help of new improved model(s), which will take into account the injection of both type of charge carriers and the influence of traps and technological dislocation inside the interface region, the modified Richardson' coefficient and the total current models will be developed taking into account the controlled depletion region boundaries (shape function). The investigations will give detailed information about the behavior of drift-diffusion, tunneling and leakage current components of total current, taking into account the influence of inhomogeneities at the Schottky interface boundaries and the anisotropy of the material as well. The influence of ambient conditions on Richardson's coefficient and interface defects will be investigated. First, the outcome is essentially exact and substantially correct model for transport of charge carriers in Schottky interfaces based on wide bandgap semiconductor materials, and secondly the algorithms for determination of model parameters. The hypothesis of this work is that with the help of proper definition of shape function, which depends on number and type of defects (included technological), influenced additionally by inhomogeneities at the interface, and ambient conditions we can create a possibility to increase the exactness of the model of total current (i.e. the current differences on boundaries of interface will be suppressed). Concrete research tasks will be the development of the general transport model taking into account both diffusion-drift and tunneling components adding also the possible leakage current as well, the investigation of the influence of technological dislocations and traps in MS (Metal-Semiconductor) interface on Schottky type, tunneling and leakage current approximation and on boundary conditions of interface area, estimation of shape function, the influence of impurity atoms and mobility of charge carriers on on-state resistivity of Schottky junctions, estimation of the influence of tunneling current on junction breakdown, determination of breakdown integral, estimation of the influence of the leakage current caused by the barrier height inhomogeneities on current distribution through at the interface and the application of the general transport model for investigation of new type of Schottky structures like JBS (Junction Schottky Barrier Diode) or LDSS (Lateral Dual Sidewall Schottky Diode), etc. |
| project group | ||||
|---|---|---|---|---|
| no | name | institution | position | |
| 1. | Oleg Korolkov | Tallinn Technical University | teadur | |
| 2. | Raido Kurel | Tallinn Technical University | assistent | |
| 3. | Mihhail Pikkov | Tallinn Technical University | vanemteadur | |
| 4. | Toomas Rang | TTU Faculty of Information Technology | Professor | |